DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3653C contains a diode and high resistivity 0.2 time during power-on. In addition, because of its compact 3 0 to 0.05 1 2 FEATURES 0.45 • Low noise: (0.26) 0.8 ±0.1 phones. 1.2 ±0.1 package and low noise, the 2SK3653C is especially suitable for compact ECMs for audio or mobile devices such as cell- 0.13 +0.1 –0.05 0.3 ±0.05 between its gates and sources, for achieving short stability 0.45 1.4 ±0.1 MAX. 0.4 −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.2 +0.1 –0 ORDERING INFORMATION PART NUMBER PACKAGE 2SK3653C 3pXSOF (0814) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V Gate to Drain Voltage VGDO −20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 °C Storage Temperature Tstg −55 to +125 °C 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18895EJ1V0DS00 (1st edition) Date Published August 2007 NS Printed in Japan 2007 2SK3653C ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS MIN. TYP. MAX. UNIT 90 200 430 μA −0.37 −1.0 V IDSS VDS = 2.0 V, VGS = 0 V Gate Cut-off Voltage VGS(off) VDS = 2.0 V, ID = 1.0 μA Forward Transfer Admittance | yfs1 | VDS = 2.0 V, ID = 30 μA, f = 1.0 kHz 300 480 μS | yfs2 | VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz 750 1300 μS Input Capacitance Ciss VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz 4.0 pF Voltage Gain GV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, −1.0 dB −108.5 dB VIN = 10 mV, f = 1 kHz Noise Voltage NV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ, A-curve IDSS CLASSIFICATION MARKING EE EF EH EJ IDSS (μA) 90 to 180 150 to 240 210 to 350 320 to 430 VOLTAGE GAIN TEST CIRCUIT VDD RL Out C NOISE VOLTAGE TEST CIRCUIT VDD RL JIS A NV (r.m.s) C 2 Data Sheet D18895EJ1V0DS 2SK3653C TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF POWER DISSIPATION DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 100 ID - Drain Current - μA dT - Derating Factor - % 120 80 60 40 VGS = 0.2 V 800 −0.2 V −0.3 V 600 0.1 V 400 0V −0.1 V 200 20 0 0 0 25 50 75 100 125 150 175 0 2 8 VDS - Drain to Source Voltage - V GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1600 IGS - Gate to Source Current - μA 6 TA - Ambient Temperature - °C 1400 ID - Drain Current - μA 30 20 10 −0.8 −0.6 −0.4 −0.2 0 0.2 10 VDS = 2.0 V 40 0.4 0.6 0.8 −10 −20 1200 1000 800 600 400 200 −30 0 -0.8 -0.6 -0.4 -0.2 −40 VGS - Gate to Source Voltage - V 0.2 0.4 0.6 0.8 1 FORWARD TRANSFER ADMITTANCE AND GATE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT 10 Ciss - Input Capacitance - pF VGS = 0 V f = 1.0 MHz 1 100 | yfs | - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 10 10 0 VGS - Gate to Source Voltage - V INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 4 VDS = 2.0 V | yfs | 1 VGS(off) 0.1 10 100 1000 IDSS - Zero Gate Voltage Drain Current - μA VDS - Drain to Source Voltage - V Data Sheet D18895EJ1V0DS 3 2SK3653C VOLTAGE GAIN vs. DRAIN CURRENT 3 −103 1 0 NV - Noise Voltage - dB VDD = 2.0 V C = 5 pF RL = 2.2 kΩ VIN = 10 mV f = 1 kHz 2 GV - Voltage Gain - dB NOISE VOLTAGE vs. DRAIN CURRENT −1 −2 −3 4 −107 −109 −111 −113 −4 −5 VDD = 2.0 V C = 5 pF RL = 2.2 kΩ −105 10 100 IDSS - Drain Current - μA 1000 −115 Data Sheet D18895EJ1V0DS 10 100 IDSS - Drain Current - μA 1000 2SK3653C • The information in this document is current as of August, 2007. 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