GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS (Units in mm) • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 0 1 ± DESCRIPTION J 1. Source 2. Drain 3. Source 4. Gate 4 3 0.65 TYP. 1.9 ± 0.2 1.6 1.5 MAX The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/ low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications. 0.5 TYP. 2 • LOW COST PLASTIC PACKAGE 2.0 ± 0.2 2 0. • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz 0.125 ± 0.05 0.4 MAX Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER QTY NE721S01-T1 NE721S01 PACKAGE LEAD LENGTH 1K/Reel S01 1.0 mm Bulk up to 4K S01 1.0 mm 4K/Reel S01 1.0 mm NE721S01-T1B ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL PARAMETERS AND CONDITIONS PN Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset GS Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz NE721S01 S01 UNITS MIN TYP dBc/Hz -110 dB 7.0 MAX P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 3 V, IDS = 30 mA dBm IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 mA 30 60 100 -2.0 -0.5 15.0 VP Pinch Off Voltage at VDS = 3 V, ID = 100 µA V -4.0 20 gm Transconductance at VDS = 3 V, ID = 10 mA mS IGSO Gate to Source Leak Current at VGS = -5 V µA RTH Thermal Resistance °C/W 40 1.0 10 300 California Eastern Laboratories NE721S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VDS UNITS RATINGS Drain to Source Voltage V 5 VGDO Gate to Drain Voltage V -6 VGSO Gate to Source Voltage V -6 IDS Drain Current mA IDSS TCH Channel Temperature °C 125 TSTG Storage Temperature °C -65 to +125 mW 250 PT Total Power Dissipation Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 400 Drain Current, ID (mA) Total Power Dissipation, PT (mW) 500 300 200 100 80 VGS = 0 V 60 40 VGS = -0.5 V 20 0 50 150 100 200 VGS = -1.0 V 0 250 1 2 4 3 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE BASE BAND 1/f NOISE vs. OFFSET FREQUENCY 5 -80 Base Band 1/f Noise, dBv/Hz Drain Current, ID (mA) VDS = 3 V, IDS = 30 mA VDS = 3 V 80 60 40 20 -90 -100 -110 -120 -130 -140 -150 -160 0 -4.0 -2.0 Gate to Source Voltage, VGS (V) 0 0.1 1 10 Offset Frequency, kHz 100 NE721S01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) VDS = 3 V, ID = 10 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 MAG .936 .877 .813 .743 .691 .649 .639 .659 .683 .710 .748 .776 .805 .839 .859 .858 .877 .874 .875 S21 ANG -48.8 -71.9 -95.7 -119.4 -144.7 -174.6 158.2 136.5 115.8 95.8 78.1 64.2 53.9 45.8 36.4 25.5 18.5 13.8 10.1 S12 MAG ANG 2.501 2.387 2.271 2.153 2.063 1.931 1.765 1.609 1.480 1.351 1.215 1.073 .954 .837 .722 .614 .522 .449 .392 135.8 115.2 95.2 75.6 56.5 36.8 18.4 1.2 -15.7 -32.9 -49.8 -65.3 -79.8 -93.9 -106.6 -118.9 -130.0 -140.1 -148.3 S22 MAG .070 .096 .115 .127 .135 .136 .129 .122 .117 .113 .107 .102 .101 .103 .104 .100 .100 .101 .098 ANG MAG ANG 57.1 41.9 26.4 12.5 -1.1 -14.2 -24.8 -33.4 -39.8 -46.8 -52.8 -54.7 -59.5 -61.9 -67.1 -70.8 -77.8 -82.2 -85.0 .700 .662 .619 .568 .518 .448 .370 .305 .257 .234 .226 .235 .288 .388 .485 .576 .628 .675 .724 -26.5 -40.8 -53.4 -66.2 -77.4 -86.4 -95.5 -111.4 -132.8 -159.5 -173.4 143.9 113.0 89.1 75.7 66.0 55.5 45.9 36.4 VDS = 3 V, IDS = 20 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 MAG .925 .858 .786 .715 .662 .625 .622 .647 .675 .703 .742 .776 .806 .833 .859 .855 .876 .871 .866 S21 S12 ANG MAG ANG -51.4 -75.6 -100.2 -124.5 -150.4 179.8 153.4 132.5 112.7 93.2 76.3 62.7 52.7 44.8 35.4 24.7 17.9 