MPLUSE MP4T80200

M-Pulse Microwave
8 Volt, NPN Transistor
Medium Power
Features
•
•
•
MP4T80200
Die Outline MP4T80200
High Performance at VCE = 8V
1.0 watts Class C at 900 MHz
High fT (6GHz)
B a se B o n d P a d
E m itte r B o n d
Pad
Description
The MP4T80200 series of our medium power high gain npn
transistor has a power output of 1.0 watts at 900 MHz when
operated in a class C environment. The typical applied
voltage is from 6 to 10 volts, collector to emitter, with a
600mA max collector current.
B a lla s t
R e s is to r s
A c tiv e D e v ic e
A reas (4)
The MP4T802 family of transistors is available in chip
(MP4T80200), 200mil BEO (MP4T802-510).
Die size = 450 X 750 uM
Bottom of die is collector.
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avenue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
8 Volt, Mediam Power Transistor
MP4T802 Series
Electrical Specifications at 25°C
Symbol
Parameters
fT
Gain Bandwidth
Product
P out
Power Output
Class C
Test
Conditions
VCE = 8V
IC = 100
mA
VCE = 8V
IC = 420
mA
f = .9 GHz
Units
GHz
MP4T80200
Chip
6 typ.
MP4T802510
200mil BEO
4 Typ
1.0 typ.
1.0 typ.
W
Maximum Ratings at 25°C
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Tj
Maximum Rating
25 V
12 V
1.5 V
600 mA
200°C
TSTG
-65°C to +200°C
-65°C to +125°C
6.0W1
PD
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Conditions
VCB = 8 V
IE = 0
VEB = 1 V
IC = 0
VCE = 8 V
IC = 200 mA
Emitter Cut-off Current
Forward Current Gain
Symbol
ICBO
Min.

Typ.

Max.
100
Units
nA
IEBO


1
µA
hFE
20
100
200

Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avenue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
8 Volt, Mediam Power Transistor
MP4T802 Series
2
0.030
0.762
3
1
4
0.30
7.62
TYP.
0.060
1.525
0.053
1.35
0.132
5.42
DIA
0.003
0.076
0.205
5.21
DIA
0.020
0.51
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
1
2&4
3
Pin Description
Collector
Emitter
Base
Ordering Information
Model No.
MP4T802510
Package
BeO Ceramic
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avenue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440