DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The µ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. +0.1 FEATURES • • • • Two MOS FET circuits in package the same size as SC-70 Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current • Since bias resistance can be omitted, the number of components required can be reduced 1.25 ±0.1 2.1 ±0.1 0.2 -0 +0.1 0.15 -0.05 6 5 4 1 2 3 0 to 0.1 0.65 0.7 0.65 0.9 ±0.1 1.3 2.0 ±0.2 PIN CONNECTION ORDERING INFORMATION 6 PART NUMBER µ PA675T 5 4 PACKAGE Note SC-88 (SSP) 1. 2. 3. 4. 5. 6. Note Marking: SA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 16 V Gate to Source Voltage (VDS = 0 V) VGSS ±7.0 V Drain Current (DC) (Tc = 25°C) ID(DC) ±0.1 A ID(pulse) ±0.2 A PT 0.2 W Drain Current (pulse) Note Total Power Dissipation (TC = 25°C) Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C 1 2 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 (S1) (G1) (D2) (S2) (G2) (D1) 3 Note PW ≤ 10 ms, Duty Cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15454EJ1V0DS00 (1st edition) Date Published May 2001 NS CP(K) Printed in Japan © 2001 µ PA675T ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V ±3.0 µA 1.1 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 3 V, ID = 10 µA 0.5 | yfs | VDS = 3 V, ID = 10 mA 20 RDS(on)1 VGS = 1.5 V, ID = 1 mA 20 50 Ω RDS(on)2 VGS = 2.5 V, ID = 10 mA 7 15 Ω RDS(on)3 VGS = 4.0 V, ID = 10 mA 5 12 Ω 0.8 mS Input Capacitance Ciss VDS = 3 V 10 pF Output Capacitance Coss VGS = 0 V 13 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time td(on) VDD = 3 V, ID = 10 mA 15 ns tr VGS = 3 V 70 ns td(off) RG = 10 Ω 100 ns 110 ns Rise Time Turn-off Delay Time Fall Time tf SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS DUT RL VDD PG. Drain Current Waveform τ VGS 0 VGS 90% 90% ID 10% 10% 0 td(on) tr ton τ = 1 µs Duty Cycle ≤ 1% 2 Data Sheet G15454EJ1V0DS 90% 10% ID RG VGS 0 Gate Voltage Waveform td(off) tf toff µ PA675T TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 VGS = 2.0 V Free air 250 40 ID - Drain Current - mA PT - Total Power Dissipation - mW 300 200 150 Pe To ro ne ta l un it 100 50 1.8 V 30 20 1.6 V 10 1.4 V 1.2 V 0 25 50 75 100 125 150 1 2 3 4 VDS - Drain to Source Voltage - V 0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 3 V 200 TA = –25˚C 25˚C 75˚C 100 50 20 10 RDS(on) - Drain to Source On-state Resistance - Ω 5 10 20 50 100 ID - Drain Current - mA 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 25˚C 100 50 20 VGS = 1.5 V 10 2.5 V 4.0 V 5 0.5 1 2 5 10 20 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = –25˚C 100 50 VGS = 1.5 V 20 10 2.5 V 5 4.0 V 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA 50 100 200 500 RDS(on) - Drain to Source On-state Resistance - Ω |yfs| - Forward Transfer Admittance - mS 500 RDS(on) - Drain to Source On-state Resistance - Ω TC - Ambient Temperature - ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75˚C 100 50 20 VGS = 1.5 V 10 2.5 V 4.0 V 5 ID - Drain Current - mA 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA Data Sheet G15454EJ1V0DS 3 30 TA = –25˚C ID = 10 mA 20 1 mA 10 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 0 7 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 25˚C ID = 10 mA 20 1 mA 10 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 0 200 30 TA = 75˚C 20 ID = 10 mA 1 mA 10 100 50 20 10 5 2 1 0 2 3 4 5 6 1 VGS - Gate to Source Voltage - V 7 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF 500 VGS = 0 V f = 1 MHz 20 10 Ciss Coss 5 2 1 0.5 Crss 1 2 5 10 20 VDS - Drain to Source Voltage - V 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0 SWITCHING CHARACTERISTICS 50 4 7 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ISD - Diode Forward Current - mA RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω µ PA675T 50 VDD = 3 V VGS = 3 V tr 200 100 tf 50 td(on) 20 10 Data Sheet G15454EJ1V0DS td(off) 20 50 100 200 ID - Drain Current - mA 500 µ PA675T [MEMO] Data Sheet G15454EJ1V0DS 5 µ PA675T [MEMO] 6 Data Sheet G15454EJ1V0DS µ PA675T [MEMO] Data Sheet G15454EJ1V0DS 7 µ PA675T • The information in this document is current as of May, 2001. 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