bq2058T Lithium Ion Pack Supervisor For 2-Cell Packs Features General Description ➤ Protects and individually monitors two Li-Ion series cells for overvoltage, undervoltage The bq2058T Lithium Ion Pack Supervisor is designed to control the charge and discharge cell voltage limits for two lithium-ion (Li-Ion) series cells, accommodating battery packs containing series/parallel configurations. The low operating current does not overdischarge the cells during periods of storage and does not significantly increase the system discharge load. The bq2058T can be part of a low-cost Li-Ion charge control system within the battery pack. ➤ Monitors pack for overcurrent ➤ Designed for battery pack integration ➤ Minimal external components ➤ Drives external FET switches ➤ Selectable overvoltage (V OV ) thresholds - Mask programmable by Benchmarq - Standard version–4.25V ➤ Supply current: 12µA typical ➤ Sleep current: 0.7µA typical ➤ 16-pin 150-mil narrow SOIC The bq2058T controls two external FETs to limit the charge and discharge potentials. The bq2058T allows charging when each individual cell voltage is below VOV (overvoltage limit). If the voltage on any cell exceeds VOV for a user-configurable delay period (tOVD), the open-drain CHG pin goes to the high-impedance state, shutting off charge to the battery pack. This safety feature prevents overcharge of any cell within the battery pack. After an overvoltage condition occurs, each cell must fall below VCE (charge enable voltage) for the bq2058T to re-enable charging. The bq2058T protects batteries from overdischarge. If the voltage on any cell falls below VUV (undervoltage limit) for a user-configurable delay period (tUVD), the DSG output is driven low, shutting off the battery discharge. This safety feature prevents overdischarge of any cell within the battery pack. The bq2058T also stops discharge on detection of an overcurrent condition, such as a short circuit. If an overcurrent condition occurs for a userconfigurable delay period (tOCD), the DSG output is driven low, disconnecting the load from the pack. DSG remains low until removal of the short circuit or overcurrent condition. Pin Names Pin Connections CHG Charge control output CTL Pack disable input CHG 1 16 DSG CTL 2 15 VCC VSS 3 14 UVD VSS Low potential input CSL 4 13 OVD CSL BAT2N 5 12 OCD Overcurrent sense low-side input BAT2N 6 11 VCC BAT2N 7 10 CSH BAT1N 8 9 BAT2N Battery 2 negative input BAT1N Battery 1 negative input BAT1P 16-Pin Narrow SOIC PN2058T1.eps July 1997 1 DSG Discharge control output UVD Undervoltage delay input OVD Overvoltage delay input OCD Overcurrent delay input VCC High potential input CSH Overcurrent sense high-side input BAT1P Battery 1 positive input bq2058T UVD Pin Descriptions CHG This input uses an external capacitor to VCC to set the undervoltage delay timing. Charge control output This open-drain output controls the charge path to the battery pack. Charging is allowed when high. CTL OVD OCD When high, this input allows an external source to disable the pack by making both DSG and CHG inactive. For normal operation, the CTL pin is low. Low potential input CSL Overcurrent sense low-side input VCC High potential inputs (2 pins) CSH Overcurrent sense high-side input T h i s i n p u t i s co n n e cte d b e tw e e n the high-side discharge FET (or sense resistor) and BAT1P to enable overcurrent sense in the battery pack’s positive supply path. BAT1P Battery 2 negative inputs (3 pins) Battery 1 positive input This input is connected to the positive terminal of the cell designated BAT1 in Figure 2. These pins are connected to the negative terminal of the cell designated BAT2 in Figure 2. BAT1N Overcurrent delay input This input uses an external capacitor to VCC to set the overcurrent delay timing. This input is connected between the low-side discharge FET (or sense resistor) and BAT2N to enable overcurrent sensing in the battery pack’s ground path. BAT2N Overvoltage delay input This input uses an external capacitor to VCC to set the overvoltage