NEC UPA806

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA806T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
PACKAGE DRAWINGS
• Low Noise, High Gain
(Unit: mm)
• Operable at Low Voltage
2.1±0.1
• Small Feed-back Capacitance
1.25±0.1
Cre = 0.4 pF TYP.
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA806T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
0.2 –0
6
4
5
1
2
+0.1
µPA806T
0.15 –0
PACKING STYLE
0~0.1
QUANTITY
0.7
PART NUMBER
0.9±0.1
3
1.3
0.65 0.65
ORDERING INFORMATION
X Y
2.0±0.2
+0.1
• Built-in 2 Transistors (2 × 2SC4959)
PIN CONFIGURATION (Top View)
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
6
Q1
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements Note
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
5
4
Q2
1
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3640
(O.D. No. ID-9147)
Date Published April 1995 P
Printed in Japan
©
1995
µPA806T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
DC Current Gain
hFE
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
mANote 1
TYP.
VCE = 3 V, IC = 10 mA, f = 2 GHz
12
Cre
MHzNote 2
0.4
VCE = 3 V, IC = 10 mA, f = 2 GHz
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
hFE1/hFE2
UNIT
0.1
µA
0.1
µA
150
fT
VCB = 3 V, IE = 0, f = 1
MAX.
75
|S21|2
Noise Figure
hFE Ratio
VCE = 3 V, IC = 10
MIN.
7
0.7
pF
8.5
1.5
VCE = 3 V, IC = 10 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
GHz
dB
2.5
dB
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T83
hFE Value
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200
2
Collector Current IC (mA)
Total Power Dissipation PT (mW)
50
El
em
en
ts
Pe
rE
in
lem
t
50
To
ta
en
100
0
l
100
Ambient Temperature TA (°C)
2
VCE = 3 V
Free Air
150
40
30
20
10
0
0.5
Base to Emitter Voltage VBE (V)
1.0
µPA806T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
60
50
400 µA
40
300 µA
30
200 µA
20
IB = 100 µA
DC Current Gain hFE
Collector Current IC (mA)
500 µA
5V
VCE = 3 V
100
10
0
0.1 0.2
0
0.5
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
5V
3V
10
8
VCE = 1 V
6
4
50 100
5V
8
3V
VCE = 1 V
6
4
2
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
0.6
4
Feed-back Capacitance Cre (pF)
f = 2 GHz
VCE = 3 V
Noise Figure NF (dB)
10 20
f = 2 GHz
Collector Current IC (mA)
3
2
1
0
0.5
5
10
f = 2 GHz
12
2
0.5
2
INSERTION GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain l S21e l 2 (dB)
Gain Bandwidth Product fT (GHz)
14
1
Collector Current IC (mA)
1
2
5
10
Collector Current IC (mA)
20
50
f = 1 MHz
0.5
0.4
0.3
0.2
0.5
1
2
5
10
20
Collector to Base Voltage VCB (V)
3
µPA806T
S-PARAMETERS
V CE = 3 V, I C = 1 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.9340
0.9040
0.8150
0.7530
0.6540
0.5900
0.5160
0.4590
0.4230
0.3670
0.3370
0.3150
0.3080
0.2930
0.2950
S21
ANG
–15.7
–29.4
–43.4
–56.6
–68.9
–79.8
–90.1
–101.5
–110.8
–123.9
–136.7
–145.5
–159.1
–164.8
–179.6
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
3.5100
3.3520
3.1060
2.8840
2.6050
2.4490
2.2610
2.0780
1.9250
1.8700
1.7790
1.6600
1.5690
1.5190
1.4610
164.8
150.7
138.0
126.3
115.1
105.4
96.8
89.4
83.7
76.3
69.9
64.1
59.4
55.3
50.7
0.0450
0.0780
