DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82P04PLF SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP82P04PLF-E1-AY Note NP82P04PLF-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES (TO-263) • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 5000 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −40 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25°C) ID(DC) m82 A ID(pulse) m246 A PT1 150 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 46 A Repetitive Avalanche Energy Note2 EAR 212 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.0 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18718EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 NP82P04PLF ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −40 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA VGS(th) VDS = −10 V, ID = −1 mA −1.5 −2.0 −2.5 V | yfs | VDS = −10 V, ID = −41 A 28 58 RDS(on)1 VGS = −10 V, ID = −41 A 6.5 8 mΩ RDS(on)2 VGS = −4.5 V, ID = −41 A 8.3 12 mΩ Input Capacitance Ciss VDS = −10 V, 5000 pF Output Capacitance Coss VGS = 0 V, 1100 pF Reverse Transfer Capacitance Crss f = 1 MHz 440 pF Turn-on Delay Time td(on) VDD = −20 V, ID = −41 A, 17 ns Rise Time tr VGS = −10 V, 18 ns Turn-off Delay Time td(off) RG = 0 Ω 126 ns Fall Time tf 58 ns Total Gate Charge QG VDD = −32 V, 90 nC Gate to Source Charge QGS VGS = −10 V, 15 nC QGD ID = −82 A 21 nC VF(S-D) IF = −82 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = −82 A, VGS = 0 V, 48 ns Reverse Recovery Charge Qrr di/dt = −100 A/μs 62 nC Gate to Source Threshold Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S 1.5 V Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet D18718EJ2V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff NP82P04PLF TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 180 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 150 120 90 60 30 0 0 0 25 50 75 100 125 150 175 200 0 25 Tch - Channel Temperature - °C 50 75 100 125 150 175 200 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA -1000 PW ID(pulse) =1 00 μs 1i s DC 1i 0 m i s GS i is (V ID(DC) m R d it e Li m V ) i0 1 =− D er -10 (o DS n) w Po p si io at n d it e m Li -1 TC = 25°C Single Pulse -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A i -100 Rth(ch-A) = 83.3°C/Wi 100 10 Rth(ch-C) = 1.0°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18718EJ2V0DS 3 NP82P04PLF DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -400 -1000 VDS = −10 V Pulsed -300 ID - Drain Current - A ID - Drain Current - A -100 VGS = −10 V -200 −4.5 V -100 -10 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C -1 -0.1 -0.01 Pulsed 0 -0.001 -1 -2 -3 -4 -5 -6 -7 0 -1 -4 -5 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -3 -2.5 -2 -1.5 -1 -0.5 VDS = −10 V ID = −1 mA 0 -75 -25 25 75 125 1000 175 Tch = −55°C −25°C 25°C 75°C 125°C 100 150°C 175°C 10 1 VDS = −10 V Pulsed 0.1 -0.1 -1 VGS = −4.5 V −10 V Pulsed 0 -1 -10 -100 -100 -1000 -1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 20 10 -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ -3 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 20 ID = −65.6 A −41 A −16.4 A 15 10 5 Pulsed 0 0 -5 -10 -15 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 -2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 Data Sheet D18718EJ2V0DS -20 NP82P04PLF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 20 Ciss, Coss, Crss - Capacitance - pF 15 VGS = −4.5 V 10 −10 V 5 ID = −41 A Pulsed Ciss 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 -0.1 0 -75 -25 25 75 125 175 SWITCHING CHARACTERISTICS -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 -40 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) 100 tf td(on) 10 tr VDD = −20 V VGS = −10 V RG = 0 Ω 1 -0.1 -12 VDD = −32 V −20 V −8 V -30 -9 -20 -6 VGS -10 -3 VDS ID = −82 A 0 -1 -10 -100 0 ID - Drain Current - A 20 40 60 80 0 100 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 VGS = −10 V -100 −4.5 V 0V -10 -1 -0.1 Pulsed trr - Reverse Recovery Time - ns -1000 IF - Diode Forward Current - A -1 100 10 -0.01 di/dt = −100 A/μs VGS = 0 V 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V -1 -10 -100 IF - Diode Forward Current - A Data Sheet D18718EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP82P04PLF PACKAGE DRAWING (Unit: mm) 1.35±0.3 TO-263 (MP-25ZP) 0.5 4.45±0.2 1.3±0.2 0.025 to 0.25 0.6± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 8o 0.25 1 2 3 1. Gate 2. Drain 2.5 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D18718EJ2V0DS NP82P04PLF • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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