LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR 3 3 2 2 BASE 1 EMITTER 1 CASE 318D–03, STYLE1 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc Symbol PD TJ T stg Max 200 150 -55 ~ +150 Unit mW °C °C THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Base Cutoff Current (V CB = 10 Vdc, I E = 0) DC Current Gain (1) (V CB = 10 Vdc, I C = –1.0 mAdc) Symbol I CBO Min — Max 0.1 fT 70 110 150 140 220 — MHz C re — 1.5 pF h FE MSC2295-BT1 MSC2295-CT1 Collector-Gain - Bandwidth Product (V CB = 10 Vdc, I E = –1.0 mAdc) Reverse Transistor Capacitance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz) Unit µAdc — 1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%. DEVICE MARKING Marking Symbol VBX VCX MSC2295-BT1 MSC2295-CT1 The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N4–1/1