NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS (Units in mm) FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX. Drain 1.0 MAX. Drain 4.4 MAX. 0.6±0.15 5.7 MAX. Gate Source 0.8±0.15 • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX 1.5±0.2 Source 0X00 1 • SINGLE SUPPLY: 2.8 to 6 V 4.2 MAX. W • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz 0.4±0.15 0.8 MAX. 5.7 MAX. 0.2±0.1 0.9±0.2 DESCRIPTION 3.6±0.2 APPLICATIONS NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. • DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver • ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets • OTHERS: W-LAN Short Range Wireless Retail Business Radio Special Mobile Radio ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE552R479A Electrical DC Characteristics Functional Characteristics PACKAGE OUTLINE SYMBOLS POUT GL ηADD ID CHARACTERISTICS Output Power 79A UNITS MIN TYP dBm 24.0 26.0 Linear Gain dB Power Added Efficiency % MAX f = 2.45 GHz, VDS = 3.0 V, IDSQ = 200 mA (RF OFF) Pin = 19 dBm, except Pin = 10 dBm for linear gain 11.0 35 TEST CONDITIONS 45 Drain Current A IGSS Gate-to-Source Leakage Current nA 100 VGS = 5.0 V IDSS Saturated Drain Current (Zero Gate Voltage Drain Voltage) nA 100 VDS = 6.0 V VTH Gate Threshold Voltage V 1.9 VDS = 3.5 V, IDS = 1 mA gm BVDSS RTH Transconductance S Drain-to-Source Breakdown Voltage V Thermal Resistance °C/W 230 1 1.4 0.4 15 VDS = 3.5 V, IDS = 100 mA 18 IDSS = 10 μA 10 Channel-to-Case Notes: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE552R479A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS TYP MAX VDS Drain Supply Voltage V 15.0 VDS Drain to Source Voltage V 3.0 6.0 VGS Gate Supply Voltage V 5.0 VGS Gate Supply Voltage V 2.0 3.0 IDS Drain Current mA 300 IDS Drain Current1 mA 200 500 IDS Drain Current (Pulse Test) 600 PIN Input Power2 dBm 19 25 mA 2 PT Total Power Dissipation W 10 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty cycle 50%, Ton ≤ 1 s. Notes: 1. Duty cycle 50%, Ton ≤ 1 s. 2. f = 2.45 GHz, VDS = 3.0 V. LARGE SIGNAL IMPEDANCE (VDS = 3.0 V, ID = 200 mA, f = 2.45 GHz, Pout = 400 mW) Zin (Ω) ZOL (Ω) 1 2.45 2.96 −j7.78 3.36 −j8.42 Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency. ORDERING INFORMATION PART NUMBER FREQUENCY (GHz) QTY NE552R479A-T1A-A • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 5 kpcs/Reel TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. DRAIN VOLTAGE 1.0 20 Drain Current, ID (A) Total Power Dissipation, PD (W) 25 15 RTH = 10°C/W 10 3.50 0.8 3.25 0.6 3.00 2.75 0.4 2.50 2.25 0.2 5 0 Gate Voltage (V) 3.75 2.20 1.75 0.0 0 25 50 75 100 125 Case Temperature, TC (°C) 150 0.00 2.0 4.0 6.0 Drain Voltage, VD (V) 8.0 10.0 NE552R479A TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER 750 75 Pout 20 ηd 15 ηadd 10 500 50 250 25 Ids 15 20 ηadd 15 Ids ηadd Ids 10 25 3 2 750 75 50 500 25 250 20 IM3 -30 IM5 -40 -50 -60 0 -70 25 5 20 15 10 25 30 Average Two Tone Output Power, Pout (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE 30 20 1000 100 750 75 500 50 250 25 ηd ηadd 15 Ids 10 0 5 10 15 Input Power,Pin (dBm) 20 25 0 Output Power, Pout (dBm) Pout Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 1250 25 5 0 4 Input Power,Pin (dBm) Frequency = 2.0 GHz Vds = 3.0 V Idq = 150 mA 0 250 Frequency = 2.45 GHz ∆ Frequency = 1 MHz Vds = 3.0 V Idq = 200 mA -20 IMD,(dBC) 100 0 15 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Ids(mA) 1000 Ids(mA) Output Power, Pout (dBm) 15 30 Output Power, Pout (dBm) -10 ηd 5 50 IMD vs. TWO TONE OUTPUT POWER Pout 20 0 500 Gate to Source Voltage, Vgs (V) 25 5 1 0 1250 10 75 0 5 25 OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER Frequency = 2.45 GHz Vds = 3.0 V Idq = 200 mA 750 ηd Input Power,Pin (dBm) 30 100 1250 Frequency = 2.0 GHz Vds = 3.0 V Pout Pin = 19 dBm 25 20 ηd 1000 100 750 75 500 50 250 25 ηadd 15 Ids 10 5 0 1 2 3 Gate to Source Voltage, Vgs (V) 0 4 0 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 10 1000 Ids(mA) 5 0 20 10 0 0 5 Pout 25 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 100 Output Power, Pout (dBm) 1000 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 25 1250 Frequency = 2.45 GHz Vds = 3.0 V Pin = 19 dBm Ids(mA) 30 1250 Frequency = 2.45 GHz Vds = 3.0 V Idq = 100 mA Ids(mA) Output Power, Pout (dBm) 30 OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE NE552R479A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j10 0 120˚ j100 j25 S22 S11 10 90˚ S21 60˚ 150˚ 30˚ S12 100 50 25 180˚ 0 -j10 Coordinates in Ohms Frequency in GHz VD = 2.4 V, ID = 50 mA -j100 -j25 0˚ -150˚ -30˚ -120˚ -90˚ -j50 -60˚ NE552R479A VD = 2.4 V, ID = 50 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 S11 MAG 0.877 0.806 0.775 0.764 0.760 0.765 0.771 0.781 0.792 0.805 0.816 0.829 0.838 0.848 0.855 0.861 0.866 0.872 0.877 0.883 0.889 0.895 0.901 0.905 0.909 0.909 0.911 0.910 0.912 0.912 0.915 0.916 0.919 0.920 0.922 0.923 0.924 0.924 0.925 0.925 S21 ANG - 70.3 -108.8 -129.7 -142.5 -151.0 -157.3 -162.3 -166.4 -170.0 -173.2 -176.0 -178.7 178.6 176.4 174.2 172.2 170.3 168.5 166.8 165.2 163.8 162.3 161.1 159.8 158.8 157.8 157.0 156.3 155.7 155.1 154.8 154.2 153.8 153.4 153.1 153.0 153.0 153.1 153.5 154.1 Note: 1. Gain Calculation: MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG 13.863 9.339 6.708 5.130 4.102 3.378 2.846 2.437 2.113 1.854 1.644 1.458 1.304 1.172 1.057 0.958 0.871 0.795 0.729 0.671 0.619 0.572 0.531 0.493 0.459 0.427 0.399 0.373 0.350 0.329 0.311 0.294 0.278 0.263 0.251 0.239 0.228 0.217 0.208 0.200 S12 ANG 135.4 111.6 97.4 87.2 79.2 72.3 66.1 60.6 55.5 50.6 46.2 41.7 37.5 33.7 30.0 26.5 23.3 20.3 17.3 14.6 11.9 9.3 6.9 4.5 2.2 0.1 - 1.9 - 3.8 - 5.5 - 7.2 - 8.8 - 10.4 - 11.9 - 13.4 - 14.8 - 16.1 - 17.4 - 18.7 - 19.9 - 21.2 MAG 0.042 0.057 0.061 0.062 0.061 0.060 0.059 0.057 0.055 0.053 0.051 0.048 0.046 0.044 0.041 0.039 0.037 0.035 0.033 0.031 0.029 0.027 0.026 0.024 0.023 0.021 0.019 0.018 0.016 0.015 