DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance 1.25 ± 0.1 Cre = 0.4 pF TYP. QUANTITY 2SC4959–T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 3 1 0.3 Marking 0.9 ± 0.1 2SC4959–T2 PACKING STYLE 2 * Please contact with responsible NEC person, if you require evaluation 0 to 0.1 sample. 0.15 +0.1 –0.05 PART NUMBER 2.0 ± 0.2 0.3 +0.1 –0 0.65 0.65 ORDERING INFORMATION 0.3 +0.1 –0 • • • Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C 1. Emitter 2. Base 3. Collector Caution; Electrostatic sensitive Device. Document No. P10382EJ2V0DS00 (2nd edition) (Previous No. TD-2410) Date Published July 1995 P Printed in Japan The mark ★ shows revised points. © 1995 1992 2SC4959 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 0.1 µA VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 1 V, IC = 0 DC Current Gain hFE 75 Gain Bandwidth Product fT 12 Feed back Capacitance Cre 0.4 |S21e|2 Insertion Power Gain Noise Figure 7 NF VCE = 3 V, IC = 10 mA*1 150 GHz 0.7 8.5 1.5 2.5 *1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. VCE = 3 V, IC = 10 mA, f = 2.0 GHz pF VCB = 3 V, IE = 0, f = 1 MHz*2 dB VCE = 3 V, IC = 10 mA, f = 2.0 GHz dB VCE = 3 V, IC = 3 mA, f = 2.0 GHz hFE Classification Rank T83 Marking T83 hFE 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 °C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE IC – Collector Current – mA PT – Total Power Dissipation – mW 50 Free Air 200 100 0 50 100 TA – Ambient Temperature – °C 2 150 VCE = 3 V 40 30 20 10 0 0.5 VBE – Base to Emitter Voltage – V 1.0 2SC4959 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 60 200 50 400 mA hFE – DC Current Gain IC – Collector Current – mA 500 mA 40 300 mA 30 200 mA 20 A IB = 100 m 5V VCE = 3 V 100 10 0 1 2 3 4 5 0 0.1 0.2 6 0.5 VCE – Collector to Emitter Voltage – V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 5 10 20 50 100 INSERTION POWER GAIN vs. COLLECTOR CURRENT 10 f = 2 GHz – Insertion Power Gain – dB f = 2 GHz 12 5V 3V 10 8 VCE = 1 V 5V 8 3V VCE = 1 V 6 4 2 6 4 2 0.5 2 1 2 5 10 20 50 1 NOISE FIGURE vs. COLLECTOR CURRENT 5 10 50 20 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 4 f = 1 MHz Cre – Feed-back Capacitance – pF f = 2 GHz VCE = 3 V 3 2 1 0 0.5 2 IC – Collector Current – mA IC – Collector Current – mA NF – Noise Figure – dB 2 S21e fT – Gain Bandwidth Product – GHz 14 1 IC – Collector Current – mA 1 2 5 10 IC – Collector Current – mA 20 50 0.5 0.4 0.3 0.2 0.5 1 2 5 10 20 VCB – Collector to Base Voltage – V 3 2SC4959 S–PARAMETER (VCE = 3 V, IC = 1 mA, ZO = 50 Ω) f S21 S11 (GHz) MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.9340 0.9040 0.8150 0.7530 0.6540 0.5900 0.5160 0.4590 0.4230 0.3670 0.3370 0.3150 0.3080 0.2930 0.2950 ANG –15.7 –29.4 –43.4 –56.6 –68.9 –79.8 –90.1 –101.5 –110.8 –123.9 –136.7 –145.5 –159.1 –164.8 –179.6 S12 S22 MAG ANG MAG ANG MAG ANG 3.5100 3.3520 3.1060 2.8840 2.6050 2.4490 2.2610 2.0780 1.9250 1.8700 1.7790 1.6600 1.5690 1.5190 1.4610 164.8 150.7 138.0 126.3 115.1 105.4 96.8 89.4 83.7 76.3 69.9 64.1 59.4 55.3 50.7 0.0450 0.0780 0.1140 0.1370 