Order this document by MPSA13/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCES 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES 30 — Vdc Collector Cutoff Current (VCB= 30 Vdc, IE = 0) ICBO — 100 nAdc Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) IEBO — 100 nAdc Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, IB = 0) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max MPSA13 MPSA14 5,000 10,000 — — MPSA13 MPSA14 10,000 20,000 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE (IC = 100 mAdc, VCE = 5.0 Vdc) — Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — 1.5 Vdc Base – Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) — 2.0 Vdc fT 125 — MHz SMALL– SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| S ftest. v 300 ms; Duty Cycle v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 0.02 10 20 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 50 k 100 k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) IC = 10 µA 70 50 100 µA 30 20 1.0 mA 10 1.0 2.0 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 4. Total Wideband Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 5. Wideband Noise Figure 3 SMALL–SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL–SIGNAL CURRENT GAIN 20 C, CAPACITANCE (pF) TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200 k hFE, DC CURRENT GAIN TJ = 125°C 25°C 30 k 20 k 10 k 7.0 k 5.0 k – 55°C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 4 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 10 2.0 3.0 Figure 8. DC Current Gain 5.0 7.0 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100 k 70 k 50 k VCE = 5.0 V f = 100 MHz TJ = 25°C 500 – 1.0 – 2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) – 55°C TO 25°C – 3.0 25°C TO 125°C – 4.0 qVB FOR VBE – 5.0 – 55°C TO 25°C – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 11. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms tP TA = 25°C TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 40 + t1 f + ttP1 PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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