SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor. A1 B B1 C D D The follwing characteristics are common for Q1, Q2. 3 4 MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0.2 + _ 0.05 0.5 + H P SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA PC * 200 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range J CHARACTERISTIC ) H MAXIMUM RATING (Ta=25 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 * Total Rating 4 Q1 Q2 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC _ 0.05 0.12 + 5 J P P 2 3 ) SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 hFE (Note) VCE=6V, IC=2 120 - 400 DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency VCE(sat) IC=100 , IB=10 - 0.1 0.25 fT VCE=10V, IC=1 80 - - - 2 3.5 - 1.0 10 Collector Output Capacitance Cob VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 Note : hFE Classification Y(4):120 240, GR(6):200 400 , Rg=10 Marking 4 L 1 Revision No : 2 V Type Name 5 2003. 2. 25 UNIT. hFE Rank 2 3 1/3 KTC601E h FE - I C I C - VCE 2.0mA 160 1.0mA 120 0.5mA 80 I B =0.2mA 40 0 0 0 1 2 3 4 5 6 500 300 100 50 30 VCE =1V 10 0.1 7 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.3 1 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 0.3 0.1 C Ta=25 C Ta=-25 C 0.03 0.01 0.1 0 10 = Ta 0.05 0.3 1 3 10 30 100 3 0.5 0.3 0.1 300 0.1 0.3 1 3 3k 100 300 50 30 300 100 00 C 100 COMMON EMITTER VCE =6V 1k 30 Ta=1 COMMON EMITTER VCE =10V Ta=25 C BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) 30 I B - V BE 10 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 2003. 2. 25 10 COLLECTOR CURRENT IC (mA) 500 300 10 300 1 fT - IC 1k 100 COMMON EMITTER I C /I B=10 Ta=25 C 5 COLLECTOR CURRENT I C (mA) 3k 30 VBE(sat) - I C COMMON EMITTER I C /I B=10 0.5 10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 1 VCE =6V Ta=100 C Ta=25 C Ta=-25 C 5 C Ta=25 C 3.0mA COMMON EMITTER Ta=2 200 1k COMMON EMITTER Ta=25 C 6.0mA 5.0mA DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 240 Revision No : 2 300 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 COLLECTOR POWER DISSIPATION PC (mW) KTC601E Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 2. 25 Revision No : 2 3/3