NEC UPA1856GR-9JG

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1856
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
The µPA1856 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1856 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
1.2 MAX.
1.0±0.05
0.25
FEATURES
3° +5°
–3°
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 45 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 48 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 72 mΩ MAX. (VGS = –2.7 V, ID = –2.5 A)
RDS(on)4 = 77 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
1
6.4 ±0.2
3.15 ±0.15
3.0 ±0.1
µPA1856GR-9JG
Power TSSOP8
0.65
EQUIVALENT CIRCUIT
Drain to Source Voltage
VDSS
–20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID(DC)
±4.5
A
ID(pulse)
±18
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Total Power Dissipation
Note2
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain Current (pulse)
1.0 ±0.2
0.8 MAX.
0.27 +0.03
–0.08
Note1
4.4 ±0.1
0.145 ±0.055
PACKAGE
0.6 +0.15
–0.1
4
ORDERING INFORMATION
PART NUMBER
0.5
0.1±0.05
Drain1
Gate1
Gate
Protection
Diode
Source1
Drain2
Body
Diode
Gate2
Body
Diode
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13808EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998, 1999
µ PA1856
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
µA
VGS(off)
VDS = –10 V, ID = –1 mA
–0.5
–1.1
–1.5
V
| yfs |
VDS = –10 V, ID = –2.5 A
3
8.8
RDS(on)1
VGS = –4.5 V, ID = –2.5 A
37
45
mΩ
RDS(on)2
VGS = –4.0 V, ID = –2.5 A
39
48
mΩ
RDS(on)3
VGS = –2.7 V, ID = –2.5 A
52
72
mΩ
RDS(on)4
VGS = –2.5 V, ID = –2.5 A
57
77
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
700
pF
Output Capacitance
Coss
VGS = 0 V
208
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
100
pF
Turn-on Delay Time
td(on)
VDD = –10 V
300
ns
tr
ID = –2.5 A
528
ns
VGS(on) = –4.0 V
242
ns
RG = 10 Ω
698
ns
Rise Time
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDS = –16 V
6.0
nC
Gate to Source Charge
QGS
ID = –4.5 A
2.1
nC
Gate to Drain Charge
QGD
VGS = –4.0 V
2.8
nC
Diode Forward Voltage
VF(S-D)
IF = 4.5 A, VGS = 0 V
0.86
V
•
Reverse Recovery Time
trr
IF = 4.5 A, VGS = 0 V
32
ns
•
Reverse Recovery Charge
Qrr
di/dt = 10 A / µs
2.2
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
PG.
VGS (−)
VGS
Wave Form
0
10 %
PG.
90 %
90 %
ID
VGS (−)
0
ID
10 %
0 10 %
Wave Form
τ
τ = 1 µs
Duty Cycle ≤ 1 %
tr td(off)
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID (−)
2
VGS(on)
IG = −2 mA
tf
toff
Data Sheet D13808EJ2V0DS00
µ PA1856
TYPICAL CHARACTERISTICS (TA = 25°C)
•
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
−100
80
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
20
30
60
90
120
TA - Ambient Temperature - ˚C
•
V
(@
PW
PW
=1
=1
0
ms
ms
=1
00
ms
DC
−0.1 TA = 25 ˚C
−4.5 V
−4.0 V
−16
−12
−10
−1
VDS - Drain to Source Voltage - V
−100
TRANSFER CHARACTERISTICS
−100
−2.5 V
−8
−4
VDS = −10 V
−10
ID - Drain Current - A
VGS = −10 V
−1
−0.1
−0.01
TA = 125˚C
75˚C
25˚C
−25˚C
−0.001
−0.0001
0
0.0
−0.2
−0.6
−0.4
−0.8
−1.0
−0.00001
0
−0.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
100
−1.0
0
50
100
−1.5
−2.0
−2.5
−3.0
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
−1.5 VDS = −10 V
ID = −1 mA
−0.5
−50
−1.0
VGS - Gate to Sorce Voltage - V
VDS - Drain to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
PW
ID (DC)
−1
−0.01
−0.1
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−20
ID - Drain Current - A
−10
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm2x 1.1 mm
PD(FET1) : PD(FET2) = 1:1
0
•
ID (pulse)
d
ite V)
im .5
)L 4
on = −
S(
RD GS
150
VDS = −10V
10
TA = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
−0.01
Tch - Channel Temperature - ˚C
−0.1
−1
−10
−100
ID - Drain Current - A
Data Sheet D13808EJ2V0DS00
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −2.5 V
80
TA = 125˚C
75˚C
60
25˚C
−25˚C
40
−0.01
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-State Resistance - mΩ
RDS(on) - Drain to Source On-State Resistance - mΩ
µ PA1856
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
VGS = −2.7 V
80
TA = 125˚C
75˚C
60
25˚C
−25˚C
40
−0.01
60
TA = 125˚C
50
TA = 75˚C
TA = 25˚C
TA = −25˚C
30
−0.01
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-State Resistance - mΩ
RDS(on) - Drain to Source On-State Resistance - mΩ
VGS = −4.0 V
40
60
VGS = −4.5 V
TA = 125˚C
50
75˚C
40
25˚C
−25˚C
30
20
−0.01
VGS = −2.5 V
−2.7 V
−4.0 V
−4.5 V
40
20
−50
0
Tch
4
50
100
- Channel Temperature -˚C
RDS (on) - Drain to Source On-state Resistance - mΩ
RDS (on) - Drain to Source On-state Resistance - mΩ
ID = −2.5 A
60
−1
−0.1
−10
−100
ID - Drain Current - A
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
100
−10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
70
−1
−0.1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
ID = −2.5 A
100
80
60
40
20
0
150
Data Sheet D13808EJ2V0DS00
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
−12
µ PA1856
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0V
td(on), tr, td(off), tf - Switchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
10000
1000
Ciss
Coss
Crss
100
10
−0.1
−1
−10
1000
tf
tr
td(on)
td(off)
100
VDD = −10 V
VGS(on) = −4.0 V
RG = 10 Ω
10
−0.1
−100
−1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT CHARACTERISTICS
−8
VGS - Gate to Source Voltage - V
IF - Source to Drain Current - A
100
10
1
0.1
0.6
0.8
1.0
1.2
ID = −4.5 A
−6
VDD = −16 V
−10 V
−4
−2
0
0.01
0.4
0
1
2
3
4
5
6
7
8
9
10
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
•
−10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
1000
100
62.5˚C/W
10
1
0.1
1m
Mounted on ceramic substrate
of 5000 mm2 x 1.1 mm
Single Pulse
PD(FET1) : PD(FET2) = 1:1
10m
100m
1
10
100
1000
PW - Pulse Width - S
Data Sheet D13808EJ2V0DS00
5
µ PA1856
[MEMO]
6
Data Sheet D13808EJ2V0DS00
µ PA1856
[MEMO]
Data Sheet D13808EJ2V0DS00
7
µ PA1856
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8