DATA SHEET THYRISTORS 8P2SMA,8P4SMA 8 A MOLD ISOLATED SCR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 8P2SMA and 8P4SMA are P gate all diffused mold type 4.7 MAX. 10.5 MAX. thyristor granted 8 A on-state average current (TC = 88°C), with 7 ±0.2 φ 3.2 ±0.2 3.0 MAX. • 100 A surge current 2.8 ±0.2 • Mold isolated plastic package 1 • High voltage: VDRM, VRRM = 200 V (8P2SMA) 2 3 5 ±0.2 VDRM, VRRM = 400 V (8P4SMA) APPLICATIONS • Motor speed control for household appliance • Temperature control for heater and constant temperature box • Constant voltage power source and battery charger * 13.5 MIN. 17 ±0.2 FEATURES 12 ±0.2 5 ±0.1 rated voltages up to 400 V. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. • Automotive application such as regulator 0.5 ±0.1 2.5 ±0.1 SCR 1: Cathode 2: Anode 3: Gate • Various solid state relay, etc. *: TC test bench-mark Standard weight: 2 g The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17164EJ3V0DS00 (3rd edition) (Previous No. SC-2102) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1988 8P2SMA,8P4SMA MAXIMUM RATINGS Parameter Symbol 8P2SMA 8P4SMA Unit Remarks Non-repetitive Peak Reverse Voltage VRSM 300 500 V − Non-repetitive Peak Off-state Voltage VDSM 300 500 V − Repetitive Peak Reverse Voltage VRRM 200 400 V − Repetitive Peak Off-state Voltage VDRM 200 400 V − Average On-state Current IT(AV) 8 (TC = 88°C, single phase half wave, θ = 180°) A Refer to Figure 11 Effective On-state Current IT(RMS) 12.6 A and 12. ITSM 100 (f = 50 Hz, sine half wave, 1 cycle) A Refer to Figure 2. Surge On-state Current 110 (f = 60 Hz, sine half wave, 1 cycle) Fusing Current 2 ∫ iT dt 45 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5 (f ≥ 50 Hz, Duty ≤ 10%) W Refer to Figure 3. PG(AV) 0.5 W Peak Gate Forward Current IFGM 2 (f ≥ 50 Hz, Duty ≤ 10%) A − Peak Gate Reverse Voltage VRGM 10 V − Tj −40～+125 °C − Tstg −55～+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Repetitive Peak Reverse Current Symbol IRRM Conditions VRM = VRRM MIN. TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − Tj = 25°C − − 100 µA − Repetitive Peak Off-state Current IDRM VDM = VDRM − − 2 mA − On-state Voltage VTM ITM = 25 A − − 1.4 V Refer to Figure 1. Refer to Figure 4. Tj = 125°C Gate Trigger Current IGT VDM = 6 V, RL = 100 Ω − − 10 mA Gate Trigger Voltage VGT VDM = 6 V, RL = 100 Ω − − 1.5 V 0.2 − − V − − 6 − mA − − 40 − V/µs − − 100 − µs − Gate Non-trigger Voltage VGD IH Holding Current Critical Rate Rise of Off-state Voltage Circuit Commuted Turn-off Time dv/dt tq Tj = 125°C, VDM = 1 VDRM 2 VDM = 24 V, ITM = 25 A Tj = 125°C, VDM 2 = 3 VDRM Tj = 125°C, ITM = 8 A diR/dt = 15 A/µs, VR ≥ 25 V, VDM = Thermal Resistance 2 Note 2 3 VDRM, dVD/dt = 10 V/µs Rth(j-c) Junction to case DC − − 3.7 °C/W Refer to Figure 13. Rth(j-a) Junction to ambient DC − − 60 °C/W Data Sheet D17164EJ3V0DS 8P2SMA,8P4SMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC Figure 2. ITSM RATING 100 Initial Tj = 125˚C 140 ITSM - Surge On-state Current - A iT - On-state Current - A MAX. 10 Tj = 125˚C ITSM 10 ms 20 ms 120 100 60 Hz 80 50 Hz 60 40 20 25˚C 1 0 0 1 3 2 1 5 νT - On-state Voltage - V VDM = 6 V RL = 100 Ω VGT - Gate Trigger Voltage - V VFG - Gate Forward Voltage - V Figure 4. GATE CHARACTERISTIC 8 PGM = 5 W f ≥ 50 Hz Duty ≤ 10% 4 PG(AV) = 0.5 W 2 0 4 3 Tj = −40˚C 2 0˚C 25˚C 1 0 0 1.0 2.0 0 5 IFG - Gate Forward Current - A Figure 5. IGT vs. TA CHARACTERISTIC 15 20 25 30 Figure 6. VGT vs. TA CHARACTERISTIC 2.0 VGT - Gate Trigger Voltage - V 10 1 0.1 −40 10 IGT - Gate Trigger Current - mA 100 IGT - Gate Trigger Current - mA 100 5 Tj = −40 to +125˚C 6 50 N - Cycles Figure 3. GATE RATING 10 10 −20 0 20 40 60 80 100 1.0 0 −40 TA - Ambient Temperature - °C −20 0 20 40 60 80 100 TA - Ambient Temperature - °C Data Sheet D17164EJ3V0DS 3 8P2SMA,8P4SMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs. τ CHARACTERISTIC 1.0 1000 TA = 25˚C νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA TA = 25˚C 100 10 1 0.1 0.6 0.4 0.2 0 1 10 100 1000 1000 −20 0 20 40 60 80 100 PT(AV) - On-state Average Power Dissipation - W Figure 10. PT(AV) vs. IT(AV) CHARACTERISTIC 14 DC θ 0˚ 12 θ = 180˚ Conduction angle 10 120˚ 90˚ 8 60˚ 6 30˚ 4 2 0 0 2 4 6 8 10 12 14 IT(AV) - Average On-state Current - A Figure 11. TC vs. IT(AV) RATING Figure 12. TA vs. IT(AV) RATING 140 140 0˚ 120 θ Conduction angle 100 80 60 θ = 180˚ 30˚ 40 DC 60˚ 90˚ 120˚ 20 0 TA - Ambient Temperature - °C TC - Case Temperature - °C 100 Figure 9. IH vs. TA CHARACTERISTIC TA - Ambient Temperature - °C 120 100 80 θ = 60˚ 90˚ 120˚ 180˚ 60 40 20 30˚ DC 0 0 2 4 6 8 10 12 14 IT(AV) - Average On-state Current - A 4 10 τ - Pulse Width - µs 10 0 −40 1 τ - Pulse Width - µs 20 IH - Holding Current - mA 0.8 0 1.0 2.0 IT(AV) - Average On-state Current - A Data Sheet D17164EJ3V0DS 8P2SMA,8P4SMA Figure 13. Zth CHARACTERISTIC Zth - Transient Thermal Impedance - °C/W 100 Junction to ambient 10 Junction to case 1 0.1 0.01 0.1 1 10 100 1000 10000 t - Time - s Data Sheet D17164EJ3V0DS 5 8P2SMA,8P4SMA • The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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