DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 0.8 ± 0.1 1.6 ± 0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 3 0 to 0.1 2 1 0.2 0.5 +0.1 –0 1.0 1.6 ± 0.1 PACKAGE 2SJ648 SC-75 (USM) 0.75 ± 0.05 1: Source 2: Gate 3: Drain ORDERING INFORMATION PART NUMBER 0.6 0.5 Marking: H1 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) ID(DC) m0.4 A ID(pulse) m1.6 A PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 300 mm x 0.64 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16597EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2003 2SJ648 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1.0 µA Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m10 µA −1.8 V Gate Cut-off Voltage Forward Transfer Admittance VDS = −10 V, ID = −1.0 mA −0.8 −1.3 | yfs | VDS = −10 V, ID = −0.2 A 0.2 0.6 RDS(on)1 VGS = −4.5 V, ID = −0.2 A 1.17 1.45 Ω RDS(on)2 VGS = −4.0 V, ID = −0.2 A 1.25 1.55 Ω RDS(on)3 VGS = −2.5 V, ID = −0.15 A 2.25 2.98 Ω VGS(off) Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = –10 V 29 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1 MHz 3.0 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −0.2 A 23 ns VGS = −4.0 V 39 ns RG = 10 Ω 50 ns 33 ns 0.93 V Rise Time tr Turn-off Delay Time td(off) Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.4 A, VGS = 0 V Note Pulsed PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT SWITCHING TIME VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% 90% VDS(−) VDD 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 Data Sheet D16597EJ2V0DS 2SJ648 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 1.6 240 Pulsed Mounted on ceramic substrate of 2 300 mm × 0.64 mm 200 ID - Drain Current - A PT - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 160 120 80 - 0.8 - 0.4 −2.5 V 40 0 0 25 50 75 100 125 150 0 175 0 -1 TA - Ambient Temperature - °C -4 -5 - 1.6 VGS(off) - Gate Cut-off Voltage - V V D S = −10 V Pulsed ID - Drain Current - A -3 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 10 -1 - 0.1 T A = 125°C 75°C 25°C −25°C - 0.01 - 0.001 - 0.0001 0 -1 -2 -3 V DS = −10 V ID = −1.0 mA - 1.4 - 1.2 -1 - 0.8 - 0.6 - 50 -4 0 TA = −25°C 25°C 75°C 125°C 0.1 - 0.01 - 0.1 -1 - 10 RDS(on) - Drain to Source On-state Resistance - Ω VDS = −10 V Pulsed 0.01 - 0.001 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 50 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 10 -2 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS | yfs | - Forward Transfer Admittance - S −4.0 V V GS = −4.5 V - 1.2 4 Pulsed 3 VGS = −2.5 V, ID = −0.15 A 2 1 VGS = −4.0 V, ID = −0.20 A VGS = −4.5 V, ID = −0.20 A 0 - 50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D16597EJ2V0DS 3 2SJ648 4 ID = −0.20 A Pulsed 3 2 1 0 0 -2 -4 -6 -8 - 10 - 12 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS = −4.5 V Pulsed 3 T A = 125°C 75°C 2 1 25°C −25°C 0 - 0.01 - 0.1 VGS - Gate to Source Voltage - V VGS = −4.0 V Pulsed 3 TA = 125°C 75°C 2 1 25°C −25°C 0 - 0.01 - 0.1 -1 - 10 4 VGS = −2.5 V Pulsed T A = 125°C 75°C 3 2 25°C 1 0 - 0.01 ID - Drain Current - A −25°C - 0.1 - 10 SWITCHING CHARACTERISTICS 100 1000 td(on), tr, td(off), tf - Switching Time - ns V GS = 0 V f = 1.0 MHz Ciss, Coss, Crss - Capacitance - pF -1 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss C oss 10 C rss 1 - 0.1 -1 - 10 V DD = −10 V V GS = −4.0 V R G = 10 Ω 100 - 100 VDS - Drain to Source Voltage - V 4 - 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 -1 ID - Drain Current - A tr td(off) tf td(on) 10 - 0.01 - 0.1 -1 ID - Drain Current - A Data Sheet D16597EJ2V0DS - 10 2SJ648 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 IF - Diode Forward Current - A V GS = 0 V Pulsed 1 0.1 0.01 0.001 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet D16597EJ2V0DS 5 2SJ648 • The information in this document is current as of November, 2004. 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