BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 3 BASE 1 EMITTER TO−92 CASE 29 STYLE 14 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 STRAIGHT LEAD BULK PACK MARKING DIAGRAMS BC64 0−16 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 1 1 Publication Order Number: BC640/D BC640−016G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −80 − − −80 − − −5.0 − − Vdc − − − − −100 −10 nAdc mAdc 25 100 25 − − − − 250 − − −0.25 −0.5 − − −1.0 − 150 − − 9.0 − − 110 − OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0, TA = 125°C) ICBO Vdc Vdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −5.0 mAdc, VCE = −2.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) (IC = −500 mA, VCE = −2.0 V) hFE Collector − Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base − Emitter On Voltage (IC = −500 mAdc, VCE = −2.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cob Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cib 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Device BC640−016G Package Shipping TO−92 (Pb−Free) 5000 Units / Bulk http://onsemi.com 2 MHz pF pF BC640−016G 500 -1000 -200 VCE = -2 V SOA = 1S -B PD TA 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -500 -100 -50 PD TC 25°C -20 -10 -5 -2 -1 -1 BC636 BC638 BC640 PD TA 25°C PD TC 25°C 200 -A 50 20 -2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -L 100 -1 -3 -5 -300 -500 -1000 Figure 2. DC Current Gain 500 -1 300 V, VOLTAGE (VOLTS) -0.8 VCE = -2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 20 -1 -10 -100 IC, COLLECTOR CURRENT (mA) 0 -1 -1000 Figure 3. Current Gain Bandwidth Product θV, TEMPERATURE COEFFICIENTS (mV/ °C) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -10 -100 IC, COLLECTOR CURRENT (mA) Figure 4. “Saturation” and “On” Voltages -0.2 -1.0 VCE = -2 VOLTS DT = 0°C to +100°C -1.6 qV for VBE -2.2 -1 -3 -5 -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -300 -500 -1000 Figure 5. Temperature Coefficients http://onsemi.com 3 -1000 BC640−016G PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AN A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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