LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. 6 5 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg –55 to +150 °C 1 2 Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 SC-88 (3) (2) Q1 (4) (1) Q2 (5) (6) ORDERING INFORMATION Device Shipping LMBT2222ADW1T1G 3000/Tape & Reel LMBT2222ADW1T3G 10000/Tape & Reel 1/6 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 – Vdc Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 – Vdc Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 – Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX – 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO – – 0.01 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO – 100 nAdc IBL – 20 nAdc 35 50 75 35 100 50 40 – – – – 300 – – – – 0.3 1.0 0.6 – 1.2 2.0 OFF CHARACTERISTICS Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Adc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) hFE Collector–Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base–Emitter Saturation Voltage (Note 2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) – Vdc Vdc 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 2/6 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 3) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 25 pF 2.0 0.25 8.0 1.25 – – 8.0 4.0 50 75 300 375 5.0 25 35 200 – 150 – 4.0 Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) kΩ X 10–4 – mhos ps NF dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –0.5 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td – 10 tr – 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts – 225 tf – 60 ns ns 3. fT is defined as the frequency at which |hfe| extrapolates to unity. 3/6 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 20 30 50 Figure 2. Collector Saturation Region 200 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 3.0 5.0 7.0 300 t, TIME (ns) t, TIME (ns) 100 70 50 2.0 500 IC/IB = 10 TJ = 25°C 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn–On Time 500 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 4. Turn–Off Time 4/6 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 8.0 6.0 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 4.0 2.0 0.5 1.0 2.0 5.0 10 20 4.0 Ccb 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 5.0 3.0 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 7. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Current–Gain Bandwidth Product 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/° C) 0.8 V, VOLTAGE (VOLTS) 50 k 100 k Figure 6. Source Resistance Effects 7.0 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 5.0 k 10 k 20 k Figure 5. Frequency Effects 10 0 500 1.0 k 2.0 k RS, SOURCE RESISTANCE (OHMS) Ceb 0.2 0.3 100 200 f, FREQUENCY (kHz) 20 0.1 0 50 50 100 30 CAPACITANCE (pF) 6.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages 500 1.0 k -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 10. Temperature Coefficients 5/6 LESHAN RADIO COMPANY, LTD. LMBT2222ADW1T1G SOT–363/SC–88 A G V 6 5 4 1 2 3 S DIM A B C D G H J K N S V –B– D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 N J C H K 6/6