NEC 2SJ647

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
PACKAGE
2SJ647
SC-70 (SSP)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
ID(DC)
m0.4
A
ID(pulse)
m1.6
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note2
0.15 +0.1
–0.05
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Total Power Dissipation
3
0.3
Remark Marking: H22
Drain Current (pulse)
1
0 to 0.1
PART NUMBER
Note1
2
0.9 ± 0.1
ORDERING INFORMATION
Drain Current (DC) (TA = 25°C)
0.65
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
1.25 ± 0.1
0.65
2.0 ± 0.2
FEATURES
2.1 ± 0.1
0.3 +0.1
–0
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0.3 +0.1
–0
DESCRIPTION
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on FR-4 board of 2500 mm x 1.1 mm.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D16530EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003
2SJ647
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −20 V, VGS = 0 V
−1.0
µA
Gate Leakage Current
IGSS
VGS = m12 V, VDS = 0 V
m10
µA
−1.8
V
Gate Cut-off Voltage
VDS = −10 V, ID = −1.0 mA
−0.8
−1.3
| yfs |
VDS = −10 V, ID = −0.2 A
0.2
0.6
RDS(on)1
VGS = −4.5 V, ID = −0.2 A
1.17
1.45
Ω
RDS(on)2
VGS = −4.0 V, ID = −0.2 A
1.25
1.55
Ω
RDS(on)3
VGS = −2.5 V, ID = −0.15 A
2.25
2.98
Ω
VGS(off)
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
29
pF
Output Capacitance
Coss
VGS = 0 V
15
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
3
pF
Turn-on Delay Time
td(on)
VDD = −10 V, ID = −0.2 A
23
ns
VGS = −4.0 V
39
ns
RG = 10 Ω
50
ns
33
ns
0.93
V
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Body Diode Forward Voltage
VF(S-D)
IF = 0.4 A, VGS = 0 V
TEST CIRCUIT SWITCHING TIME
VGS(−)
D.U.T.
VGS
RL
RG
PG.
Wave Form
0
VGS
10%
90%
VDS(−)
VDD
90%
90%
VDS
VDS
VGS (−)
0
Wave Form
10%
0
td(on)
τ
tr
ton
10%
td(off)
tf
toff
τ = 1 µs
Duty Cycle ≤ 1%
2
Data Sheet D16530EJ1V0DS
2SJ647
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.24
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0.2
0.16
0.12
0.08
Mounted on FR-4 board of
2
2500 mm x 1.1 mm
0.04
0
0
0
25
50
75
100
125
150
0
175
25
TA - Ambient Temperature - °C
100
125
150
175
FORWARD TRANSFER CHARACTERISTICS
-1.6
-10
VDS = −10 V
Pulsed
Pulsed
−4.0 V
-1
ID - Drain Current - A
ID - Drain Current - A
75
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −4.5 V
50
-1.2
-0.8
-0.1
T A = 125°C
75°C
25°C
−25°C
-0.01
-0.4
−2.5 V
-0.001
0
-0.0001
0
-1
-2
-3
-4
-5
0
-1
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
VDS = −10 V
ID = −1.0 mA
-1.4
-1.2
-1
-0.8
-0.6
-50
0
50
100
-3
-4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
-1.6
-2
VGS - Gate to Source Voltage - V
150
Tch – Channel Temperrature - °C
VDS = −10 V
Pulsed
1
T A = −25°C
25°C
75°C
125°C
0.1
0.01
-0.001
-0.01
-0.1
-1
-10
ID - Drain Current - A
Data Sheet D16530EJ1V0DS
3
2SJ647
4
Pulsed
VGS = −2.5 V, ID = −0.15 A
3
2
1
VGS = −4.0 V, ID = −0.2 A
VGS = −4.5 V, ID = −0.2 A
0
-50
0
50
100
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
ID = −0.2 A
Pulsed
3
2
1
0
0
-2
Tch – Channel Temperrature - °C
4
VGS = −4.5 V
Pulsed
3
TA = 125°C
75°C
25°C
−25°C
1
0
-0.01
-0.1
-1
-10
4
TA = 125°C
75°C
2
1
25°C
−25°C
0
-0.01
-0.1
Ciss, Coss, Crss - Capacitance – pF
RDS(on) - Drain to Source On-state Resistance - mΩ
100
75°C
25°C
−25°C
-0.1
-1
-10
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
-10
ID - Drain Current - A
4
-1
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = −2.5 V
Pulsed
2
0
-0.01
-12
ID - Drain Current - A
TA = 125°C
1
-10
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
3
-8
VGS = −4.0 V
Pulsed
ID - Drain Current - A
4
-6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2
-4
VGS - Gate to Source Voltage - V
Crss
1
-0.1
-1
-10
VDS - Drain to Source Voltage - V
Data Sheet D16530EJ1V0DS
-100
2SJ647
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
VGS = 0 V
Pulsed
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
IF – Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time – ns
1000
100
tr
td(off)
tf
td(on)
10
-0.01
1
0.1
0.01
0.001
-0.1
-1
-10
ID - Drain Current – A
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D16530EJ1V0DS
5
2SJ647
• The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
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M8E 02. 11-1