DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3635 is N-channel MOS FET device that features PART NUMBER PACKAGE 2SK3635 TO-251 (MP-3) 2SK3635-Z TO-252 (MP-3Z) a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low Ciss: Ciss = 390 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) • Avalanche capability rated ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±8.0 A ID(pulse) ±24 A Total Power Dissipation (TC = 25°C) PT1 24 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 8 A Single Avalanche Energy Note2 EAS 6.4 mJ IAR 8 A EAR 2.4 mJ Repetitive Avalanche Current Repetitive Avalanche Energy Note3 Note3 (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch ≤ 125°C, RG = 25 Ω, VDD = 100 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15932EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2001 2SK3635 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 4.5 V | yfs | VDS = 10 V, ID = 4.0 A 3 5 RDS(on) VGS = 10 V, ID = 4.0 A 0.34 Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Ω 0.43 Input Capacitance Ciss VDS = 10 V 390 pF Output Capacitance Coss VGS = 0 V 95 pF Reverse Transfer Capacitance Crss f = 1 MHz 45 pF Turn-on Delay Time td(on) VDD = 100 V, ID = 4.0 A 5 ns VGS = 10 V 7 ns RG = 0 Ω 19 ns 6 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 160 V 12 nC Gate to Source Charge QGS VGS = 10 V 2 nC Gate to Drain Charge QGD ID = 8.0 A 6 nC Body Diode Forward Voltage VF(S-D) IF = 8 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 8 A, VGS = 0 V 110 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 360 nC TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D15932EJ2V0DS td(on) tr ton td(off) tf toff 2SK3635 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF SAFE OPERATING AREA FORWARD BIAS TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 25 100 80 60 40 20 0 20 15 10 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) = 8.0 A PW = 100 µs 1 ms 10 m s DC 1 Power Dissipation Lim ited 0.1 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 10 R DS(on) Lim ited (V GS = 10 V) Rth(j-A) = 125°C/W 100 10 Rth(j-C) = 5.21°C/W 1 0.1 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15932EJ2V0DS 3 2SK3635 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 30 100 Pulsed V DS = 10 V Pulsed 10 20 ID - Drain Current - A ID - Drain Current - A 25 V GS = 10 V 15 10 5 0 0 5 10 15 20 25 1 T ch = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 30 0 5 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 5 V DS = 10 V ID = 1 mA VGS(off) - Gate Cut-off Voltage - V 4 3.5 3 2.5 2 -50 -25 0 25 50 75 100 125 150 | yfs | - Forward Transfer Admittance - S V DS = 10 V 4.5 Pulsed 10 1 T A = 125°C 75°C 25°C −25°C 0 0 0.01 0.1 Tch - Channel Temperature - °C 1.5 1 V GS = 10 V 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - Ω Pulsed 0 0.01 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2 0.5 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 15 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ID - Drain Current - A 4 10 1 Pulsed 0.9 0.8 0.7 ID = 8.0 A 0.6 4.0 A 0.5 1.6 A 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D15932EJ2V0DS 18 20 2SK3635 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 1.4 V GS = 10 V Pulsed 1.2 C iss Ciss, Coss, Crss - Capacitance - pF 1 ID = 8.0 A 0.8 0.6 4.0 A 0.4 0.2 100 C oss C rss 10 VGS = 0 V f = 1 MHz 1 0 -50 -25 0 25 50 75 100 125 0.1 150 1 100 1000 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 240 100 V DD = 100 V V GS = 10 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 td(off) tr 10 tf t d(on) 12 I D = 8.0 A 220 200 160 8 140 120 6 VGS 100 80 4 60 40 2 VDS 20 1 10 V D D = 160 V 100 V 40 V 180 0 0.1 1 10 0 100 0 ID - Drain Current - A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Pulsed V GS = 0 V 10 1 0.1 0.01 100 10 V GS = 0 V di/dt = 100 A/µs 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D15932EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3635 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 V DD = 100 V R G = 25 Ω V GS = 20 → 0 V Starting T ch = 25°C IAS = 8 A 10 1 0.1 0.01 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 E AS = 6.4 mJ 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 V DD = 100 V R G = 25 Ω V GS = 20 → 0 V I AS ≤ 8 A Data Sheet D15932EJ2V0DS 2SK3635 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15932EJ2V0DS 7 2SK3635 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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