DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S 1. Source 2. Drain 3. Gate 2 1.5 5.5 ± 0.4 1 1.8 MIN. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1109 SC-59 (MM) 3 2.9 ± 0.2 1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note VDSX 20 V VGDO –20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 80 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage EQUIVALENT CIRCUIT Drain Gate Source Note VGS = –1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15940EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 2SK1109 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS IDSS MIN. VDS = 5.0 V, VGS = 0 V TYP. MAX. UNIT 40 600 µA −1.0 V Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA −0.1 Forward Transfer Admittance | yfs1 | VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 350 µS Forward Transfer Admittance | yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350 µS Input Capacitance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF Noise Voltage NV See Test Circuit 1.8 3.0 µV IDSS RANK MARKING J32 J33 J34 J35 J36 J37 40 to 70 60 to 110 90 to 180 150 to 300 200 to 450 300 to 600 IDSS (µA) NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kΩ JIS A NV (r.m.s) C = 10 pF 2 Data Sheet D15940EJ1V0DS 2SK1109 TYPICAL CHARACTERISTICS (TA = 25°C) GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 DERATING FACTOR OF POWER DISSIPATION IG - Gate Current - µ A dT - Derating Factor - % 30 100 80 60 40 20 10 −1.0 −0.8 −0.6 −0.4 −0.2 −10 −30 −40 0 20 40 60 80 100 120 140 160 VGS - Gate to Source Voltage - V TA - Ambient Temperature - ˚C INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE CiSS - Input Capacitance - pF IDS IDSS = S = 2 30 0 µ =1 0 00 µ 0 µ A A A 0.8 0.6 S 0.4 IDS ID - Drain Current - mA 100 VDS = 0 V f = 1.0 MHz VDS = 5 V 0.2 −0.6 −0.4 −0.2 0 50 20 10 5 2 1 1 +0.2 2 5 10 20 50 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS (off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - µ S 0.2 0.4 0.6 0.8 1.0 −20 20 1.0 0 GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 VDS = 5 V 5.0 2.0 |yfs| 1.0 0.5 0.2 VGS (off) 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µA Data Sheet D15940EJ1V0DS 3 2SK1109 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J32 ID - Drain Current - µA 0.10 V 150 0.05 V 100 VGS = 0 V 50 −0.15 V −0.05 V −0.10 V 0 2 4 6 2 6 8 0.10 V 300 0.05 V ID - Drain Current - µA 400 −0.15 V 4 6 8 0.15 V VGS = 0 V 200 −0.05 V 100 0 2 10 −0.10 V 0 2 4 −0.15 V 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J36 0.15 V 0.05 V 420 VGS = 0 V 280 −0.05 V −0.10 V −0.15 V 140 2 4 6 10 RANK: J37 900 0.10 V 560 10 RANK: J35 0.15 V 0.10 V 720 0.05 V 540 VGS = 0 V −0.05 V 360 −0.10 V 180 −0.15 V 8 10 0 0 VDS - Drain to Source Voltage - V 4 4 0.10 V −0.10 V ID - Drain Current - µA 0 500 −0.05 V 0 −0.15 V −0.05 V −0.10 V 0.15 V VGS = 0 V 700 VGS = 0 V 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.05 V 0 0.05 V 120 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 0 0.10 V 180 VDS - Drain to Source Voltage - V 240 160 240 0 10 0.15 V VDS - Drain to Source Voltage - V 320 0 8 RANK: J34 400 RANK: J33 300 200 0 ID - Drain Current - µA 0.15 V ID - Drain Current - µA ID - Drain Current - µA 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2 4 6 8 VDS - Drain to Source Voltage - V Data Sheet D15940EJ1V0DS 10 2SK1109 [MEMO] Data Sheet D15940EJ1V0DS 5 2SK1109 [MEMO] 6 Data Sheet D15940EJ1V0DS 2SK1109 [MEMO] Data Sheet D15940EJ1V0DS 7 2SK1109 • The information in this document is current as of January, 2002. 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