66228 3C91C TYPE PROTON RADIATION TOLERANT OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION 09/22/2010 Features: Applications: • • • • • • • • • • High Reliability Base lead eliminated for improved noise immunity Rugged package Stability over wide temperature +500 V electrical isolation Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66228 optocoupler consists of an 850 nm GaAlAs LED optically coupled to a silicon planar phototransistor. This LED has proven to be highly tolerant to proton radiation and to be more tolerant of operating temperatures over 100°C than the more commonly used 660 nm LED. The optocoupler is built on a TO-72 header. The anode of the LED is electrically connected to the case. The internal base connection has been eliminated for improved noise immunity. ABSOLUTE MAXIMUM RATINGS Emitter-Collector Voltage ....................................................................................................................................................... 7 V Collector-Emitter Voltage ................................................................................................................................................... 60 V Reverse Input Voltage .......................................................................................................................................................... 7 V Input Diode Continuous Forward Current (Note 1) ......................................................................................................... 50 mA Peak Forward Input Current (value applies for tw < 1µs, PRR < 300 pps) .....................................................................500 mA Continuous Collector Current ........................................................................................................................................... 50 mA Continuous Transistor Power Dissipation (Note 2) ....................................................................................................... 230 mW Input to Output Isolation Voltage ..................................................................................................................................... 1000 V Storage Temperature ........................................................................................................................................ -65°C to +150°C Operating Free-Air Temperature Range .......................................................................................................... -55°C to +125°C Lead Solder Temperature (10 seconds, 1/16” from case) .............................................................................................. 260°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.5 mA/°C. 2. Derate linearly to 125°C free-air temperature at the rate of 2.3 mW/°C. Package Dimensions 4 LEADS 0.019 [0.48] 0.016 [0.41] 0.230 [5.84] 0.209 [5.31] Schematic Diagram EMITTER ANODE Ø0.100 [2.54] 0.195 [4.95] 0.178 [4.52] A 4 2 C K 1 3 E 3 2 4 0.048 [1.22] 0.028 [0.71] 1 COLLECTOR 0.210 [5.34] 0.170 [4.32] 0.500 [12.70] MIN ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] CATHODE 45° 0.046 [1.17] 0.036 [0.91] ANODE ELECTRICALLY CONNECTED TO CASE. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 66228 3C91C TYPE PROTON RADIATION TOLERANT OPTOCOUPLER 09/22/2010 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS 1 µA VR = 3 V Input Diode Static Reverse Current IR Input Diode Static Forward Voltage VF 1.15 1.2 V IF = 2 mA Input Diode Static Forward Voltage VF 1.5 1.8 V IF = 50 mA 12 V IR = 8 µA 25 pF V = 0 V, f = 1 MHz UNITS TEST CONDITIONS Reverse Breakdown Voltage BVR Input Diode Capacitance CIN 6 OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN Collector-Emitter Breakdown Voltage V(BR)CEO 50 V IC = 1 mA, IB = 0, IF = 0 Emitter-Collector Breakdown Voltage V(BR)ECO 7 V IC = 10 µA, IE = 10 µA, IF = 0 Collector-Emitter Dark Current TYP MAX ICEO1 50 nA VCE = 50 V, IF = 0 mA ICEO2 10 nA VCE = 5 V, IF = 0 mA MAX UNITS TEST CONDITIONS mA VCE = 5 V, IF = 10 mA mA VCE = 0.4 V, IF = 10 mA mA VCE = 5 V, IF = 10 mA V IF = 50 mA, IC = 10 mA Ω VIN-OUT = 1000 V COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN On State Collector Current IC(ON) 4 On State Collector Current IC(ON) 3 IC(ON) 2 -55°C On State Collector Current Collector-Emitter Saturation Voltage TYP 20 VCE(SAT) 0.4 9 Isolation Resistance RISO 10 Input to Output Capacitance CIO 2 2.5 pF f = 1 MHz Delay Time td 2 4 µs VCE = 5 V, IF = 2 mA, RL = 100 Ω Storage Time ts 0.2 0.5 µs VCE = 5 V, IF = 2 mA, RL = 100 Ω Rise Time tr 3 5 Fall Time tf 4 5 µs VCE = 5 V, IF = 2 mA, RL = 100 Ω VCE = 5 V, IF = 2 mA, RL = 100 Ω µs RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS IFL 0 1 µA Input Current, High Level IFH 2 10 mA Supply Voltage VCE 5 50 V TA -55 125 °C Input Current, Low Level Operating Temperature SELECTION GUIDE PART NUMBER 66228-001 66228-101 PART DESCRIPTION Commercial Screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM