SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package. 2 G A ・Complementary to KTC4074F. 1 SYMBOL RATING UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -30 mA Collector Power Dissipation PC 50 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range J CHARACTERISTIC MILLIMETERS _ 0.05 0.6 + _ 0.05 0.8 + 0.38+0.02/-0.04 _ 0.05 0.2 + _ 0.05 1.0 + _ 0.05 0.35+ _ 0.05 0.1 + _ 0.05 0.15 + C MAXIMUM RATING (Ta=25℃) DIM A B C D E G J K 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name F h FE Rank ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA 120 - 400 - -0.1 -0.3 V 80 - - MHz - 4 7 pF hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Cob Collector Output Capacitance VCE=-5V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz Note : hFE Classification Y(4):120～240, GR(6):200～400 2005. 4. 21 Revision No : 1 1/3 KTA2013F I C - VCE -200 3k COMMON EMITTER Ta=25 C I B =-2.0mA COMMON EMITTER DC CURRENT GAIN h FE I B =-1.5mA -160 I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 0 -1 -2 -3 -4 500 Ta=25 C Ta=-25 C 100 VCE =-1V -5 -6 30 -0.1 -7 COLLECTOR-EMITTER VOLTAGE V CE (V) -0.3 -1 -10 -1 COMMON EMITTER I C /I B =10 -0.5 -0.3 -0.1 00 =1 Ta -0.05 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -0.3 -0.3 -1 -3 -10 -30 -100 -300 Revision No : 1 -300 COMMON EMITTER VCE =-5V -300 -100 -30 Ta=1 00 C BASE CURRENT IB (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 2005. 4. 21 -100 -1k 50 30 -3 -30 I B - V BE 100 -1 -10 COLLECTOR CURRENT I C (mA) 500 300 -0.3 -300 -0.5 -0.1 -0.1 -300 COMMON EMITTER VCE =-10V Ta=25 C 1k -100 -1 fT - IC 3k -30 COMMON EMITTER I C/I B=10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 10 -0.1 -10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -0.01 -0.1 VCE =-5V Ta=100 C 300 50 I B =0mA 0 1k -10 Ta=2 5 C Ta=-2 5 C COLLECTOR CURRENT I C (mA) -240 h FE - I C -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 COLLECTOR POWER DISSIPATION PC (mW) KTA2013F Pc - Ta 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2005. 4. 21 Revision No : 1 3/3