DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PL 5-PIN SUPER SMALL MINI MOLD (FLAT LEAD TYPE) ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) DESCRIPTION PACKAGE DRAWING (Unit: mm) The NNCD6.8PL is a low capacitance type diode developed for ESD 1.6±0.1 1.2±0.1 (Electrostatic Discharge) absorption. Based on the IEC61000-4-2 test 1 2 5 3 type) package, the product can cope with more high density 0.22±0.05 With four elements mounted in the 5-pin super mini mold (Flat lead 0.5 external interface circuit protection. 1.0±0.1 1.6±0.1 endurance of no less than 30 kV, thus making itself most suitable for 0.5 on electromagnetic interference (EMI), the diode assures an 4 FEATURES 0.05 Max. 0.5 Max. 0.13±0.05 assembling. • Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minimum endurance of 30 kV. • With four elements in the super mini mold package, the product can ELECTRODE CONNECTION achieve high density and automatic packaging. 5 4 APPLICATIONS • External interface circuit ESD absorption • Circuit for surge absorber 1 2 3 1. K1: 2. A : 3. K2: 4. K3: 5. K4: Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Tj Storage Temperature Tstg RATING UNIT 200 mW 85 (t = 10 µs, 1 pulse) W 150 o −55 to +150 o REMARK Total C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15989EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 NNCD6.8PL ELECTRICAL CHARACTERISTICS (TA = 25°C) (A - K1, A - K2, A - K3, A - K4) TYPE No. BREAKDOWN VOLTAGE Note1 CAPACITANCE REVERSE LEAKAGE Ct (pF) IR (µA) VBR (V) MIN. MAX. IT (mA) TYP. Condition MAX. ESD VOLTAGE Note2 (kV) VR (V) MIN. Condition C = 150 pF R = 330 Ω VR = 0 V NNCD6.8PL 6.2 7.1 5 2 90 f = 1 MHz 3.5 30 Contact discharge Notes 1. Tested with pulse (40 ms). 2. Based upon with IEC61000-4-2. 2 Data Sheet D15989EJ1V0DS NNCD6.8PL TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 2. IT vs. VBR CHARACTERISTICS (A - K1, A - K2, A - K3, A - K4) Figure 1. P vs. TA RATING 250 100 m TA = 25°C 10 m IT - On-state Current - A P - Power Dissipation - mW 200 150 100 50 1m 100 µ 10 µ 1µ 100 n 0 10 n 0 25 50 75 100 125 150 5 5.5 TA - Ambient Temperature - °C 6 6.5 7 7.5 8 VBR - Breakdown Voltage - V Figure 3. Ct vs. VR CHARACTERISTICS 140 TA = 25°C f = 1 MHz Ct - Capacity between pins - pF 120 100 80 60 40 20 0 0.01 0.1 1 10 VR - Reverse Voltage - V Data Sheet D15989EJ1V0DS 3 NNCD6.8PL Figure 4. SURGE REVERSE POWER RATING 10000 PRSM PRSM - Surge Reverse Power - W TA = 25˚C Non-repetitive 1000 tr 100 10 1 1µ 10 µ 1m 100 µ tr - Pulse Width - s 10 m 100 m Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 Zth - Transient Thermal Impedance - °C/W 625˚C/W 100 10 When using glass epoxy board of 10 x 7.5 x 0.75 mm 1 100 µ 4 1m 10 m 100 m Time - s 1 Data Sheet D15989EJ1V0DS 10 100 1000 NNCD6.8PL • The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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