NEC 2SK3712

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
PART NUMBER
PACKAGE
2SK3712
TO-251 (MP-3)
2SK3712-Z
TO-252 (MP-3Z)
• High voltage: VDSS = 250 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.58 Ω MAX. (VGS = 10 V, ID = 4.5 A)
• Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±9.0
A
ID(pulse)
±27
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
9
A
Single Avalanche Energy
Note2
EAS
8.1
mJ
IAR
9
A
EAR
8.1
mJ
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch(peak) ≤ 150°C, L = 100 µH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3712
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
4.5
V
| yfs |
VDS = 10 V, ID = 4.5 A
3
6
RDS(on)
VGS = 10 V, ID = 4.5 A
0.45
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Ω
0.58
Input Capacitance
Ciss
VDS = 10 V
450
pF
Output Capacitance
Coss
VGS = 0 V
100
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 4.5 A
8
ns
VGS = 10 V
8
ns
RG = 0 Ω
21
ns
6
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 200 V
14
nC
Gate to Source Charge
QGS
VGS = 10 V
3
nC
QGD
ID = 9.0 A
7
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 9 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 9 A, VGS = 0 V
150
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
630
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D16372EJ2V0DS
td(on)
ton
tf
toff
2SK3712
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse) = 27 A
10
PW = 100 µs
1 ms
10 ms
ID(DC) = 9.0 A
1
RDS(on) Limited
(at VGS = 10 V)
0.1
Power dissipation limited
0.01
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
TC = 25°C
Single pulse
100
Single pulse
R th(ch-A): T A = 25°C
R th(ch-C): T C = 25°C
R th(ch-A) = 125°C/W
10
R th(ch-C) = 3.125°C/W
1
0.1
0.01
100 µ
1m
10 m
100m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16372EJ2V0DS
3
2SK3712
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
30
VGS = 10 V
Pulsed
VDS = 10 V
Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
25
20
15
10
TA = −25°C
25°C
75°C
125°C
150°C
1
0.1
0.01
0.001
5
0.0001
0
0
5
10
15
20
25
0
30
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
4.5
VDS = 10 V
ID = 1 mA
4
3.5
3
2.5
100
25
50
75
100
125
150
1
0
VDS = 10 V
Pulsed
0
0.01
175
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
VGS = 10 V
Pulsed
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
4
0
TA = − 25°C
25°C
75°C
125°C
150°C
10
2
-25
15
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
-50
10
1.3
Pulsed
1.2
1.1
ID = 9.0 A
4.5 A
1.8 A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
ID - Drain Current - A
Data Sheet D16372EJ2V0DS
0
2
4
6
8
10
12
14
16
VGS - Gate to Source Voltage - V
18
20
2SK3712
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
2
VGS = 10 V
Pulsed
1.75
Ciss, Coss, Crss - Capacitance - pF
ID = 9.0 A
1.5
1.25
1
4.5 A
0.75
0.5
100
C oss
10
C rss
0.25
VGS = 0 V
f = 1 MHz
1
0
-50
-25
0
25
50
75
100
125
150
0.1
175
10
100
1000
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
250
tf
td(off)
td(on)
10
tr
VDD = 125 V
VGS = 10 V
RG = 0 Ω
1
0.1
15
ID = 9.0 A
200
12
VDD = 200 V
125 V
62.5 V
9
150
VGS
6
100
50
3
VDS
0
1
10
0
0
100
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
VGS = 0 V
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
1
Tch - Channel Temperature - °C
100
td(on), tr, td(off), tf - Switching Time - ns
C iss
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
100
0.01
10
1
0
0.25
0.5
0.75
1
1.25
1.5
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16372EJ2V0DS
5
2SK3712
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
VDD = 125 V
VGS = 20 → 0 V
RG = 25 Ω
10
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
IAS = 9 A
EAS = 8.1 mJ
1
0.01
60
40
VDD = 125 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 9 A
20
0
0.1
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
80
Data Sheet D16372EJ2V0DS
2SK3712
PACKAGE DRAWINGS (Unit: mm)
2) TO-252 (MP-3Z)
1.1 ±0.2
+0.2
0.5 −0.1
+0.2
0.5 −0.1
0.75
2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
1.5 −0.1
2.3 ±0.2
1.0 MIN.
1.8TYP.
0.5 ±0.1
0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.7
0.8 4.3 MAX.
1.1 ±0.2
13.7 MIN.
3
7.0 MIN.
2
5.5 ±0.2
1.6 ±0.2
1
4
5.5 ±0.2
10.0 MAX.
6.5 ±0.2
5.0 ±0.2
0.5 ±0.1
4
+0.2
2.3 ±0.2
2.0
MIN.
5.0 ±0.2
1.5 −0.1
6.5 ±0.2
+0.2
1) TO-251 (MP-3)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D16372EJ2V0DS
7
2SK3712
• The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1