DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2158 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS (in millimeters) driven on a low voltage and it is not necessary to consider 2.8 ± 0.2 1.5 0.4 –0.05 portable systems such as headphone stereo sets and camcorders. 2.9 ± 0.2 FEATURES • Capable of drive gate with 1.5 V • Because of high input impedance, there is no need to 0.95 0.95 +0.1 driving current, the 2SK2158 is suitable for use in low-voltage +0.1 0.65 –0.15 2 3 1 consider driving current. +0.1 ing an operating voltage as low as 1.5 V. Because it can be 0.4 –0.05 The 2SK2158 is an N-channel vertical type MOS FET featur- • Bias resistance can be omitted, enabling reduction in total Marking +0.1 0.16 –0.06 0 to 0.1 1.1 to 1.4 0.3 number of parts. Marking: G23 EQUIVALENT CIRCUIT 3 Internal diode 2 Gate protection diode PIN CONNECTION 1. Source (S) 2. Gate (G) 3. Drain (D) 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Drain to Source Voltage VDSS VGS = 0 50 V Gate to Source Voltage VGSS VDS = 0 ±7.0 V Drain Current (DC) ID(DC) ±0.1 A ±0.2 A Drain Current (pulse) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % Total Power Dissipation PT 200 mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11234EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 2SK2158 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±3.0 µA Gate Cut-off Voltage VGS(off) VDS = 3 V, ID = 1.0 µA 0.5 1.1 V Forward Transfer Admittance | yfs | VDS = 3 V, ID = 10 mA 20 0.7 mS Drain to Source On-state Resistance RDS(on)1 VGS = 1.5 V, ID = 1.0 mA 32 50 Ω Drain to Source On-state Resistance RDS(on)2 VGS = 2.5 V, ID = 10 mA 16 20 Ω Drain to Source On-state Resistance RDS(on)3 VGS = 4.0 V, ID = 10 mA 12 15 Ω Ciss VDS = 3 V, VGS = 0 6 pF Output Capacitance Coss f = 1.0 MHz 8 pF Reverse Transfer Capacitance Crss 1 pF Turn-On Delay Time td(on) VDD = 3 V, ID = 20 mA 9 ns VGS(on) = 3 V, RG = 10 Ω 48 ns 21 ns 31 ns Input Capacitance Rise Time Turn-Off Delay Time Fall Time 2 SYMBOL tr td(off) tf RL = 150 Ω 2SK2158 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 80 160 ID - Drain Current - mA dT - Derating Factor - % 60 40 20 7 V 100 5 3. V V 0 3. 2.5 V 120 2.0 V 80 1.5 V 40 VGS = 1.0 V 0 30 60 90 120 0 150 1 TA - Ambient Temperature - ˚C |yfs| - Forward Transfer Admittance - S 1 000 ID - Drain Current - mA VDS = 3 V 10 TA = 75 ˚C 25 ˚C –25 ˚C 0.1 0.01 0 1 2 TA = –25 ˚C 25 ˚C 100 75 ˚C 10 1 0.1 1 VGS = 1.5 V 60 50 TA = 75 ˚C 25 ˚C 30 –25 ˚C 20 10 10 ID - Drain Current - mA 100 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 70 1 10 100 1 000 ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 5 VDS = 3 V VGS - Gate to Source Voltage - V 40 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.001 3 VDS - Drain to Source Voltage - V TRANSFER CHARACTERISITICS 1 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = 2.5 1.5 V 60 50 40 30 20 TA = 75 ˚C 25 ˚C 10 –25 ˚C 0 1 10 100 1 000 ID - Drain Current - mA 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = 4.0 V 60 50 40 30 TA = 75 ˚C 20 25 ˚C –25 ˚C 10 0 1 10 100 1 000 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 2SK2158 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 40 ID = 10 mA 30 ID = 100 mA 20 10 ID - Drain Current - mA td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100 Ciss 5 Coss 2 1 0.5 0.2 Crss VGS = 0 f = 1 MHz 0.1 1 2 5 10 20 50 100 VDS - Drain to Source Voltage - V 1 0.1 0.01 0.8 1.2 1.6 VSD - Source to Drain Voltage - V tr 50 tf 20 td(off) td(on) 10 5 VDD = 3 V VGS(on) = 3 V RG = 10 Ω 2 1 10 20 50 100 200 ID - Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.001 0.4 6 SWITCHING CHARACTERISTICS 10 ISD - Source to Drain Current - A 4 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 4 2 0 2 500 1 000 2SK2158 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SK2158 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11