delay timing. Pack disable input VSS Undervoltage delay input Battery 1 negative input This input is connected to the negative terminal of the cell designated BAT1 in Figure 2. DSG Discharge control output This push-pull output controls the discharge path to the battery pack. Discharge is allowed when high. July 1997 2 bq2058T Sel2 Sel1 Cell Inputs Pin 9 B1P Pin 8 B1N + - Pin 7 B2N Pin 3 VOV + D CK D Q Chip Negative Supply Sel2 CK Any_Above_VOV Sel1 Out Edge QB Reset Non-Retrigger Oneshot Reset D Q CK Over_charge Pin 1 QB CHG Charge Control Output (open drain) Capacitor Pin 13 OVD Discharge Off Delay Capacitor Input QB All_Below_VCE Any_Below_VUV + VCE Sleep D CK D Q Sel2 QB D Q Sel1 Pin 10 CSH Pin 9 Pin 4 Pin 7 Sel2 CSL B2N CK Overcurrent Delay Capacitor Input D Q CK QB Reset DSG Discharge Control Output (totem pole) 70mV + 70mV + Out Edge QB Sel1 Non-Retrigger Oneshot Reset B1P D Q VUV QB Capacitor UVD Pin 14 Charge Off Delay Capacitor Input CK QB + Pin 16 Out Edge CK Pin 10 CSH Pin 9 Pin 4 Pin 7 Pin 12 OCD Non-Retrigger Oneshot Reset D CK Q QB Over_current Reset Capacitor 160mV B1P + CSL 160mV B2N + Pin 2 CTL External Output Control Figure 1. Block Diagram July 1997 3 BD2058T1.eps bq2058T The bq2058T samples a cell every 60ms (typical). Every sample is a fully differential measurement of each cell. During this sample period, the bq2058T compares the measurements with these thresholds to determine if any of the these conditions exist: VOV, VUV, and VCE. Functional Description Figure 1 is a block diagram outlining the major components of the bq2058T. Figure 2 shows a low-side control connection diagram. The following sections detail the various functional aspects of the bq2058T. Overcurrent and charge detect are conditions that are not sampled, but are continuously monitored. Thresholds Initialization The bq2058T monitors the lithium ion pack for the conditions listed below. Shown with these conditions are the respective thresholds used to determine if that condition exists: ■ Overvoltage (VOV) ■ Undervoltage (VUV) ■ Overcurrent (VOCH, VOCL) ■ Charge Enable (VCE) ■ Charge Detect (VCD) On initial power-up, such as connecting the battery pack for the first time to the bq2058T, the bq2058T enters the low-power sleep mode, disabling the DSG output. It is recommended that a top to bottom cell connection be made at pack assembly for proper initialization. A charging supply must be applied to the bq2058T circuit to enable the pack. See Low-Power Sleep Mode and Charge Detect sections. POS R2 CHG DSG CTL VCC VSS UVD CSL OVD BAT2N OCD BAT2N VCC BAT2N BAT1N CSH C1 C2 C3 BAT1 C4 BAT1P bq2058T R1 BAT2 C5 C7 Q1 NEG Q2 C6 FG2058T1.eps Figure 2. 2-Cell Connection Diagram, Low-Side Control July 1997 4 bq2058T Table 1. Overvoltage Threshold Options Low-Power Sleep Mode The bq2058T enters the low-power sleep mode in two different ways: 1. On initial power-up. 2. After the detection of an undervoltage condition–VUV. Part # VOV Limit bq2058T 4.25V bq2058TR 4.35V The overvoltage threshold limits are programmed at Benchmarq. The bq2058T is the standard option that is more readily available for sampling and prototyping purposes. Please contact Benchmarq for other voltage threshold and tolerance options. When the bq2058T enters the low-power sleep mode, DSG is driven low and the device consumes 0.7µA (typical). The bq2058T only comes out of low-power sleep mode when a valid charge detect condition exists. Charge Detect Charge Enable The bq2058T continuously monitors for a charge detect condition. A valid charge detect condition exists when either of the conditions is true: A valid charge enable indicates that an overvoltage (overcharge) condition no longer exists and that the pack is ready to accept further charge. Once overvoltage protection is asserted, charging will not be enabled until all cell voltages fall below VCE. The VCE threshold is a function of VOV, and changes with different VOV limits. CSL < BAT2N - 70mV (VCD) CSH > BAT1P + 70mV (VCD) A valid charge detect enables the DSG output, allowing