SEMICONDUCTOR KTA511T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES 1 ᴌExcellent hFE Linearity DIM MILLIMETERS _ 0.2 A 2.9 + 5 B G : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. F 4 3 CHARACTERISTIC C SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Power Dissipation Junction Temperature Storage Temperature Range I MAXIMUM RATING (Ta=25ᴱ) L D G A ᴌComplementary to KTC611T. 1.6+0.2/-0.1 _ 0.05 0.70 + C 2 J D _ 0.1 0.4 + E F G H I J K L 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H J 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR TSV EQUIVALENT CIRCUIT(TOP VIEW) * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) 5 4 Q2 Q1 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 Ọ A hFE(1) (Note) VCE=-1V, IC=-100mA 70 - 240 hFE(2) (Note) VCE=-6V, IC=-400mA 25 - - VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - -0.8 -1.0 V Transition Frequency fT VCE=-6V, IC=-20mA - 200 - MHz VCB=-6V, IE=0, f=1MHz - 13 - pF DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70ᴕ140, 0:25Min., Y:120ᴕ240 Y:40Min. Marking h FE Rank Type Name 5 Revision No : 1 Lot No. S 1 2002. 1. 24 4 2 3 1/2 KTA511T h FE - I C I C - VCE -5 -4 -400 -3 -300 -2 -200 I B =-1mA -100 0 0 -1 -3 -2 -4 300 Ta=25 C 100 Ta=-25 C VCE =-1V 50 30 10 -0.3 -5 VCE =-6V Ta=100 C -1 -3 -10 -3k COMMON EMITTER I C /I B =10 -1k COMMON -1k -0.1 Ta=100 C Ta=25 C Ta=-25 C EMITTER VCE =-6V C -300 -100 Ta=1 00 -0.5 -0.3 -0.05 -0.03 -300 I B - VBE BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C -1 -100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -3 -30 -30 5 C 25 C 0 COMMON EMITTER 500 Ta=- -6 Ta=2 -8 -7 -500 1k COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -600 -10 -3 -1 -0.3 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.2 MOUNTED ON A CERAMIC BOARD 1.0 (600mm 2 `0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 1. 24 Revision No : 1 2/2