66004 Mii 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS DIVISION Grid current modulator Power Supply Feedback Switching between power supplies Patient station isolation DESCRIPTION In the 66004, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0° to +70°C), extended temperature range (-40° to +85°C) and full Military temperature range (-55° to +125°C). Contact the factory for special custom or multi-channel requirements! ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... 35V Emitter-Collector Voltage........................................................................................................................................................ 7V Continuous Collector Current ............................................................................................................................................ 50mA Continuous Transistor Power Dissipation ..................................................................(see Note 1) .............................. 250mW Input to Output Isolation Voltage ........................................................................................................................................ 40kV Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature ................................................... 100mA Reverse Input Voltage .......................................................................................................................................................... .2V Continuous LED Power Dissipation ..........................................................................(see Note 1) ................................ 250mW Storage Temperature........................................................................................................................................ -65°C to +150°C Operating Free-Air Temperature Range .......................................................................................................... -55°C to +125°C Lead Solder Temperature (1/16” from case for 10 seconds max.) ..................................................................................240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 2.45 mW/°C. Package Dimensions Schematic Diagram (1) A N O D E (+ ) A -X 01 C O LLE C T O R (+ ) Ø 0.01 75 [Ø 0.44] BASE E Ø 0.15 50 [Ø 3.94] Ø 0.01 75 [Ø 0.44] C A T H O D E (-) E M IT T E R (-) Ø 0.31 00 [Ø 7.87] (2) 16,00 0 V , B LA C K D O T (1) RED DOT 2 LE A D S 0.500 M IN [12 .70] C B K A -X 02 C (3) (5) (4) (3) 3 LE A D S 0.500 M IN [12 .70] (2) 0.849 3 [21.57] (5) K B (4) N O TE : B LA C K D O T IN D IC A TE S A N O D E F O R LE D R E D D O T IN D IC A T E S C O LLE C TO R F O R T R A N S IS T O R . A LL D IM E N S IO N S A R E IN IN C H E S [M ILLIM E TE R S ] N O M IN A L MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 7-3 66004 40kV HIGH VOLTAGE ISOLATER ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current 66004-X01 66004-X02 IR Input Diode Static Forward Voltage 66004-X01 66004-X02 VF Reverse Breakdown Voltage 66004-X01 66004-X02 BVR Input Diode Capacitance 66004-X01 66004-X02 CIN MIN TYP MAX UNITS TEST CONDITIONS 100 µA VR = 2V 1.8 V IF = 20mA 10 V IR = 100µA 25 pF V = 0V, f = 1MHz UNITS TEST CONDITIONS V IC = 1mA, IB = 0, IF = 0 75 300 nA nA VCE = 10V, IF = 0mA MAX UNITS TEST CONDITIONS % VCE = 5V, IF = 10mA V IF = 50mA, IC = 1mA 1.15 2 OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Dark Current SYMBOL MIN V(BR)CEO 35 TYP MAX ICEO COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Current Transfer Ratio 66004-X01 SYMBOL MIN CTR 5 66004-X02 Collector-Emitter Saturation Voltage 66004-X01 TYP 100 VCE(SAT) 0.5 66004-X02 DC Isolation Voltage 66004-X01 1.2 VISO 66004-X02 Rise Time 66004-X01 40 tr 10 66004-X02 Fall Time 66004-X01 kV 40 20 tf µs VCC = 5V, IF =16mA, RL=100Ω µs VCC = 5V, IF =16mA, RL=100Ω 10 66004-X02 20 RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, High Level IFH 16 50 mA Supply Voltage VCE 5 10 V TA -55 125 °C Operating Temperature SELECTION GUIDE PART # 66004-001 66004-101 66004-011 66004-002 66004-102 66004-012 PART DESCRIPTION Transistor output, military operating range (-55° to +125°C) Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Transistor output, commercial version Isolator(0° to 70°C) Darlington output, military operating range (-55° to +125°C) Darlington output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) Darlington output, commercial version Isolator(0° to 70°C) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 7-4