DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS (VDS = 3.5 V) (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz) 0.3 +0.1 –0.05 • Low Noise Figure : NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) 1.25±0.1 2 • High Power Gain : 0.3 +0.1 –0.05 : 3 • Low VDD Use ±8*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 130*2 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C *1: RL ≥ 10 kΩ *2: Free air (1.3) 0.3 +0.1 –0.05 VG2S 0.15 +0.1 –0.05 Gate2 to Source Voltage 4 V 0 to 0.1 V ±8*1 0.4 +0.1 –0.05 18 VG1S 0.3 VDSX Gate1 to Source Voltage 0.9±0.1 Drain to Source Voltage 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.65 4 Pins Super Mini Mold : 1.25 Embossed Type Taping • Small Package 0.60 • Automatically Mounting : 2.0±0.2 • Suitable for use as RF amplifier in CATV tuner. PIN CONNECTIONS 1. 2. 3. 4. Source Drain Gate2 Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10585EJ2V0DS00 (2nd edition) (Previous No. TD-2307) Date Published August 1995 P Printed in Japan © 1993 3SK254 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. Drain to Source Breakdown Voltage BVDSX 18 Drain Current IDSX 0.1 Gate1 to Source Cutoff Voltage VG1S(off) –1.0 Gate2 to Source Cutoff Voltage VG2S(off) 0 Gate1 Reverse Current MAX. UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 5.0 mA 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V Forward Transfer Admittance |yfs| 14 18 23 mS VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 kHz Input Capacitance Ciss 2.4 2.9 3.4 pF Output Capacitance Coss 0.9 1.2 1.5 pF Reverse Transfer Capacitance Crss 0.01 0.03 pF Power Gain Gps 19 22 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA Noise Figure 1 NF1 2.0 3.0 dB f = 470 MHz Noise Figure 2 NF2 0.8 2.3 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 55 MHz IDSX Classification 2 TYP. Rank U1E Marking U1E IDSX (mA) 0.1 to 0.5 16 VDS = 3.5 V, VG2S = 3 V, VG1S = 0.5 V VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 MHz 3SK254 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 20 1.4 V 15 1.2 V 1.0 V 10 0.8 V 5 0.6 V 25 50 75 100 10 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VDS = 3.5 V 3.0 V VG2S = 3.5 V 2.5 V 2.0 V 15 10 1.5 V 5 1.0 V 0.5 1.0 1.5 2.0 2.5 40 VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V 24 3.0 V 16 2.0 V 2.5 V 8 1.0 V 0 0.5 1.5 V 1.0 1.5 2.0 VG1S – Gate1 to Source Voltage – V VG1S – Gate1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 40 2.5 5.0 VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V 24 3.0 V 16 2.5 V 8 2.0 V 1.5 V 1.0 V 0 5 VDS – Drain to Source Voltage – V 20 0 0 125 Ta – Ambient Temperature – °C |yfs| – Forward Transfer Admittance – mS 25 ID – Drain Current – mA ID – Drain Current – mA 130 mW 0 |yfs| – Forward Transfer Admittance – mS VG2S = 3 V VG1S = 1.6 V 200 Ciss – Input Capacitance – pF PD – Total Power Dissipation – mW 25 4 8 12 ID – Drain Current – mA 16 20 4.0 ID = 7 mA (at VDS = 3.5 V, VG2S = 3 V) f = 1 MHz 3.0 2.0 1.0 0 –1.0 0 1.0 2.0 3.0 4.0 VG2S – Gate2 to Source Voltage – V 3 3SK254 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 10 2.0 1.5 1.0 0.5 5 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 470 MHz GPS 10 0 –10 NF –20 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V 4 20 GPS – Power Gain – dB ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 1 MHz NF – Noise Figure – dB Coss – Output Capacitance – pF 2.5 4.0 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V 4.0 3SK254 GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads INPUT 40 pF 40 pF OUTPUT L2 L1 50 Ω 15 pF 1 000 pF 1 000 pF 15 pF 50 Ω 22 kΩ L3 1 000 pF 1 000 pF VDS VG1S L1: φ 1.2 mm U.E.W φ 5 mm 1T L2: φ 1.2 mm U.E.W φ 5 mm 1T L3: REC 2.2 µ H NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC 2.2 kΩ Ferrite Beads 1 500 pF 1 500 pF 1 000 pF INPUT 50 Ω 3.3 kΩ 27 pF 47 kΩ 47 kΩ 27 pF OUTPUT 3.3 kΩ 50 Ω 1 000 pF VG1S 5 3SK254 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2