LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. 3 1 2 Features • • • • SC-70/SOT–323 High hFE, 210−460 Low VCE(sat), < 0.5 V Moisture Sensitivity Level 1 ESD Protection: Human Body Model > 4000 V Machine Model > 400 V • We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 1 BASE MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit PD 150 mW Rating Collector Current − Continuous Collector Current − Peak 2 EMITTER THERMAL CHARACTERISTICS Characteristic Power Dissipation (Note 1) Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Ordering Information Device Marking Shipping LMSD1819A-RT1G ZR 3000/Tape&Reel LMSD1819A-RT1G ZR 10000/Tape&Reel 1/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 − Vdc Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − 0.1 mA Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO − 0.1 mA DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) hFE1 hFE2 210 90 340 − VCE(sat) − 0.5 − Collector-Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) Vdc 250 60 IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (MILLIWATTS) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 140 mA 120 mA 40 100 mA 30 80 mA 60 mA 20 40 mA 10 0 150 160 mA TA = 25°C 50 IB = 20 mA 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) Figure 2. IC − VCE 1000 DC CURRENT GAIN TA = 75°C TA = 25°C TA = − 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE = 10 V VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Derating Curve 8 2 TA = 25°C 1.5 1 0.5 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 Figure 4. Collector Saturation Region 2/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G 900 20 Cib, INPUT CAPACITANCE (pF) 700 600 500 400 TA = 25°C VCE = 5 V 300 200 18 16 14 12 100 0 0.2 0.5 1 5 10 20 40 60 80 100 10 150 200 1 0 2 IC, COLLECTOR CURRENT (mA) VEB (V) Figure 5. On Voltage Figure 6. Capacitance 3 4 7 6 C ob, CAPACITANCE (pF) COLLECTOR VOLTAGE (mV) 800 5 4 3 2 1 0 10 20 30 40 VCB (V) Figure 7. Capacitance 3/4 LESHAN RADIO COMPANY, LTD. LMSD1819A-RT1G SC−70 (SOT−323) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 3 DIM A A1 A2 b c D E e e1 L HE E HE 1 2 b e A 0.05 (0.002) c A2 L A1 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches 4/4