DATA SHEET SURGE ABSORBER DEVICES NSAD500S ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-70 PACKAGE PACKAGE DRAWING (Unit: mm) DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0, 1.25 ± 0.1 IEEE1394, 100B, etc.). 1 3 0.3 +0.1 −0 protection. 0.65 making itself most suitable for external high signal interface circuit 2 0.65 2.0 ± 0.2 (EMI), the devices assures an endurance of no less than 8 kV, thus 0.3 +0.1 −0 Based on the IEC 61000-4-2 test on electromagnetic interference FEATURES 0.9 ± 0.1 0.15 +0.1 −0.05 0.3 Marking • Base on the electrostatic discharge immunity test (IEC 61000-4-2) product assures the minimum endurance of 8 kV. • Capacitance: 3.5 pF TYP. 0 to 0.1 It’s an extraordinarily small capacitance. • With 2 elements mounted (common anode). Mounted in the SC-70 package, the products can achiever high density and automatic packaging. ELECTRODE CONNECTION APPLICATIONS • USB2.0, IEEE1394, 100B external interface circuit ESD protection. K2 2 A 3 K1 1 1. K1: Cathode 1 2. K2: Cathode 2 3. A: Anode (common) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg RATING UNIT 150 mW 2 (t = 10 µs, 1 pulse) REMARK Total W 150 o C −55 to +150 o C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16405EJ1V0DS00 (1st edition) Date Published March 2003 NS CP(K) Printed in Japan 2003 NSAD500S ELECTRICAL CHARACTERISTICS (TA = 25°C) (A to K1, A to K2) BREAK OVER CAPACITANCE REVERSE VOLTAGE Ct (pF) CURRENT PARAMETER Note (kV) IR (µA) VBO (V) MIN. ESD TYP. TYP. Condition MAX. <REFERENCE> FORWARD BREAK OVER VF (V) MIN. Condition VOLTAGE C = 150 pF R = 330 Ω VR = 0 V NSAD500S 5.3 8 0.1 3.5 f = 1 MHz 3.0 8 Contact discharge Note Biased upon with IEC 61000-4-2. 2 Data Sheet D16405EJ1V0DS 10 V TYP. NSAD500S TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 1. I vs. VBO CHARACTERISTICS 250 200 150 I - Current - mA 100 VBO side 50 0 -15 -10 -5 -50 0 5 10 15 VF side -100 -150 -200 -250 VBO - Break Over Voltage - V Figure 2. Ct vs. V CHARACTERISTICS 5 f = 1 MHz 4.5 4 Ct - Capacitance - pF 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 V - Voltage - V Data Sheet D16405EJ1V0DS 3 NSAD500S Figure 3. It vs. V CHARACTERISTICS 20 15 It - Reverse Current - nA 10 5 −8 −6 −4 −2 0 0 −5 −10 −15 −20 V - Voltage - V 4 Data Sheet D16405EJ1V0DS 2 4 6 8 NSAD500S • The information in this document is current as of March, 2003. The information is subject to change without notice. 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