charging of the lithium ion cells. This is accomplished by applying the charging supply to the pack. VCE = VOV - 150mV Undervoltage Overcurrent Undervoltage (or overdischarge) protection is asserted when any cell voltage drops below the VUV threshold and remains below the V UV threshold for a time exceeding a user-configurable delay (tUVD). The DSG output is driven low, disabling the discharge of the pack. The bq2058T then enters the low-power sleep mode. VUV is defined as follows: The bq2058T detects an overcurrent (or short circuit) condition only in the discharge direction. Overcurrent protection is asserted when either of the conditions occu rs a n d re ma i n f o r a ti me e x ce e d i n g a u s erconfigurable delay (tOCD): CSL > BAT2N + VOCL CSH < BAT1P - VOCH VUV = 2.25V where: Overvoltage VOCL = 160mV (low-side detect) Overvoltage (or overcharge) protection is asserted when any cell voltage exceeds the VOV threshold and remains above the VOV threshold for a time exceeding a userconfigurable delay (tOVD). The CHG pin goes to the high impedance state, disabling charge into the battery pack. Since the charge control output is an open drain output, a pull-down resistor is needed from the CHG pin to the negative side of the pack. This pulls the gate of the charge FET low when the CHG pin goes to high impedance. Charging is disabled until a valid charge enable exists. See Charge Enable section. VOCH = 160mV (high-side detect) When either of these conditions occurs, DSG is driven low, disconnecting the load from the pack. DSG remains low until both of the voltage conditions are false, indicating removal of the short-circuit condition. The user can facilitate clearing these conditions by inserting the battery pack into a charger. Important note: If any battery pin floats (BAT1P, BAT1N, BAT2N), the bq2058T assumes an overvoltage has occurred. The high-side overcurrent sense can be disabled by connecting CSH to BAT1P. This ensures that CSH is never greater than BAT1P. If high-side detection is disabled, low-side detection must be used with CSL. Because of different manufacturers’ specifications for overvoltage thresholds, the bq2058T can be available with different VOV options. Table 1 summarizes these different voltage thresholds. The FETs in the charge/discharge path controlled by the CHG and DSG pins affect the overcurrent level. The on-resistance of these FETs need to be taken into account when determining overcurrent levels. July 1997 5 bq2058T Important note: If CTL floats, it is internally pulled high making both DSG and CHG inactive, thus disabling the pack. If CTL is not used, it should be tied to VSS. CHG and DSG States The CHG and DSG output truth table is shown below: Condition Normal operation Overvoltage Undervoltage Overcurrent Floating battery input CTL = high CHG pin High Z High High Z Z DSG pin High High Low Low Indeterminate Low The polarity of CTL is mask-programmable at Benchmarq. Please contact Benchmarq for other polarity options. Protection Delay Timers The delay time between the detection of an overcurrent, overvoltage, or undervoltage condition and the deactivation of the CHG and/or DSG outputs is user-configurable by the selection of capacitor values between VCC and OCD, OVD, and UVD pins (respectively. See Table 2 below. The polarities of CHG and DSG are mask programmable at Benchmarq. Push-pull vs. open-drain configuration is also mask-configurable at Benchmarq. Please contact Benchmarq for availability of these variations. The fault condition must persist through the entire delay period, or the bq2058T may not deactivate either FET control output. Pack Disable Input–CTL Figure 3 shows a step-by-step event cycle for the bq2058T. The CTL pin is used to electrically disconnect the battery from the pack terminals through an externally supplied signal. When CTL is taken high, CHG goes to the high impedance state and DSG is driven low. Any load on the pack terminals will be interpreted as an overcurrent condition by the bq2058T with the overcurrent