DATA SHEET THYRISTORS 2S2M, 2S4M 2 A HIGH-SPEED SWITCHING SCR The 2S2M and 2S4M are P-gate fully diffused mold SCRs PACKAGE DRAWING (UNIT: mm) with an average on-current of 2 A. The repeat peak off-voltages (and reverse voltages) are 200 V and 400 V. FEATURES • This transistor is designed for high-speed switching and is deal for use in commercial frequencies, high-frequency pulse applications, and inverter applications. • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible. • Employs flame-retardant epoxy resin (UL94V-0). APPLICATIONS Consumer electronic euipments, ignitors of devices for light Electrode connection <1>Cathode <2>Anode <3>Gate Standard weight: 1.4 indutry, inverter, and solenoid valve drives *TC test bench-mark ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Non-repetitive peak reverse voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-voltage Average on-state current Surge on-state current High-frequency peak on-state current Fusing current Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate reverse voltage Junction temperature Storage temperature Symbol VRSM VDSM VRRM VDRM IT(AV) ITSM ITRM ∫ it dt dIT/dt PGM PG(AV) IFGM VRGM Tj Tstg 2 2S2M 2S4M 300 500 300 500 200 400 200 400 2 (Tc = 77°C, Single half-wave, θ = 180°) 20 (f = 50 Hz, Sine half-wave, 1 cycle) 15 (Tc = 65°C, f = 10 kp.p.s, tp = 10 µs) 1.6 (1 ms≤t≤10 ms) 50 0.5 (f≥50 Hz, Duty≤10%) 0.1 0.2 (f≥50 Hz, Duty≤10%) 6 −40 to +125 −55 tp +150 Ratings Unit V V V V A A A A2s A/µs W W A V °C °C RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Refer to Figure 6 snd 7. Refer to Figure 2. − − − − − − − − The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13535EJ2V0DS00 (2nf edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2S2M, 2S4M ELECTRICAL CHARACTERISTICS (Tj = 25°°C, RGK = 1 kΩ Ω) Parameter Symbol Conditions Specifications MIN. − Tj = 125°C 200 Tj = 25°C 10 µA − Tj = 125°C 200 V Refer to Figure 1. − 2.2 V Refer to Figure 9. − − 0.8 µA Refer to Figure 8. − − 300 V − 0.2 − − V − 10 − − V/µs − − 10 mA − 15 µs Repetitive peak reverse current IRRM On voltage VTM Tj = 25°C, ITM = 4 A − Gate trigger voltage VGT VDM = 6 V, RL = 100 Ω Gate trigger current IGT VDM = 6 V, RL = 100 Ω VGD Tj = 125°C, VDM = 12 VDRM dV/dt Tj = 125°C, VDM = 23 VDRM Critical rate of-rise of offstate voltage µA MAX. 10 IDRM VRM = VRRM Remarks Tj = 25°C Repeat peak off-state current Gate non-trigger voltage VDM = VDRM TYP. Unit Holding current IH Tj = 25°C, VD = 24 V − Commutating turn-off time Tq Tj = 125°C, IT = 2 A VDM = 23 VDRM, VR = 50 V − Turn-on time Tgt dV/dt = 10 V/µs Tj = 125°C, VDM = 23 VDRM − − − 2 µs − °C/W Refer to Figure 13. ITM = 30 A IG = 5 mA, t1G = 5 µs Thermal resistance Rth(j-c) Junction-to-case DC − − 10 Rth(j-a) Junction-to-ambient DC − − 75 TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D13535EJ2V0DS 2S2M, 2S4M Data Sheet D13535EJ2V0DS 3 2S2M, 2S4M 4 Data Sheet D13535EJ2V0DS 2S2M, 2S4M [MEMO] Data Sheet D13535EJ2V0DS 5 2S2M, 2S4M • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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