0.1140
0.1370
0.1490
0.1660
0.1770
0.1780
0.1880
0.1900
0.2110
0.2140
0.2070
0.2140
0.2260
82.6
68.0
62.8
58.0
55.2
45.4
44.8
45.1
42.5
41.9
43.9
41.9
42.8
45.8
45.4
0.9850
0.9410
0.8960
0.8260
0.7830
0.7220
0.6790
0.6430
0.6290
0.5880
0.5630
0.5520
0.5450
0.5220
0.4960
–8.7
–17.1
–23.6
–29.9
–34.7
–38.0
–42.0
–45.2
–46.8
–51.4
–54.3
–57.0
–59.2
–64.5
–61.3
MAG
ANG
MAG
ANG
MAG
ANG
8.8990
7.4880
6.1260
5.1230
4.3050
3.7880
3.3560
3.0100
2.6960
2.5340
2.3820
2.1870
2.0530
1.9660
1.8710
154.2
134.4
119.6
108.1
99.1
91.3
84.8
79.1
74.4
69.4
64.0
60.0
55.8
53.0
49.6
0.0370
0.0760
0.0860
0.1050
0.1210
0.1330
0.1440
0.1570
0.1760
0.1940
0.2150
0.2130
0.2410
0.2490
0.2750
67.2
65.6
60.9
58.4
55.9
61.2
55.4
56.2
58.0
56.1
56.3
57.8
57.6
55.2
56.6
0.9420
0.8040
0.7060
0.6250
0.5660
0.5190
0.4950
0.4660
0.4560
0.4310
0.4050
0.3990
0.3950
0.3750
0.3740
–15.7
–26.6
–33.2
–36.6
–38.3
–41.4
–43.9
–44.5
–44.5
–48.8
–51.9
–52.8
–52.9
–59.2
–60.8
V CE = 3 V, I C = 3 mA, Z O = 50 Ω
f
4
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8020
0.6780
0.5440
0.4430
0.3540
0.2930
0.2360
0.2000
0.1820
0.1480
0.1370
0.1340
0.1640
0.1500
0.1780
S21
ANG
–25.9
–45.8
–62.8
–75.7
–87.3
–99.7
–108.4
–121.0
–129.5
–151.7
–166.1
175.2
169.7
170.9
147.7
S12
S22
µPA806T
S-PARAMETERS
V CE = 3 V, I C = 5 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.6900
0.5360
0.4010
0.3150
0.2360
0.1850
0.1440
0.1230
0.1040
0.1000
0.1110
0.1040
0.1180
0.1190
0.1490
S21
ANG
–33.3
–54.7
–70.0
–82.4
–93.8
–105.4
–115.8
–134.4
–144.6
–170.6
167.4
158.2
156.3
150.0
142.4
MAG
12.2960
9.4300
7.2390
5.8220
4.7830
4.1700
3.6410
3.2380
2.8910
2.7040
2.5330
2.3270
2.1850
2.0910
1.9760
S12
S22
ANG
MAG
ANG
MAG
ANG
147.1
125.5
111.3
101.1
93.4
86.4
80.7
76.1
71.4
67.3
62.6
58.7
54.9
52.6
49.0
0.0320
0.0610
0.0700
0.0950
0.1090
0.1260
0.1350
0.1560
0.1770
0.1930
0.2080
0.2260
0.2560
0.2560
0.2860
74.8
66.3
59.6
63.8
62.3
61.9
65.9
61.2
62.4
60.7
60.6
61.6
58.2
56.8
56.6
0.8850
0.7210
0.6030
0.5230
0.4870
0.4600
0.4360
0.4170
0.4020
0.3940
0.3710
0.3500
0.3560
0.3520
0.3410
–19.7
–30.3
–34.5
–36.7
–38.0
–38.8
–40.4
–42.6
–43.9
–45.8
–50.3
–50.2
–51.2
–58.1
–56.9
ANG
MAG
ANG
MAG
ANG
135.9
114.2
102.0
93.8
87.2
81.6
76.9
72.4
68.8
65.0
60.5
57.0
53.5
50.9
47.9
0.0330
0.0520
0.0690
0.0880
0.1060
0.1260
0.1450
0.1590
0.1790
0.2060
0.2220
0.2420
0.2660
0.2770
0.2860
63.8
68.5
69.0
71.6
69.3
70.1
70.5
65.5
65.0
63.9
62.8
60.9
59.9
59.6
58.3
0.7930
0.5910
0.5130
0.4480
0.4180
0.4030
0.3930
0.3680
0.3610
0.3480
0.3360
0.3370
0.3170
0.3280
0.3100
–26.2
–32.9
–32.9
–32.8
–35.9
–33.3
–36.5
–36.2
–39.5
–42.3
–46.6
–48.8
–47.2
–55.1
–51.2
V CE = 3 V, I C = 10 mA, Z O = 50 Ω
f
S11
GHz
MAG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.5080
0.3410
0.2320
0.1770
0.1220
0.1010
0.0670
0.0620
0.0660
0.0770
0.0990
0.1140
0.1260
0.1020
0.1370
S21
ANG
–43.6
–65.3
–80.7
–90.8
–108.2
–121.8
–138.2
–167.6
–171.3
146.7
146.5
128.1
136.8
129.6
123.5
MAG
17.0900
11.3980
8.2250
6.3950
5.1870
4.4390
3.8770
3.4350
3.0650
2.8540
2.6590
2.4400
2.2790
2.1950
2.0800
S12
S22
5
µPA806T
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
6