PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.1±0.1 FEATURES 1.25±0.1 6 4 • A Mini Mold Package Adopted 5 1 2 3 1.3 0.65 0.65 |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA X Y 2.0±0.2 NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain 0.2 –0 +0.1 • Low Noise PART NUMBER QUANTITY PACKING STYLE µPA800T Loose products (50 PCS) Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA800T-T1 +0.1 0.15 –0 0~0.1 ORDERING INFORMATION 0.7 0.9±0.1 • Built-in 2 Transistors (2 × 2SC4228) PIN CONFIGURATION (Top View) Taping products (3 KPCS/Reel) 6 Q1 5 Remark If you require an evaluation sample, please contact an NEC 4 Q2 Sales Representative. (Unit sample quantity is 50 pcs.) 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 150 in 1 element 200 in 2 elements Note mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1) Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3634 (O.D. No. ID-9141) Date Published April 1995 P Printed in Japan © 1995 µPA800T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 1.0 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 1.0 µA DC Current Gain hFE Gain Bandwidth Product VCE = 3 V, IC = 5 fT Feed-back Capacitance mANote 1 80 VCE = 3 V, IC = 5 mA Cre VCB = 3 V, IE = 0, f = 1 200 5.5 80 GHz MHzNote 2 0.7 pF Insertion Power Gain (1) |S21e|2 VCE = 1 V, IC = 3 mA, f = 2 GHz 4.5 6.5 dB Insertion Power Gain (2) |S21e|2 VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.9 3.2 dB Noise Figure (2) NF VCE = 3 V, IC = 5 mA, f = 2 GHz 1.9 3.2 dB Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking RL hFE Value 80 to 200 TYPICAL CHARACTERISTICS (TA = 25 °C) PT - TA Characteristics IC - VCE Characteristics 160 µ Free Air 200 2 Collector Current IC (mA) Total Power Dissipation PT (mW) 25 El em en ts Pe rE 100 in To ta lem en l t 0 50 100 20 A 140 µ A µ 120 100 µ A 15 80 µ A 10 60 µ A 40 µ A IB = 20 µ A 5 0 150 Ambient Temperature TA (°C) 5 IC - VBE Characteristics hFE - IC Characteristics 200 DC Current Gain hFE Collector Current IC (mA) VCE = 3 V 10 0.5 Base to Emitter Voltage VBE (V) 2 1.0 Collector to Emitter Voltage VCE (V) 20 0 A 1.0 VCE = 3 V 100 50 20 10 0.5 1 5 10 Collector Current IC (mA) 50 µPA800T Cre - VCB Characteristics fT - IC Characteristics 10 Gain Bandwidth Product fT (GHz) Feed-back Capacitance Cre (pF) 5.0 f = 1 MHz 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 VCE = 3 V f = 2 GHz 8 6 4 2 0 0.5 50 Collector to Base Voltage VCB (V) l S21e l 2 - IC Characteristics 10 50 | S21e | 2 - f Characteristics 25 VCE = 3 V f = 2 GHz Insertion Power Gain | S21e | 2 (dB) Insertion Power Gain | S21e | 2 (dB) 5 Collector Current IC (mA) 12 8 4 0 0.5 1 1 5 10 50 Collector Current IC (mA) VCE = 3 V IC = 5 mA 20 15 10 5 0 0.1 0.5 1.0 2.0 5.0 Frequency f (GHz) NF - IC Characteristics 5 VCE = 3 V f = 2 GHz Noise Figure (dB) 4 3 2 1 0 0.5 1 5 10 50 Collector Current IC (mA) 3 µPA800T S-PARAMETERS V CE = 3 V, I C = 5 mA, Z O = 50 Ω FREQUENCY MHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 .875 .762 .677 .565 .495 .425 .372 .327 .289 .255 .236 .214 .195 .182 .165 .153 .145 .139 .134 .129 –18.6 –35.0 –47.2 –59.4 –67.5 –76.1 –81.6 –88.5 –93.6 –100.5 –105.2 –112.2 –117.6 –123.8 –129.9 –137.4 –144.3 –151.8 –157.0 –164.7 14.087 12.290 10.888 9.275 8.300 7.184 6.454 5.818 5.231 4.820 4.444 4.142 3.842 3.554 3.343 3.218 3.091 2.857 2.764 2.624 161.1 145.1 133.6 123.6 115.7 108.9 104.8 99.5 95.5 92.0 88.8 85.3 83.2 79.3 77.4 75.3 73.6 70.4 68.7 66.4 .018 .034 .048 .055 .063 .074 .084 .089 .092 .104 .105 .113 .122 .127 .139 .140 .152 .162 .168 .176 78.2 68.6 66.6 65.8 63.5 61.1 63.8 62.7 64.6 62.8 64.2 64.2 63.6 65.0 64.1 64.5 65.4 64.3 62.3 64.8 .958 .888 .800 .719 .669 .610 .600 .560 .543 .519 .512 .497 .476 .481 .467 .466 .458 .456 .451 .445 –10.1 –17.7 –24.4 –26.7 –28.7 –30.3 –30.6 –31.3 –30.1 –33.4 –31.8 –33.4 –33.2 –34.2 –34.6 –34.8 –37.2 –36.1 –38.4 –39.0 V CE = 3 V, I C = 3 mA, Z O = 50 Ω FREQUENCY MHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 .943 .868 .815 .717 .655 .577 .518 .468 .420 .380 .344 .321 .291 .273 .250 .228 .219 .199 .193 .182 –13.4 –26.6 –37.7 –48.9 –56.8 –65.5 –71.2 –78.1 –83.7 –90.6 –94.8 –101.6 –105.9 –111.7 –117.2 –122.4 –128.5 –135.3 –139.6 –146.9 9.384 8.668 8.165 7.279 6.780 6.061 5.504 5.074 4.632 4.340 3.951 3.717 3.485 3.306 3.134 2.959 2.819 2.699 2.572 2.474 165.9 152.8 142.9 132.9 125.5 118.0 112.8 106.7 102.8 98.3 94.8 90.5 87.6 84.3 80.7 79.0 76.0 73.9 71.9 68.3 .020 .038 .051 .062 .075 .084 .091 .098 .102 .105 .112 .121 .128 .135 .140 .145 .153 .161 .163 .175 84.1 77.2 67.9 63.9 63.9 60.0 59.7 57.0 59.0 56.6 57.8 59.0 58.7 59.8 58.0 59.5 59.0 58.4 60.3 59.8 .969 .936 .876 .804 .764 .708 .685 .639 .611 .592 .579 .551 .532 .535 .511 .516 .504 .493 .489 .482 –7.7 –13.8 –20.9 –23.5 –26.7 –29.7 –31.1 –32.0 –32.8 –35.0 –34.1 –35.0 –35.9 –36.6 –37.5 –37.7 –39.0 –39.9 –41.4 –41.4 ANG 172.1 163.3 157.3 149.1 143.3 135.7 131.1 124.4 119.2 114.1 109.3 104.8 101.1 96.0 92.1 88.8 85.5 82.2 78.9 75.5 MAG .025 .039 .061 .075 .093 .105 .113 .128 .134 .146 .146 .155 .155 .160 .168 .165 .176 .173 .174 .173 ANG 86.4 79.3 74.6 70.7 66.4 62.2 61.7 55.7 55.6 53.7 50.3 49.8 46.2 46.7 43.6 45.5 45.3 43.8 43.5 43.7 MAG .995 .986 .976 .936 .922 .885 .880 .846 .808 .790 .766 .741 .714 .708 .685 .676 .667 .649 .633 .630 V CE = 3 V, I C = 1 mA, Z O = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 4 S11 MAG 1.023 .983 .975 .922 .899 .849 .812 .774 .727 .680 .651 .616 .575 .546 .512 .481 .463 .440 .419 .394 S21 ANG –7.6 –16.1 –22.4 –31.8 –36.9 –44.7 –50.6 –57.1 –62.9 –69.3 –74.1 –79.8 –85.2 –90.6 –95.8 –100.6 –106.3 –111.8 –116.4 –121.2 MAG 3.505 3.400 3.368 3.219 3.186 3.046 2.905 2.830 2.694 2.597 2.479 2.392 2.302 2.207 2.110 2.034 1.989 1.903 1.854 1.779 S12 S22 ANG –4.6 –7.8 –12.8 –15.1 –18.8 –22.5 –24.4 –27.2 –28.8 –31.8 –32.8 –34.9 –35.9 –36.8 –38.4 –40.1 –41.8 –42.3 –44.2 –45.2 µPA800T [MEMO] 5 µPA800T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6