0.1490 0.1660 0.1770 0.1780 0.1880 0.1900 0.2110 0.2140 0.2070 0.2140 0.2260 82.6 68.0 62.8 58.0 55.2 45.4 44.8 45.1 42.5 41.9 43.9 41.9 42.8 45.8 45.4 0.9850 0.9410 0.8960 0.8260 0.7830 0.7220 0.6790 0.6430 0.6290 0.5880 0.5630 0.5520 0.5450 0.5220 0.4960 –8.7 –17.1 –23.6 –29.9 –34.7 –38.0 –42.0 –45.2 –46.8 –51.4 –54.3 –57.0 –59.2 –64.5 –61.3 (VCE = 3 V, IC = 3 mA, ZO = 50 Ω) f 4 S21 S11 (GHz) MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.8020 0.6780 0.5440 0.4430 0.3540 0.2930 0.2360 0.2000 0.1820 0.1480 0.1370 0.1340 0.1640 0.1500 0.1780 ANG –25.9 –45.8 –62.8 –75.7 –87.3 –99.7 –108.4 –121.0 –129.5 –151.7 –166.1 175.2 169.7 170.9 147.7 S12 S22 MAG ANG MAG ANG MAG ANG 8.8990 7.4880 6.1260 5.1230 4.3050 3.7880 3.3560 3.0100 2.6960 2.5340 2.3820 2.1870 2.0530 1.9660 1.8710 154.2 134.4 119.6 108.1 99.1 91.3 84.8 79.1 74.4 69.4 64.0 60.0 55.8 53.0 49.6 0.0370 0.0760 0.0860 0.1050 0.1210 0.1330 0.1440 0.1570 0.1760 0.1940 0.2150 0.2130 0.2410 0.2490 0.2750 67.2 65.6 60.9 58.4 55.9 61.2 55.4 56.2 58.0 56.1 56.3 57.8 57.6 55.2 56.6 0.9420 0.8040 0.7060 0.6250 0.5660 0.5190 0.4950 0.4660 0.4560 0.4310 0.4050 0.3990 0.3950 0.3750 0.3740 –15.7 –26.6 –33.2 –36.6 –38.3 –41.4 –43.9 –44.5 –44.5 –48.8 –51.9 –52.8 –52.9 –59.2 –60.8 2SC4959 S–PARAMETER (VCE = 3 V, IC = 5 mA, ZO = 50 Ω) f S21 S11 (GHz) MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.6900 0.5360 0.4010 0.3150 0.2360 0.1850 0.1440 0.1230 0.1040 0.1000 0.1110 0.1040 0.1180 0.1190 0.1490 ANG –33.3 –54.7 –70.0 –82.4 –93.8 –105.4 –115.8 –134.4 –144.6 –170.6 167.4 158.2 156.3 150.0 142.4 S12 S22 MAG ANG MAG ANG MAG ANG 12.2960 9.4300 7.2390 5.8220 4.7830 4.1700 3.6410 3.2380 2.8910 2.7040 2.5330 2.3270 2.1850 2.0910 1.9760 147.1 125.5 111.3 101.1 93.4 86.4 80.7 76.1 71.4 67.3 62.6 58.7 54.9 52.6 49.0 0.0320 0.0610 0.0700 0.0950 0.1090 0.1260 0.1350 0.1560 0.1770 0.1930 0.2080 0.2260 0.2560 0.2560 0.2860 74.8 66.3 59.6 63.8 62.3 61.9 65.9 61.2 62.4 60.7 60.6 61.6 58.2 56.8 56.6 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 –19.7 –30.3 –34.5 –36.7 –38.0 –38.8 –40.4 –42.6 –43.9 –45.8 –50.3 –50.2 –51.2 –58.1 –56.9 (VCE = 3 V, IC = 10 mA, ZO = 50 Ω) f S21 S11 (GHz) MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.5080 0.3410 0.2320 0.1770 0.1220 0.1010 0.0670 0.0620 0.0660 0.0770 0.0990 0.1140 0.1260 0.1020 0.1370 ANG –43.6 –65.3 –80.7 –90.8 –108.2 –121.8 –138.2 –167.6 –171.3 146.7 146.5 128.1 136.8 129.6 123.5 S12 S22 MAG ANG MAG ANG MAG ANG 17.0900 11.3980 8.2250 6.3950 5.1870 4.4390 3.8770 3.4350 3.0650 2.8540 2.6590 2.4400 2.2790 2.1950 2.0800 135.9 114.2 102.0 93.8 87.2 81.6 76.9 72.4 68.8 65.0 60.5 57.0 53.5 50.9 47.9 0.0330 0.0520 0.0690 0.0880 0.1060 0.1260 0.1450 0.1590 0.1790 0.2060 0.2220 0.2420 0.2660 0.2770 0.2860 63.8 68.5 69.0 71.6 69.3 70.1 70.5 65.5 65.0 63.9 62.8 60.9 59.9 59.6 58.3 0.7930 0.5910 0.5130 0.4480 0.4180 0.4030 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 –26.2 –32.9 –32.9 –32.8 –35.9 –33.3 –36.5 –36.2 –39.5 –42.3 –46.6 –48.8 –47.2 –55.1 –51.2 5 2SC4959 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6