delay timer held in reset. When the CTL pin is driven low, the overcurrent delay timer is allowed to start. If the programmed delay (tOCD) is too short, the overcurrent recovery circuit, if implemented, will be unable to correct the overcurrent situation prior to the delay timeout. It is recommended that a delay time of greater than 10ms (COCD ≥ 0.01µF) be used if the CTL pin function is to be utilized. Table 2. Protection Delay Timers Protection Feature Typical Delay Period Capacitor from VCC to: Overcurrent tOCD OCD 0.010µF 12ms ±40% Overvoltage tOVD OVD 0.100µF 950ms ±40% Undervoltage tUVD UVD 0.100µF 950ms ±40% Notes: Capacitor Time Tolerance 1. The delay time versus capacitance can be approximated by the following equations:. For tOCD: For tOVD, tUVD: t(s) ≈ 1.2 ∗ C(µf), t(s) ≈ 9.5 ∗ C(µf), where 0.001µF ≤ C ≤ 0.1µF where 0.01µF ≤ C ≤ 1µF 2. Overvoltage and undervoltage conditions are sampled by the bq2058T. The delay in Table 2 is in addition to the time required for the bq2058T to detect the violation, which may vary from 0 to 120 ms depending on where in the sampling period the violation occurs. Overcurrent is continuously monitored and is subject to a delay of approximately 1.5ms. July 1997 6 bq2058T 0 1 2 3 VOV 4 5 6 7 8 9 10 11 12 VCE VUV Cell Voltage BAT2N + 160mV (VOCL) CSL BAT2N - 70mV (VCD) DSG tOCD tUVD CHG tOVD CTL TD2058T1.eps Figure 3. Protector Event Diagram Event Definition: 0: The bq2058T is in the low-power sleep mode because one or more of the cell voltages are below VUV. 1: A charger is applied to the pack, causing the difference between CSL and BAT2N to become greater than 70mV. This awakens the bq2058T, and the discharge pin DSG goes high. 2: One or more cells charge to a voltage equal to VOV, initiating the overvoltage delay timer. 3: The overvoltage delay time expires, causing CHG to go to high impedance (pulled low externally). 4: All cell voltages fall below VCE, causing CHG to go high. 5: Stop charging, apply a load. 6: An overcurrent condition is detected, initiating the overcurrent delay timer. 7: The overcurrent delay time expires, causing DSG to go low. 8: The overcurrent condition is no longer present. DSG is driven high. 9: Pin CTL is driven high; both DSG and CHG go inactive. 10: Pin CTL is driven low; both DSG and CHG go active resuming their normal function. 11: One or more cells fall below VUV, initiating the overdischarge delay timer. 12: Once the overdischarge delay timer expires, if any of the cells is below VUV, the bq2058T drives DSG low and enters the low-power sleep mode. July 15, 1997 7 bq2058T Absolute Maximum Ratings Symbol Parameter Value Unit 18 V Conditions VCC Supply voltage TOPR Operating temperature -30 to +70 °C TSTG Storage temperature -55 to +125 °C TSOLDER Soldering temperature 260 °C For 10 seconds IIN Maximum input current ±100 µA All pins except VCC, VSS Notes: Relative to VSS 1 Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability. 2. Internal protection diodes are in place on every pin relative to VCC and VSS. See picture below. VCC VCC Any pin CHG pin (except CHG) VSS FG2058tx .eps July 1997 8 bq2058T DC Electrical Characteristics (TA = TOPR) Symbol Parameter Minimum Typical Maximum Unit Conditions/Notes VOH Output high voltage VCC - 0.5 - - V IOH = 10µA, CHG, DSG VOL Output low voltage - - VSS + 0.5 V IOL = 10µA, CHG, DSG VOP Operating voltage 0 - 9.0 V VCC relative to VSS VIL Input low voltage - - VSS + 0.5 V Pin CTL VIH Input high voltage VSS + 2.0 - - V Pin CTL ICCA Active current - 12 25 µA ICCS Sleep current - 0.7 1.5 µA RCELL Input impedance - 10 - MΩ Pins BAT2N, BAT1N, and BAT1P DC Thresholds (TA = TOPR) Symbol VOV Parameter Overvoltage threshold Value Unit Tolerance 4.25 V ±55mV Table 1 Conditons See note 1 Customer option VCE Charge enable threshold VOV - 150mV V ±55mV VUV Undervoltage threshold 2.25 V ±100mV VOCH Overcurrent detect high-side 160 mV ±35mV VOCL Overcurrent detect low-side 160 mV ±35mV VCD Charge detect threshold 70 mV -60mV, +80mV tOVD Overvoltage delay threshold 950 