DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) 0.8 ± 0.1 1.6 ± 0.1 0.3 +0.1 –0 PACKAGE 2SK3664 SC-75 (USM) 3 0 to 0.1 2 1 0.2 0.5 +0.1 –0 0.6 0.5 0.75 ± 0.05 1.0 1.6 ± 0.1 ORDERING INFORMATION PART NUMBER 0.15 +0.1 –0.05 1: Source 2: Gate 3: Drain Marking: G1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±0.5 A ID(pulse) ±2.0 A Drain Current (pulse) Note1 Total Power Dissipation Note2 PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 300 mm x 0.64 mm EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with caution for electrostatic discharge. VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16599EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2003 2SK3664 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10 V, ID = 0.3 A 0.25 0.75 RDS(on)1 VGS = 4.5 V, ID = 0.3 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.3 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 28 pF Output Capacitance Coss VGS = 0 V 11 pF Reverse Transfer Capacitance Crss f = 1 MHz 7.0 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 0.30 A 20 ns tr VGS = 4.0 V 51 ns td(off) RG = 10 Ω 94 ns 87 ns 0.87 V Rise Time Turn-off Delay Time Fall Time tf Body Diode Forward Voltage Note VF(S-D) IF = 0.5 A, VGS = 0 V Note Pulsed TEST CIRCUIT SWITCHING TIME D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS 90% VGS 0 VDS τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet D16599EJ2V0DS 2SK3664 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2 Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm Pulsed 200 ID - Drain Current - A PT - Total Power Dissipation - mW 240 160 120 80 1.6 4.0 V VGS = 4.5 V 2.5 V 1.2 0.8 0.4 40 0 0 30 60 90 120 150 180 210 0 0.4 0.8 1.2 TA - Ambient Temperature - °C VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 10 1.4 VDS = 10 V ID = 1.0 mA 1 0.1 VGS(off) - Gate Cut-off Voltage - V ID - Drain Current - A VDS = 10 V Pulsed TA = 125°C 75°C 25°C −25°C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 1.2 1 0.8 0.6 0.4 -50 3 VGS - Gate to Source Voltage - V TA = −25°C 25°C 75°C 125°C 0.1 0.01 0.001 0.01 0.1 1 10 RDS(on) - Drain to Source On-state Resistance - Ω | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed 1 0 50 100 150 Tch - Channel Temperature - °C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 1.6 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.2 1 VGS = 4.5 V Pulsed 0.8 0.6 TA = 125°C 75°C 0.4 0.2 0 0.01 25°C −25°C 0.1 1 10 ID - Drain Current - A Data Sheet D16599EJ2V0DS 3 2SK3664 1.2 VGS = 4.0 V Pulsed 1 TA = 125°C 75°C 0.8 0.6 0.4 25°C −25°C 0.2 0 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.2 Pulsed 1 0.8 0.6 ID = 0.3 A 0.4 0.2 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V 1 VGS = 2.5 V Pulsed TA = 125°C 75°C 0.8 0.6 25°C −25°C 0.4 0.2 0 0.01 Pulsed 1 VGS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 VGS = 4.0 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A 0.2 0 -50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF Coss Crss 1 1 10 100 VDS - Drain to Source Voltage - V 4 0 50 100 150 Tch - Channel Temperature - °C 1000 Ciss 0.1 10 SWITCHING CHARACTERISTICS VGS = 0 V f = 1.0 MHz 10 1 1.2 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 VDD = 10 V VGS = 4.0 V RG = 10 Ω td(off) 100 tf tr td(on) 10 0.01 0.1 1 ID - Drain Current - A Data Sheet D16599EJ2V0DS 10 2SK3664 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 IF - Diode Forward Current - A Pulsed 1 VGS = 0 V 0.1 0.01 0.001 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet D16599EJ2V0DS 5 2SK3664 • The information in this document is current as of November, 2004. 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