66183 Mii PROTON RADIATION TOLERANT OPTOCOUPLER (Single Channel, Electrically Similar to 4N49) OPTOELECTRONIC PRODUCTS DIVISION REVISION C 5/6/02 Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature +1000V electrical isolation Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66183 is a single channel device electrically similar to the 4N49. This product has been designed to be more tolerant to proton radiation. The 66183 optocoupler is packaged in a hermetically sealed 6 pin leadless chip carrier (LCC). This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500 to Class S level. ABSOLUTE MAXIMUM RATINGS Input to Output Voltage........................................................................................................................................................... 1kV Emitter-Base Voltage................................................................................................................................................................ 7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ......................... 40V Collector-Base Voltage ........................................................................................................................................................... 45V Reverse Input Voltage ............................................................................................................................................................. 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ................................... 50mA Peak Forward Input Current (Value applies for tw ≤1µs, PRR < 300 pps) ............................................................................. 1A Continuous Collector Current ..............................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)................................ 300mW Storage Temperature......................................................................................................................................... -55°C to +150°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max.) .................................................................................................................. 240°C Notes: 1. Derate linearly to 100°C free-air temperature at the rate of 0.80 mW/°C above 25°C. 2. Derate linearly to 100°C free-air temperature at the rate of 3 mW/°C above 25°C. Package Dimensions 0.253 [6.42] 0.237 [6.01] Schematic Diagram 0.087 [2.22] 0.071 [1.81] 1 C 3 PIN 1 IDENTIFIER 0.178 [4.52] 0.162 [4.11] 0.036 [0.91] 0.020 [0.51] 2 1 4 6 5 0.098 [2.49] 0.082 [2.08] 0.113 [2.87] 0.097 [2.46] 3 E 0.055 [1.40] 0.045 [1.14] 6 0.078 [1.99] 0.062 [1.58] ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 5 - 40 B 5 4 66183 PROTON RADIATION TOLERANT OPTOCOUPLER (Electrically similar to 4N49) REVISION C 5/6/02 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP IR -55°C Input Diode Static Forward Voltage ° VF 1.0 Input Diode Static Forward Voltage +25 C VF 0.8 Input Diode Static Forward Voltage +100°C VF 0.8 1.8 MAX UNITS TEST CONDITIONS 100 µA VR = 3V 2.2 V IF = 10mA 2.0 V IF = 10mA 2.2 V IF = 10mA MAX NOTE OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 45 V IC = 100µA, IB = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 2 V IC = 0mA, IE = 100µA, IF = 0 Off-State Collector Current +100°C TYP ICEO 100 nA VCE = 20V, IF = 0mA, IB = 0 ICEO 100 µA VCE = 20V, IF = 0mA, IB = 0 MAX NOTE COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN UNITS TEST CONDITIONS IC(ON) 2.0 mA VCE = 5V, IF = 1mA, IB=0 On State Collector Current TYP On State Collector Current +100°C IC(ON) 2.0 mA VCE = 5.0V, IF = 2mA, IB=0 On State Collector Current -55°C IC(ON) 2.8 mA VCE = 5V, IF = 2mA, IB=0 Collector-Emitter Saturation Voltage VCE(SAT) Input to Output Internal Resistance RIO Input to Output Capacitance CIO 2.5 tr 10 Rise Time-Phototransistor Operation 0.3 NOTE V IF = 2mA, IC= 2mA Ω VIN-OUT = 1000V 1 5 pF f = 1MHz, VIN-OUT = 1000V 1 25 µs VCC = 10V, IF = 10mA, 11 10 RL = 100Ω, IB = 0 Fall Time-Phototransistor Operation tf 10 µs 25 VCC = 10V, IF = 10mA, RL = 100Ω, IB = 0 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter must be measured using pulse techniques (tW = 100µs duty cycle < 1%). RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level IFL 0 90 µA Input Current, High Level IFH 2 10 mA Supply Voltage VCE 5 10 TA -55 100 Operating Temperature V ° C SELECTION GUIDE PART NUMBER 66183-001 66183-101 66183-103 66183-105 PART DESCRIPTION Single channel proton radiation tolerant optocoupler - commercial Single channel proton radiation tolerant optocoupler – screened to JAN Single channel proton radiation tolerant optocoupler – screened to JANTX Single channel proton radiation tolerant optocoupler – screened to JANTXV MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 5 - 41