SEMICONDUCTOR KTA701U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. DIM A A1 B 1 6 2 5 3 4 A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor. The follwing characteristics are common for Q1, Q2. D MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + B1 C 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 H D G MAXIMUM RATING (Ta=25 CHARACTERISTIC T ) G SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -30 mA PC * 200 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR US6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 * Total Rating Q1 Q2 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 2 3 ) SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 hFE (Note) VCE=-6V, IC=-2 120 - 400 - -0.1 -0.30 80 - - - 4 7 - 1.0 10 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency IC=-100 , IB=-10 VCE=-10V, IC=-1 Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 Note : hFE Classification Y(4):120 240, GR(6):200 400 , f=1 , Rg=10 Marking 5 4 S 1 Revision No : 2 V Type Name 6 2003. 2. 25 UNIT. hFE Rank 2 3 1/3 KTA701U -200 3k COMMON EMITTER Ta=25 C I B =-2.0mA I B =-1.5mA -160 I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 0 -1 -2 -3 -4 1k 500 Ta=25 C Ta=-25 C 100 VCE =-1V -5 -6 30 -0.1 -7 COLLECTOR-EMITTER VOLTAGE V CE (V) -0.3 -1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 -0.3 -0.1 00 =1 Ta -0.05 -0.01 -0.1 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -0.3 -0.3 -1 -3 -10 -30 -100 -100 -300 Revision No : 2 -300 COMMON EMITTER VCE =-6V -300 -100 00 C -30 Ta=1 BASE CURRENT IB (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 2003. 2. 25 -1k 50 30 -3 -30 I B - V BE 100 -1 -10 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-10V Ta=25 C -0.3 -300 -0.5 -0.1 -0.1 -300 500 300 10 -0.1 -100 -1 fT - IC 1k -30 COMMON EMITTER I C/I B=10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 3k -10 VBE(sat) - I C COMMON EMITTER I C /I B =10 -0.5 -3 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -1 VCE =-6V Ta=100 C 300 50 I B =0mA 0 COMMON EMITTER -10 Ta=2 5 C Ta=-2 5 C -240 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 COLLECTOR POWER DISSIPATION PC (mW) KTA701U Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 2. 25 Revision No : 2 3/3