RoHS BC640 BC640 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -100 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N O Test R T conditions - 80 V IE= -100µA, IC=0 -5 V Transition frequency fT VCE= -5V, IC=- 50mA, J E ICBO VCB=-30V, IE=0 -0.1 µA IEBO VEB= -5V, IC=0 - 0.1 µA hFE(1) VCE= -2V, IC=- 5mA 40 hFE(2) VCE= -2V, IC=- 150mA 63 VCE(sat) IC=- 500mA, IB= -50mA -0.5 V -1 V 250 100 CLASSIFICATION OF hFE(2) W Rank Range WEJ ELECTRONIC CO. UNIT Ic=- 1mA, IB=0 VCE= -2V, IC= -500mA E Collector-emitter saturation voltage MAX V VBE DC current gain TYP -100 Base-emitter voltage Emitter cut-off current MIN Ic= -100µA, IE=0 C E L Collector cut-off current 1 2 3 unless otherwise specified) Symbol Collector-base breakdown voltage C O A B 63-160 100-250 Http:// www.wej.cn E-mail:[email protected] MHz