DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES PART NUMBER PACKAGE 2SK3712 TO-251 (MP-3) 2SK3712-Z TO-252 (MP-3Z) • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.58 Ω MAX. (VGS = 10 V, ID = 4.5 A) • Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±9.0 A ID(pulse) ±27 A Total Power Dissipation (TC = 25°C) PT1 40 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 9 A Single Avalanche Energy Note2 EAS 8.1 mJ IAR 9 A EAR 8.1 mJ Repetitive Avalanche Current Note3 Repetitive Pulse Avalanche Energy Note3 (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, L = 100 µH The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16372EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3712 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 4.5 V | yfs | VDS = 10 V, ID = 4.5 A 3 6 RDS(on) VGS = 10 V, ID = 4.5 A 0.45 Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Ω 0.58 Input Capacitance Ciss VDS = 10 V 450 pF Output Capacitance Coss VGS = 0 V 100 pF Reverse Transfer Capacitance Crss f = 1 MHz 40 pF Turn-on Delay Time td(on) VDD = 125 V, ID = 4.5 A 8 ns VGS = 10 V 8 ns RG = 0 Ω 21 ns 6 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 200 V 14 nC Gate to Source Charge QGS VGS = 10 V 3 nC QGD ID = 9.0 A 7 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 9 A, VGS = 0 V 0.9 1.5 V Reverse Recovery Time trr IF = 9 A, VGS = 0 V 150 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 630 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D16372EJ2V0DS td(on) ton tf toff 2SK3712 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) = 27 A 10 PW = 100 µs 1 ms 10 ms ID(DC) = 9.0 A 1 RDS(on) Limited (at VGS = 10 V) 0.1 Power dissipation limited 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A TC = 25°C Single pulse 100 Single pulse R th(ch-A): T A = 25°C R th(ch-C): T C = 25°C R th(ch-A) = 125°C/W 10 R th(ch-C) = 3.125°C/W 1 0.1 0.01 100 µ 1m 10 m 100m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16372EJ2V0DS 3 2SK3712 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 30 VGS = 10 V Pulsed VDS = 10 V Pulsed 10 ID - Drain Current - A ID - Drain Current - A 25 20 15 10 TA = −25°C 25°C 75°C 125°C 150°C 1 0.1 0.01 0.001 5 0.0001 0 0 5 10 15 20 25 0 30 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 4.5 VDS = 10 V ID = 1 mA 4 3.5 3 2.5 100 25 50 75 100 125 150 1 0 VDS = 10 V Pulsed 0 0.01 175 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 VGS = 10 V Pulsed 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 4 0 TA = − 25°C 25°C 75°C 125°C 150°C 10 2 -25 15 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V -50 10 1.3 Pulsed 1.2 1.1 ID = 9.0 A 4.5 A 1.8 A 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ID - Drain Current - A Data Sheet D16372EJ2V0DS 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V 18 20 2SK3712 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 2 VGS = 10 V Pulsed 1.75 Ciss, Coss, Crss - Capacitance - pF ID = 9.0 A 1.5 1.25 1 4.5 A 0.75 0.5 100 C oss 10 C rss 0.25 VGS = 0 V f = 1 MHz 1 0 -50 -25 0 25 50 75 100 125 150 0.1 175 10 100 1000 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V 250 tf td(off) td(on) 10 tr VDD = 125 V VGS = 10 V RG = 0 Ω 1 0.1 15 ID = 9.0 A 200 12 VDD = 200 V 125 V 62.5 V 9 150 VGS 6 100 50 3 VDS 0 1 10 0 0 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 VGS = 0 V Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 Tch - Channel Temperature - °C 100 td(on), tr, td(off), tf - Switching Time - ns C iss VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 1 0.1 di/dt = 100 A/µs VGS = 0 V 100 0.01 10 1 0 0.25 0.5 0.75 1 1.25 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16372EJ2V0DS 5 2SK3712 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 VDD = 125 V VGS = 20 → 0 V RG = 25 Ω 10 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 9 A EAS = 8.1 mJ 1 0.01 60 40 VDD = 125 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 9 A 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 80 Data Sheet D16372EJ2V0DS 2SK3712 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D16372EJ2V0DS 7 2SK3712 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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