LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. 3 1 BASE 1 2 2 EMITTER CASE 419–02, STYLE 3 SOT–323 /SC – 70 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 75 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 600 mAdc Collector Current — Continuous IC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW RθJA TJ , Tstg 833 –55 to +150 °C/W °C Total Device Dissipation FR– 5 Board, TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT2222AWT1G = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 40 — Vdc V (BR)CBO 75 — Vdc V 6.0 — Vdc I BL — 20 nAdc I CEX — 10 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE (BR)EBO EB 1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%. 1/3 LESHAN RADIO COMPANY, LTD. LMBT2222AWT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 35 50 75 100 40 –– –– –– — –– –– –– 0.3 1.0 0.6 –– 1.2 2.0 fT 300 –– MHz C obo –– 8.0 pF C ibo –– 30 pF h ie 0.25 1.25 kΩ h re –– 4.0 X 10 h fe 75 375 — h oe 25 200 µmhos NF –– 4.0 dB ON CHARACTERISTICS (1) DC Current Gain (1) (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) Collector–Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE –– VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz) Output Capacitance (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Noise Figure (V CE= 10 Vdc, I C = 100 µAdc, R S= 1.0 kΩ, f = 1.0 kHz) –4 SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE= – 0.5 Vdc td — 10 Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr — 25 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts — 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf — 60 1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. Ordering Information Device Marking Shipping LMBT2222AWT1G 1P 3000/Tape&Reel LMBT2222AWT3G 1P 10000/Tape&Reel 2/3. LESHAN RADIO COMPANY, LTD. LMBT2222AWT1G SC−70 (SOT−323) D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches 3/3