KEC KTA2013F

SEMICONDUCTOR
KTA2013F
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
E
・Excellent hFE Linearity
B
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
・High hFE : hFE=120~400.
D
3
K
・Thin Fine Pitch Small Package.
2
G
A
・Complementary to KTC4074F.
1
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Base Current
IB
-30
mA
Collector Power Dissipation
PC
50
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
J
CHARACTERISTIC
MILLIMETERS
_ 0.05
0.6 +
_ 0.05
0.8 +
0.38+0.02/-0.04
_ 0.05
0.2 +
_ 0.05
1.0 +
_ 0.05
0.35+
_ 0.05
0.1 +
_ 0.05
0.15 +
C
MAXIMUM RATING (Ta=25℃)
DIM
A
B
C
D
E
G
J
K
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
Type Name
F
h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-20V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μA
120
-
400
-
-0.1
-0.3
V
80
-
-
MHz
-
4
7
pF
hFE (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
fT
Transition Frequency
Cob
Collector Output Capacitance
VCE=-5V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
Note : hFE Classification Y(4):120~240, GR(6):200~400
2005. 4. 21
Revision No : 1
1/3
KTA2013F
I C - VCE
-200
3k
COMMON EMITTER
Ta=25 C
I B =-2.0mA
COMMON EMITTER
DC CURRENT GAIN h FE
I B =-1.5mA
-160
I B =-1.0mA
-120
I B =-0.5mA
-80
I B =-0.2mA
-40
0
-1
-2
-3
-4
500
Ta=25 C
Ta=-25 C
100
VCE =-1V
-5
-6
30
-0.1
-7
COLLECTOR-EMITTER VOLTAGE V CE (V)
-0.3
-1
-10
-1
COMMON EMITTER
I C /I B =10
-0.5
-0.3
-0.1
00
=1
Ta
-0.05
C
Ta=25 C
Ta=-25 C
-0.03
-0.3
-1
-3
-10
-30
-100
-3
-0.3
-0.3
-1
-3
-10
-30
-100
-300
Revision No : 1
-300
COMMON EMITTER
VCE =-5V
-300
-100
-30
Ta=1
00 C
BASE CURRENT IB (µA)
TRANSITION FREQUENCY f T (MHz)
COLLECTOR CURRENT I C (mA)
2005. 4. 21
-100
-1k
50
30
-3
-30
I B - V BE
100
-1
-10
COLLECTOR CURRENT I C (mA)
500
300
-0.3
-300
-0.5
-0.1
-0.1
-300
COMMON EMITTER
VCE =-10V
Ta=25 C
1k
-100
-1
fT - IC
3k
-30
COMMON EMITTER
I C/I B=10
Ta=25 C
-5
COLLECTOR CURRENT I C (mA)
10
-0.1
-10
VBE(sat) - I C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-3
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
-0.01
-0.1
VCE =-5V
Ta=100 C
300
50
I B =0mA
0
1k
-10
Ta=2
5 C
Ta=-2
5 C
COLLECTOR CURRENT I C (mA)
-240
h FE - I C
-3
-1
-0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE VBE (V)
2/3
COLLECTOR POWER DISSIPATION PC (mW)
KTA2013F
Pc - Ta
100
75
50
25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2005. 4. 21
Revision No : 1
3/3