0.014 0.012 0.011 0.010 0.008 0.007 0.006 0.005 0.004 0.003 S22 ANG 46.6 23.4 9.6 0.6 - 7.0 - 13.0 - 18.2 - 23.0 - 27.3 - 31.4 - 34.8 - 38.5 - 41.8 - 44.9 - 47.6 - 50.3 - 52.4 - 54.4 - 56.7 - 58.7 - 60.2 - 62.1 - 63.8 - 65.6 - 67.3 - 68.8 - 71.4 - 74.0 - 74.2 - 74.8 - 75.5 - 77.4 - 77.8 - 79.9 - 80.8 - 78.5 - 75.4 - 73.6 - 70.4 - 50.4 MAG 0.452 0.569 0.614 0.641 0.663 0.681 0.699 0.717 0.734 0.751 0.770 0.781 0.793 0.806 0.818 0.830 0.841 0.851 0.861 0.870 0.878 0.885 0.892 0.898 0.903 0.909 0.914 0.919 0.924 0.927 0.932 0.935 0.939 0.943 0.948 0.951 0.953 0.957 0.960 0.961 ANG -104.4 -132.8 -145.1 -151.6 -155.4 -158.2 -160.3 -161.9 -163.4 -164.8 -166.0 -167.7 -169.1 -170.4 -171.7 -173.1 -174.5 -175.9 -177.4 -178.8 179.7 178.2 176.8 175.2 173.8 172.3 170.8 169.1 167.5 166.0 164.4 162.9 161.3 159.6 157.9 156.1 154.1 152.1 149.6 146.8 K MAG1 0.05 0.05 0.07 0.09 0.12 0.14 0.17 0.20 0.22 0.23 0.23 0.27 0.31 0.33 0.38 0.43 0.49 0.56 0.61 0.65 0.68 0.74 0.76 0.82 0.89 1.02 1.19 1.41 1.55 1.82 1.90 2.19 2.41 2.77 3.15 3.72 4.29 4.86 6.62 9.58 (dB) 25.15 22.13 20.43 19.17 18.24 17.49 16.85 16.32 15.86 15.46 15.11 14.80 14.53 14.29 14.07 13.89 13.72 13.61 13.49 13.39 13.29 13.22 13.14 13.07 13.05 12.11 10.52 9.38 8.93 8.26 8.13 7.63 7.39 7.11 6.98 6.76 6.58 6.47 6.36 5.98 NE552R479A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j10 0 120˚ j100 j25 S22 S11 60˚ 150˚ 30˚ S12 10 25 100 50 -j50 NE552R479A VD = 3.5 V, ID = 200 mA FREQUENCY S11 MAG 0.881 0.833 0.813 0.805 0.800 0.801 0.802 0.807 0.812 0.820 0.827 0.836 0.840 0.847 0.851 0.854 0.857 0.861 0.865 0.870 0.875 0.880 0.885 0.889 0.892 0.893 0.895 0.894 0.895 0.896 0.899 0.900 0.903 0.904 0.906 0.907 0.909 0.908 0.910 0.910 Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 200 mA -j100 -j25 180˚ 0 -j10 GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 90˚ S21 S21 ANG - 80.4 -119.4 -139.1 -151.0 -158.9 -164.7 -169.3 -173.1 -176.3 -179.2 178.4 175.9 173.6 171.8 169.8 168.1 166.4 164.9 163.5 162.1 160.9 159.6 158.5 157.5 156.6 155.7 155.0 154.5 153.9 153.5 153.2 152.8 152.4 152.0 151.9 151.8 151.8 152.1 152.5 153.1 Note: 1. Gain Calculation: MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG 17.975 11.643 8.264 6.317 5.073 4.206 3.577 3.093 2.711 2.405 2.158 1.936 1.752 1.592 1.452 1.331 1.223 1.127 1.044 0.969 0.902 0.841 0.786 0.736 0.689 0.646 0.607 0.571 0.540 0.511 0.485 0.460 0.438 0.417 0.398 0.381 0.365 0.350 0.337 0.325 0˚ -150˚ -30˚ -120˚ S12 ANG 132.9 110.6 98.2 89.6 82.9 77.2 72.1 67.4 63.1 58.9 55.1 51.1 47.4 43.9 40.4 37.3 34.2 31.3 28.4 25.8 23.1 20.5 18.0 15.6 13.3 11.0 9.0 6.9 5.0 3.2 1.5 - 0.3 - 1.9 - 3.6 - 5.1 - 6.7 - 8.3 - 9.7 - 11.2 - 12.8 MAG 0.030 0.039 0.042 0.042 0.042 0.042 0.041 0.040 0.039 0.038 0.037 0.036 0.034 0.033 0.032 0.030 0.029 0.027 0.026 0.025 0.024 0.023 0.022 0.020 0.019 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.005 0.005 -90˚ S22 ANG 44.0 22.1 10.8 3.3 - 1.9 - 6.9 - 10.8 - 14.2 - 17.7 - 20.7 - 23.6 - 26.4 - 28.9 - 30.9 - 33.7 - 35.5 - 37.3 - 39.0 - 40.7 - 41.6 - 43.3 - 44.3 - 45.3 - 46.9 - 48.5 - 49.6 - 50.5 - 53.1 - 52.4 - 50.3 - 50.7 - 51.9 - 49.9 - 47.2 - 44.6 - 38.1 - 33.2 - 26.9 - 15.3 - 4.5 MAG 0.490 0.623 0.666 0.689 0.704 0.714 0.725 0.735 0.744 0.754 0.767 0.773 0.781 0.790 0.799 0.808 0.817 0.824 0.833 0.841 0.849 0.855 0.862 0.869 0.875 0.881 0.886 0.891 0.897 0.902 0.907 0.911 0.915 0.920 0.925 0.928 0.932 0.936 0.940 0.941 ANG -134.7 -151.5 -159.4 -163.6 -166.2 -168.1 -169.4 -170.5 -171.5 -172.3 -173.0 -174.2 -175.1 -176.0 -176.9 -177.8 -178.8 -179.9 178.9 177.8 176.7 175.5 174.2 172.9 171.6 170.3 169.0 167.5 166.1 164.7 163.2 161.7 160.3 158.7 157.0 155.3 153.4 151.5 149.0 146.3 -60˚ K MAG1 0.06 0.06 0.08 0.11 0.14 0.17 0.21 0.24 0.26 0.28 0.29 0.32 0.37 0.41 0.45 0.51 0.58 0.66 0.69 0.76 0.81 0.85 0.88 0.96 1.03 1.17 1.32 1.61 1.81 2.08 2.11 2.44 2.77 3.09 3.35 3.93 4.17 4.98 4.88 4.94 (dB) 27.71 24.72 22.98 21.78 20.83 20.04 19.42 18.89 18.42 18.03 17.66 17.37 17.06 16.86 16.63 16.44 16.28 16.15 15.97 15.91 15.82 15.69 15.62 15.60 14.40 13.05 12.20 11.19 10.71 10.17 10.09 9.58 9.33 9.09 8.98 8.65 8.53 8.21 8.20 7.84 NE552R479A APPLICATION CIRCUIT (2.40-2.48 GHz) P.C.B. LAYOUT (Units in mm) 79A PACKAGE +VG +VD J3 4.0 J4 C3 C9 C11 1.7 C2 C8 C10 P1 GND 1.0 Gate 0.5 5.9 C12 1.2 Drain C13 R1 C14 C5 C1 U1 J2 C4 C6 RF IN OU C7 A W IN 0X001 J1 Source RF OUT Through hole φ 0.2 × 33 0.5 er=4.2 6.1 TAB Note: Use rosin or other material to prevent solder from penetrating through-holes. 500855B t=0.028 0.5 J4 J3 +Vd +Vg C13 C11 C9 C2 C3 C8 C12 C10 R1 C1 J1 C5 RF OUTPUT RF INPUT NE552R479A C6 C14 C4 C7 NE552R479A PARTS LIST 1 1 4 2 1 2 2 1 2 2 2 1 1 1 2 1 J2 600S3R3CW TF-100637 C14 MCH185A101JK MCR03J200 600S2R7BW 600S5R6CW 600S1R5CW TAJB475K010R MCH215F104ZP 0805CG102J9BB04 NE552R479A 703401 1250-003 2052-5636-02 FD-500855B C2,C3 R1 C4,C7 C1,C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB 0603 3.3 pF CAP ATC TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD 0603 100pF CAP ROHM 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 5.6pF CAP ATC 0805 1.5pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP ROHM 0805 1000 pF CAP PHIL6 IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 17 15 14 13 12 11 10 9 8 7 5 4 3 2 1 NE552R479A TYPICAL APPLICATION CIRCUIT PERFORMANCE (TA = 25°C) OUTPUT POWER vs. INPUT POWER -10 f = 2.44 GHz 32 -20 30 -25 28 26 24 3.6 V, 100mA 3.6 V, 300mA 5 V, 100mA 5 V, 300mA 8 V, 100mA 8 V, 300mA 22 20 18 f = 2.44 GHz -15 IM3 (dBc) Output Power, POUT (dBm) 34 IM3 vs. OUTPUT POWER 8 10 12 14 16 18 20 Input Power, PIN (dBm) 22 24 -30 -35 -40 3.6 V, 100mA 3.6 V, 300mA 5 V, 100mA 5 V, 300mA 8 V, 100mA 8 V, 300mA -45 -50 -55 -60 6 8 10 12 14 16 18 20 22 24 26 Output Power, POUT (dBm), Each Tone NE552R479A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/11/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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