12.7 9.2 2.988 2.819 2.641 2.472 2.335 2.155 1.950 1.773 1.625 1.480 1.332 1.178 1.051 .925 .804 .686 .586 .509 .446 134.5 113.5 93.4 73.9 55.0 35.8 17.9 1.4 -15.1 -31.8 -48.4 -63.7 -77.6 -91.5 -104.2 -116.6 -127.6 -138.1 -147.2 MAG .064 .087 .102 .112 .118 .117 .111 .109 .106 .107 .105 .105 .108 .108 .112 .109 .108 .108 .102 S22 ANG MAG ANG 56.9 41.3 26.7 13.6 1.7 -10.9 -19.1 -26.1 -30.7 -36.3 -41.6 -45.5 -50.7 -54.8 -59.3 -65.3 -74.0 -77.0 -81.9 .676 .636 .591 .540 .493 .425 .352 .286 .236 .212 .204 .212 .266 .360 .458 .553 .610 .655 .703 -26.8 -40.9 -53.1 -65.4 -75.9 -84.3 -92.9 -107.5 -128.9 -156.0 175.1 143.6 111.8 88.4 75.1 65.9 55.5 46.0 36.8 NE721S01 TYPICAL SCATTERING PARAMETERS (TA = 25˚C) VDS = 3 V, IDS = 30 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 MAG .922 .853 .780 .706 .652 .618 .618 .648 .676 .707 .747 .779 .814 .845 .868 .866 .888 .882 .874 S21 S12 ANG MAG ANG -52.5 -77.0 -102.0 -126.7 -152.7 177.5 151.5 131.0 111.6 92.3 75.5 62.3 52.3 44.3 35.3 24.3 17.6 12.8 8.8 3.250 3.048 2.842 2.645 2.483 2.283 2.057 1.871 1.713 1.559 1.403 1.241 1.109 .980 .855 .727 .621 .539 .473 134.0 112.9 92.9 73.4 54.6 35.6 18.1 1.8 -14.5 -31.1 -47.5 -62.7 -76.6 -90.6 -103.2 -115.4 -127.2 -137.3 -146.1 S22 MAG .060 .082 .097 .105 .110 .110 .102 .100 .102 .104 .104 .106 .109 .114 .116 .114 .112 .111 .110 ANG 56.7 41.7 27.8 14.8 2.9 -8.2 -16.3 -20.7 -26.3 -31.1 -35.9 -40.8 -44.5 -49.5 -54.7 -63.3 -67.9 -76.8 -81.7 MAG ANG .672 .632 .586 .538 .488 .426 .354 .288 .239 .214 .204 .209 .260 .356 .457 .547 .610 .656 .706 -26.7 -40.6 -52.6 -64.6 -74.8 -82.8 -90.8 -105.1 -126.2 -153.1 178.3 146.7 113.7 89.5 76.4 66.7 56.1 46.7 37.3 VDS = 3 V, IDS = 40 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 MAG .921 .850 .774 .701 .647 .615 .617 .645 .678 .708 .750 .784 .820 .853 .875 .872 .893 .890 .882 S21 S12 ANG MAG ANG MAG -53.1 -78.0 -103.0 -127.9 -153.9 176.2 150.6 130.4 111.1 92.0 75.3 62.3 52.6 44.3 34.9 24.2 17.5 12.4 9.0 3.386 3.166 2.944 2.732 2.556 2.344 2.116 1.926 1.768 1.612 1.453 1.292 1.157 1.026 .890 .754 .648 .558 .490 133.7 112.6 92.4 73.2 54.5 35.7 18.3 2.1 -14.1 -30.7 -47.1 -62.2 -76.6 -90.5 -103.7 -116.4 -127.8 -138.2 -147.8 .055 .076 .087 .094 .098 .097 .092 .091 .094 .096 .101 .106 .113 .118 .121 .118 .119 .119 .120 S22 ANG 57.6 41.4 27.8 15.7 5.7 -5.6 -11.4 -14.8 -19.4 -22.1 -27.1 -33.1 -37.0 -43.9 -50.7 -58.0 -65.5 -72.2 -79.8 MAG ANG .690 .650 .606 .560 .517 .457 .393 .332 .282 .254 .238 .231 .269 .361 .462 .556 .619 .665 .715 -25.9 -39.4 -50.9 -62.5 -72.1 -79.7 -87.4 -101.3 -120.5 -144.2 -170.8 159.5 125.6 98.1 81.9 71.2 59.7 49.8 39.8 NE721S01 NE721S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.58nH Rdx 0.06 ohms Rgx 0.71nH 0.06 ohms Lsx 0.1nH CGS_PKG 0.055pF CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -1.699 RG 7 time seconds VTOSC 0 RD 6 capacitance farads ALPHA 2.5 RS 4 inductance henries BETA 0.0254 RGMET 0 resistance ohms GAMMA 0.09 KF 1.36e-10 voltage volts GAMMADC 0.09 AF 1.74 current amps Q 1.95 TNOM 27 DELTA 1.1 XTI 3 VBI 0.8 EG 1.43 IS 1e-14 VTOTC 0 N 1.2 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 6e-12 CDS 0.18e-12 RDB 5000 CBS 1e-10 CGSO 0.7e-12 CGDO 0.055e-12 DELTA1 1.2 DELTA2 1 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 20 mA to 40 mA Date: 7/97 (1) Series IV Libra TOM Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -9/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE