M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features • • • MP4T80200 Die Outline MP4T80200 High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) B a se B o n d P a d E m itte r B o n d Pad Description The MP4T80200 series of our medium power high gain npn transistor has a power output of 1.0 watts at 900 MHz when operated in a class C environment. The typical applied voltage is from 6 to 10 volts, collector to emitter, with a 600mA max collector current. B a lla s t R e s is to r s A c tiv e D e v ic e A reas (4) The MP4T802 family of transistors is available in chip (MP4T80200), 200mil BEO (MP4T802-510). Die size = 450 X 750 uM Bottom of die is collector. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avenue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 8 Volt, Mediam Power Transistor MP4T802 Series Electrical Specifications at 25°C Symbol Parameters fT Gain Bandwidth Product P out Power Output Class C Test Conditions VCE = 8V IC = 100 mA VCE = 8V IC = 420 mA f = .9 GHz Units GHz MP4T80200 Chip 6 typ. MP4T802510 200mil BEO 4 Typ 1.0 typ. 1.0 typ. W Maximum Ratings at 25°C Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissipation Symbol VCBO VCEO VEBO IC Tj Maximum Rating 25 V 12 V 1.5 V 600 mA 200°C TSTG -65°C to +200°C -65°C to +125°C 6.0W1 PD Electrical Specifications at 25°C Parameters Collector Cut-off Current Conditions VCB = 8 V IE = 0 VEB = 1 V IC = 0 VCE = 8 V IC = 200 mA Emitter Cut-off Current Forward Current Gain Symbol ICBO Min. Typ. Max. 100 Units nA IEBO 1 µA hFE 20 100 200 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avenue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 8 Volt, Mediam Power Transistor MP4T802 Series 2 0.030 0.762 3 1 4 0.30 7.62 TYP. 0.060 1.525 0.053 1.35 0.132 5.42 DIA 0.003 0.076 0.205 5.21 DIA 0.020 0.51 Notes: (unless otherwise specified) 1. Dimensions are in / mm 2. Tolerance: in .xxx = ±.005; mm .xx = ±.13 Pin Configuration Pin Number 1 2&4 3 Pin Description Collector Emitter Base Ordering Information Model No. MP4T802510 Package BeO Ceramic Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 3 576 Charcot Avenue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440