DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) PACKAGE 2SJ647 SC-70 (SSP) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V ID(DC) m0.4 A ID(pulse) m1.6 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note2 0.15 +0.1 –0.05 Marking 1 : Source 2 : Gate 3 : Drain EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Total Power Dissipation 3 0.3 Remark Marking: H22 Drain Current (pulse) 1 0 to 0.1 PART NUMBER Note1 2 0.9 ± 0.1 ORDERING INFORMATION Drain Current (DC) (TA = 25°C) 0.65 • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 1.25 ± 0.1 0.65 2.0 ± 0.2 FEATURES 2.1 ± 0.1 0.3 +0.1 –0 The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.3 +0.1 –0 DESCRIPTION Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16530EJ1V0DS00 (1st edition) Date Published January 2003 NS CP(K) Printed in Japan 2003 2SJ647 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1.0 µA Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m10 µA −1.8 V Gate Cut-off Voltage VDS = −10 V, ID = −1.0 mA −0.8 −1.3 | yfs | VDS = −10 V, ID = −0.2 A 0.2 0.6 RDS(on)1 VGS = −4.5 V, ID = −0.2 A 1.17 1.45 Ω RDS(on)2 VGS = −4.0 V, ID = −0.2 A 1.25 1.55 Ω RDS(on)3 VGS = −2.5 V, ID = −0.15 A 2.25 2.98 Ω VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 29 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 3 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −0.2 A 23 ns VGS = −4.0 V 39 ns RG = 10 Ω 50 ns 33 ns 0.93 V Rise Time tr Turn-off Delay Time td(off) Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.4 A, VGS = 0 V TEST CIRCUIT SWITCHING TIME VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% 90% VDS(−) VDD 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 Data Sheet D16530EJ1V0DS 2SJ647 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.24 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0.2 0.16 0.12 0.08 Mounted on FR-4 board of 2 2500 mm x 1.1 mm 0.04 0 0 0 25 50 75 100 125 150 0 175 25 TA - Ambient Temperature - °C 100 125 150 175 FORWARD TRANSFER CHARACTERISTICS -1.6 -10 VDS = −10 V Pulsed Pulsed −4.0 V -1 ID - Drain Current - A ID - Drain Current - A 75 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = −4.5 V 50 -1.2 -0.8 -0.1 T A = 125°C 75°C 25°C −25°C -0.01 -0.4 −2.5 V -0.001 0 -0.0001 0 -1 -2 -3 -4 -5 0 -1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 10 VDS = −10 V ID = −1.0 mA -1.4 -1.2 -1 -0.8 -0.6 -50 0 50 100 -3 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V -1.6 -2 VGS - Gate to Source Voltage - V 150 Tch – Channel Temperrature - °C VDS = −10 V Pulsed 1 T A = −25°C 25°C 75°C 125°C 0.1 0.01 -0.001 -0.01 -0.1 -1 -10 ID - Drain Current - A Data Sheet D16530EJ1V0DS 3 2SJ647 4 Pulsed VGS = −2.5 V, ID = −0.15 A 3 2 1 VGS = −4.0 V, ID = −0.2 A VGS = −4.5 V, ID = −0.2 A 0 -50 0 50 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4 RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = −0.2 A Pulsed 3 2 1 0 0 -2 Tch – Channel Temperrature - °C 4 VGS = −4.5 V Pulsed 3 TA = 125°C 75°C 25°C −25°C 1 0 -0.01 -0.1 -1 -10 4 TA = 125°C 75°C 2 1 25°C −25°C 0 -0.01 -0.1 Ciss, Coss, Crss - Capacitance – pF RDS(on) - Drain to Source On-state Resistance - mΩ 100 75°C 25°C −25°C -0.1 -1 -10 VGS = 0 V f = 1.0 MHz Ciss Coss 10 -10 ID - Drain Current - A 4 -1 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = −2.5 V Pulsed 2 0 -0.01 -12 ID - Drain Current - A TA = 125°C 1 -10 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3 -8 VGS = −4.0 V Pulsed ID - Drain Current - A 4 -6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 -4 VGS - Gate to Source Voltage - V Crss 1 -0.1 -1 -10 VDS - Drain to Source Voltage - V Data Sheet D16530EJ1V0DS -100 2SJ647 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VGS = 0 V Pulsed VDD = −10 V VGS = −4.0 V RG = 10 Ω IF – Diode Forward Current - A td(on), tr, td(off), tf - Switching Time – ns 1000 100 tr td(off) tf td(on) 10 -0.01 1 0.1 0.01 0.001 -0.1 -1 -10 ID - Drain Current – A 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet D16530EJ1V0DS 5 2SJ647 • The information in this document is current as of January, 2003. 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