DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3715 Isolated TO-220 FEATURES • Super low on-state resistance (Isolated TO-220) RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) • Low C iss: C iss = 8400 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±75 A ID(pulse) ±300 A Total Power Dissipation (TC = 25°C) PT1 40 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C IAS 67 A EAS 450 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16378EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3715 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 38 A 33 65 RDS(on)1 VGS = 10 V, ID = 38 A 4.8 6.0 mΩ RDS(on)2 VGS = 4 V, ID = 38 A 6.1 9.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 8400 pF Output Capacitance Coss VGS = 0 V 1200 pF Reverse Transfer Capacitance Crss f = 1 MHz 530 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 38 A 24 ns VGS = 10 V 15 ns RG = 0 Ω 116 ns 11 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 145 nC Gate to Source Charge QGS VGS = 10 V 21 nC QGD ID = 75 A 39 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 75 A, VGS = 0 V 0.92 Reverse Recovery Time trr IF = 50 A, VGS = 0 V 59 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 136 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D16378EJ2V0DS td(on) ton tf toff 2SK3715 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 10 ID(DC) RDS(on) Limited (at VGS = 10 V) DC PW = 100 µs 1 ms 10 ms 1 0.1 Single pulse TC = 25°C 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 62.5°C/W 10 Rth(ch-C) = 3.13°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16378EJ2V0DS 3 2SK3715 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 350 V DS = 10 V Pulsed Pulsed 100 ID - Drain Current - A ID - Drain Current - A 300 V GS = 10 V 250 200 150 4.0 V 100 10 T ch = 150°C 85°C 25°C −55°C 1 0.1 0.01 50 0 0.001 0 0.5 1 1.5 2 0 2.5 VDS - Drain to Source Voltage - V 2 1.5 1 0.5 0 25 50 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 2.5 0 10 V DS = 10 V Pulsed 1 0.1 16 14 12 10 V GS = 4.0 V 6 10 V 2 0 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 18 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 ID - Drain Current - A 4 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 5 T ch = −50°C 25°C 85°C 150°C Tch - Channel Temperature - °C 8 4 100 75 100 125 150 175 20 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V DS = 10 V ID = 1 m A -75 -50 -25 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 1 Pulsed 8 6 ID = 38 A 4 2 0 0 10 VGS - Gate to Source Voltage - V Data Sheet D16378EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 12 10000 ID = 38 A Pulsed Ciss, Coss, Crss - Capacitance - pF 10 V GS = 4 V 8 6 10 V 4 2 0 C iss C oss 1000 C rss VGS = 0 V f = 1 MHz 100 -50 -25 0 25 50 75 100 125 150 0.1 1 Tch - Channel Temperature - °C DYNAMIC INPUT/OUTPUT CHARACTERISTICS V DD = 30 V V GS = 10 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) td(on) 10 tr tf 50 10 45 9 40 8 V DD = 48 V 30 V 12 V 35 30 V GS 7 6 25 5 20 4 15 3 10 2 V DS 5 ID = 7 5 A 0 1 0.1 1 10 100 1 0 0 20 40 60 80 100 120 140 160 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3715 V GS = 10 V 100 4V 10 0V 1 0.1 di/dt = 50 A/µs V GS = 0 V 100 Pulsed 10 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16378EJ2V0DS 5 2SK3715 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IA S = 6 7 A EAS = 450 m J 10 VDD = 30 V R G = 25 Ω VGS = 20 → 0 V S ta rtin g T c h = 2 5 °C S in g le p u ls e 80 60 40 20 1 10 µ 100 µ 0 1m 10 m L - Inductive Load - H 6 V DD = 30 V R G = 25 Ω V GS = 20 → 0 V I AS ≤ 67 A 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16378EJ2V0DS 2SK3715 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 4.5 ±0.2 4 ±0.2 0.7 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 2.7 ±0.2 12.0 ±0.2 3 ±0.1 φ 3.2 ±0.2 13.5 MIN. 15.0 ±0.3 10.0 ±0.3 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D16378EJ2V0DS 7 2SK3715 • The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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