DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 3° +5° –3° FEATURES • Can be driven by a 4.0-V power source • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) 0.1±0.05 1 4 6.4 ±0.2 PACKAGE µPA1800GR-9JG Power TSSOP8 0.65 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±5.0 A ID(pulse) ±20 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation Note2 0.10 M EQUIVALENT CIRCUIT Drain to Source Voltage Drain Current (pulse) 1.0 ±0.2 0.1 0.8 MAX. 0.27 +0.03 –0.08 Note1 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PART NUMBER 0.5 0.6 +0.15 –0.1 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11407EJ1V0DS00 (1st edition) Date Published February 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2000 µ PA1800 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.41 2.0 V | yfs | VDS = 10 V, ID = 3.0 A 3.0 7.0 RDS(on)1 VGS = 10 V, ID = 3.0 A 20 27 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.0 A 29 39 mΩ RDS(on)3 VGS = 4.0 V, ID = 3.0 A 32 45 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 680 pF Output Capacitance Coss VGS = 0 V 470 pF Reverse Transfer Capacitance Crss f = 1 MHz 170 pF Turn-on Delay Time td(on) VDD = 15 V 18 ns tr ID = 3.0 A 70 ns VGS(on) = 10 V 60 ns tf RG = 10 Ω 26 ns Total Gate Charge QG VDD = 24 V 23 nC Gate to Source Charge QGS ID = 5.0 A 2 nC Gate to Drain Charge QGD VGS = 10 V 7 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 V 0.74 V Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 80 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA tf toff Data Sheet D11407EJ1V0DS00 µ PA1800 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 60 40 ID(pulse) d ite ) Lim 10 V n) S(o = RD VGS (@ 80 ID - Drain Current - A dT - Derating Factor - % 100 10 PW 10 ID(DC) 10 0m s 1 =1 ms ms DC 0.1 20 TA = 25˚C Single Pulse Mounted on Ceramic 2 Substrate of 50cm x 1.1 mm 0 30 60 90 120 0.01 0.1 150 10 1 100 VDS - Drain to Source Voltage - V TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 100 20 VDS = 10 V Pulsed ID - Drain Current - A ID - Drain Current - A 10 VGS = 4.5 V 15 VGS = 4.0 V 10 VGS = 2.5 V 1 TA = 125˚C 0.1 75˚C 0.01 25˚C 5 −25˚C 0.001 0 0.0001 0 0.2 0.4 0.6 0.8 1.0 0.5 0 VDS - Drain to Source Voltage - V 100 VDS = 10 V ID = 1 mA 1.5 1.0 0.5 −50 0 50 100 2 1.5 2.5 3 FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 2.0 1 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V ★ 150 VDS = 10 V TA = −25˚C 10 25˚C 1 75˚C 125˚C 0.1 0.01 0.001 Tch - Channel Temperature - ˚C 0.01 0.1 1 10 100 ID - Drain Current - A Data Sheet D11407EJ1V0DS00 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.0 V 50 TA = 125˚C 40 75˚C 25˚C 30 −25˚C 20 10 1 0.1 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1800 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.5 V 50 TA = 125˚C 40 75˚C 25˚C 30 −25˚C 20 10 40 TA = 125˚C 75˚C 25˚C −25˚C 10 0 1 0.1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = 10 V 20 60 50 40 30 20 10 50 15 4.5 V 30 10 V 20 10 0 −50 0 50 100 Tch - Channel Temperature -˚C 10000 150 f = 1 MHz VGS = 0 V 1000 Ciss Coss 100 20 VGS - Gate to Source Voltage - V 4 VGS = 4.0 V 40 10 0.1 10 ID = 3.0 A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 ID = 3.0 A 5 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID - Drain Current - A 0 0 10 ID - Drain Current - A ID - Drain Current - A 30 1 0.1 Data Sheet D11407EJ1V0DS00 Crss 1 10 VDS - Drain to Source Voltage - V 100 µ PA1800 SWITCHING CHARACTERISTICS VDD = 15 V VGS(on) = 10 V RG = 10 Ω tr 100 10 IF - Source to Drain Current - A td(on), tr, td(off), tf - Swwitchig Time - ns 1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(off) tf td(on) 10 1 0.01 0.1 1 ID - Drain Current - A 10 VGS = 0 V 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 VF(S-D) - Source to Drain Voltage - V 1 DYNAMIC INPUT CHARACTERISTICS 12 10 VDD = 12 V VDD = 18 V 8 VDD = 24 V 6 4 2 0 0 4 8 12 16 20 24 QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W VGS - Gate to Source Voltage - V ID = 5.0 A Mounted on ceramic substrate of 50 cm2 x 1.1 mm Single Pulse 100 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet D11407EJ1V0DS00 5 µ PA1800 [MEMO] 6 Data Sheet D11407EJ1V0DS00 µ PA1800 [MEMO] Data Sheet D11407EJ1V0DS00 7 µ PA1800 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8