ms ±40% COVD = 0.100µF TA = 30°C See note 2 tUVD Undervoltage delay threshold 950 ms ±40% CUVD = 0.100µF TA = 30°C See note 2 tOCD Overcurrent delay threshold 12 ms ±40% COCD = 0.01µF TA = 30°C Notes: 1. Standard device. Contact Benchmarq for different thresholds and tolerance options 2. Does not include cell sampling delay, which may add up to 120ms of additional delay until the condition is detected. July 1997 9 bq2058T Typical Characteristics bq2058T 4.25V OVERVOLTAGE THRESHOLD VS FREE-AIR TEMPERATURE 4.280 VOV – Overvoltage – V 4.270 4.260 4.250 4.240 4.230 Measurement accuracy ± 2mV 4.220 4.210 -30 -20 -10 0 10 20 30 40 50 60 70 TA – Free-Air Temperature – ˚C Figure 4 July 1997 10 bq2058T Data Sheet Revision History Change No. 1 Page No. 5 Description CHG pin output state Nature of Change CHG pin state at overvoltage and floating battery input was low, is now Z 1 9 Overcurrent limits 1 9 Charge detect threshold 2 2 4 4 Overvoltage options, Table 1 Figure 2 Was: VOCL = 100mV ±25mV Is: VOCL = 150mV ±25mV Was: 70mV +10mV, +80mV Is: 70mV -60mV, +80mV Added bq2058TR Corrected schematic 2 6, 9 2 7 DSG and CHG timing diagram 2 7 Timing Diagram 2 8 Maximum input current 2 9 VOV tolerance 2 9 Overcurrent limits 2 9 VOP Note: Delay thresholds Was: tOCD = 10ms ±30% tOVD = 800ms ±30% tUVD = 800ms ±30% Is: tOCD = 12ms ±40% tOVD = 950ms ±40% tUVD = 950ms ±40% Inverted lines for proper logic levels Was: CSH timing Is: CSL timing Added IIN Was: ±50mV Is: ±55mV Was: VOCH = 160mV +25mV VOCL = 150mV +25mV Is: VOCH = 160mV +35mV VOCL = 160mV +35mV Was: 0V min, 18V max Is: 4V min, 9V max Change 1 = June 19, 1997 changes from April 22, 1997. Change 2 = July 1997 changes from June 19, 1997 July 1997 11 bq2058T SN: 16-Pin SN (0.150" SOIC) 16-Pin SN (0.150" SOIC) Inches D e E H A C Min. Max. Min. Max. A 0.060 0.070 1.52 1.78 A1 0.004 0.010 0.10 0.25 B 0.013 0.020 0.33 0.51 C 0.007 0.010 0.18 0.25 D 0.385 0.400 9.78 10.16 E 0.150 0.160 3.81 4.06 Dimension B A1 .004 Millimeters e 0.045 0.055 1.14 1.40 H 0.225 0.245 5.72 6.22 L 0.015 0.035 0.38 0.89 L July 1997 12 bq2058T Ordering Information bq2058T XXXX Standard Device: Blank = Standard device XXXX = Customer code assigned by Benchmarq Package Option: SN = 16-pin narrow SOIC Overvoltage Threshold Blank = 4.25V (Standard device) Contact factory for availability of other thresholds Device: bq2058T Lithium Ion Pack Supervisor TA -30°C to +70°C Note: Package Devices VOV Threshold 16-pin Narrow SOIC (SN) 4.25V bq2058TSN 4.35V bq2058TRSN bq2058TSN is Standard Device Contact factory for availability of other thresholds and tolerances. July 1997 13 Notes July 1997 14 Notes July 1997 15 bq2058T BENCHMARQ Microelectronics, Inc. 17919 Waterview Parkway Dallas, Texas 75252 Fax: (972) 437-9198 Tel: (972) 437-9195 E-mail: benchmarq @ benchmarq.com World Wide Web: http://www.benchmarq.com Copyright © 1997, BENCHMARQ Microelectronics, Inc. All rights reserved. No part of this data sheet may be reproduced in any form or means, without express permission from Benchmarq. Benchmarq reserves the right to make changes in its products without notice. Benchmarq assumes no responsibility for use of any products or circuitry described within. No license for use of intellectual property (patents, copyrights, or other rights) owned by Benchmarq or other parties is granted or implied. Benchmarq does not authorize the use of its components in life-support systems where failure or malfunction may cause injury to the user. If Benchmarq components are used in life-support systems, the user assumes all responsibilities and indemnifies Benchmarq from all liability or damages. Benchmarq is a registered trademark of BENCHMARQ Microelectronics, Inc. Printed in U.S.A. July 1997 16 PACKAGE OPTION ADDENDUM www.ti.com 30-Mar-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ2058TRSN-C2 OBSOLETE SOIC D 16 TBD Call TI Call TI BQ2058TSN-C2 OBSOLETE SOIC D 16 TBD Call TI Call TI Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. 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