DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA622TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 2.0 ±0.2 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) 5 4 1 2 3 1.6 6 0 to 0.05 0.65 S +0.1 0.15 −0.05 0.65 2.1 ±0.1 FEATURES PACKAGE DRAWING (Unit: mm) 0.25 ±0.1 The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.8 MAX. ORDERING INFORMATION PART NUMBER PACKAGE µPA622TT-E1-A 6 pin WSOF (1620) 1, 2, 5, 6: Drain 3 : Gate 4 : Source 0.05 S 0.4 ±0.1 µPA622TT-E2-A Remark "-A" indicates Pb-free (This product does not contain Pb in external electrode and other parts.). "-E1" or "-E2" indicates the unit orientation. (8 mm embossed carrier tape, 3000 pcs/reel) +0.1 Marking: WC 0.2 −0.05 0.1 M S ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 VGSS ±20 Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) ID(DC) ±3.0 Note2 Drain Current (pulse) ID(pulse) ±12 0.2 Total Power Dissipation PT1 Note1 Total Power Dissipation PT2 1.3 150 Channel Temperature Tch –55 to +150 Storage Temperature Tstg 2 Notes 1. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 2. PW ≤ 10 µs, Duty Cycle ≤ 1% V V A A W W °C °C EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16113EJ2V0DS00 (2nd edition) Date Published May 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 µPA622TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 1.5 A 0.5 2.1 RDS(on)1 VGS = 10 V, ID = 1.5 A 65 82 mΩ RDS(on)2 VGS = 4.5 V, ID = 1.0 A 90 120 mΩ RDS(on)3 VGS = 4.0 V, ID = 1.0 A 104 139 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 155 pF Output Capacitance Coss VGS = 0 V 45 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 27 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 1.5 A 10 ns tr VGS = 10 V 28 ns td(off) RG = 10 Ω 75 ns 50 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 3.8 nC Gate to Source Charge QGS VGS = 10 V 0.7 nC QGD ID = 3.0 A 1.3 nC IF = 3.0 A, VGS = 0 V 0.90 V Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet G16113EJ2V0DS µPA622TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 1.4 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.2 1 0.8 0.6 0.4 0.2 0 Mounted on FR-4 board of 2 5000 m m x 1.1 m m , t ≤ 5 sec. 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA R DS(on) Limited (V GS = 10 V) ID(pulse) 10 PW = 1 ms 1 ID(DC) 10 ms 0.1 0.01 100 ms Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 0.1 1 5s 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16113EJ2V0DS 3 µPA622TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 10 12 VDS = 10 V P u ls e d Pulsed V GS = 10 V 1 ID - Drain Current - A ID - Drain Current - A 10 8 6 4 4.5 V 4.0 V 2 0 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C 0 .1 0 .0 1 0 .0 0 1 0 .0 0 0 1 0 0.2 0.4 0.6 0.8 1 1.2 1 1 .5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V DS = 10 V ID = 1.0 m A 2.2 2 1.8 1.6 1.4 50 100 150 10 Pulsed V GS = 4.0 V, ID = 1.0 A V GS = 4.5 V, ID = 1.0 A 100 50 V G S = 10 V, I D = 1.5 A 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 200 0 Tch - Channel Temperature - °C 4 4 1 T A = −25°C 25°C 75°C 125°C 0.1 0.01 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -50 3 .5 V D S = 10 V Pulsed Tch - Channel Temperature - °C 150 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.4 0 2 .5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 100 ID = 1.5 A 50 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet G16113EJ2V0DS 20 200 V GS = 10 V Pulsed 150 T A = 125°C 100 75°C 25°C − 25°C 50 0 0.01 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = 4.5 V Pulsed 150 T A = 125°C 75°C 100 25°C − 25°C 50 0 0.01 0.1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 1000 200 V G S = 4.0 V Pulsed 150 T A = 125°C 75°C 25°C 100 − 25°C 50 0 0.01 VDD = 15 V VGS = 10 V R G = 10 Ω 100 t d ( o f f) tf tr 10 td (o n ) 1 0.1 1 10 0 .1 100 1 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 P ulse d VGS = 0 V f = 1 .0 M H z C is s 100 C oss C rs s IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF 1 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA622TT 10 VGS = 0 V 1 0.1 0 .0 1 10 0 .4 0 .1 1 10 100 VDS - Drain to Source Voltage - V Data Sheet G16113EJ2V0DS 0 .6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V 5 µPA622TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 VGS - Gate to Source Voltage - V I D = 3 .0 A 12 V D D = 6 .0 V 15 V 24 V 10 8 6 4 2 0 0 1 2 3 4 QG - Gate Charge - nC 6 Data Sheet G16113EJ2V0DS µPA622TT • The information in this document is current as of May, 2005. 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