LRC MSC2295-BT1

LESHAN RADIO COMPANY, LTD.
NPN RF Amplifier Transistors
Surface Mount
MSC2295-BT1
MSC2295-CT1
COLLECTOR
3
3
2
2
BASE
1
EMITTER
1
CASE
318D–03, STYLE1
SC–59
MAXIMUM RATINGS (T A = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
30
20
5.0
30
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
TJ
T stg
Max
200
150
-55 ~ +150
Unit
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Base Cutoff Current
(V CB = 10 Vdc, I E = 0)
DC Current Gain (1)
(V CB = 10 Vdc, I C = –1.0 mAdc)
Symbol
I CBO
Min
—
Max
0.1
fT
70
110
150
140
220
—
MHz
C re
—
1.5
pF
h FE
MSC2295-BT1
MSC2295-CT1
Collector-Gain - Bandwidth Product
(V CB = 10 Vdc, I E = –1.0 mAdc)
Reverse Transistor Capacitance
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)
Unit
µAdc
—
1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.
DEVICE MARKING
Marking Symbol
VBX
VCX
MSC2295-BT1
MSC2295-CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N4–1/1