NEC NE68939

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
NE68939
OUTLINE DIMENSIONS (Units in mm)
• OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,
Duty 1/8
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
• 4 PIN MINI MOLD PACKAGE: NE68939
2.9 ± 0.2
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2
0.95
3
1.9
0.85
4
1
DESCRIPTION
1) Collector
2) Emitter
3) Base
+0.10
0.6 -0.05
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver
stage in a 1.9 GHZ digital cordless telephone (DECT or PHS).
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold
package and is available on tape and reel.
4) Emitter
+0.2
1.1 -0.1
0.8
0.16 +0.10
-0.06
5˚
5˚
0 to 0.1
The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability
and consistent superior performance.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PART NUMBER
PACKAGE CODE
SYMBOLS
PARAMETERS
NE68939
39
UNITS
ICBO
Collector Cutoff Current, VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current, VEB = 1 V, IC = 0
µA
hFE
DC Current Gain, VCE = 3.6 V, IC = 100 mA
P-1
Output Power
VCE = 3.6 V, f = 1.9 GHZ
ICq = 2 mA (Class AB)
Duty 1/8
Gp
Power Gain
ηC
Collector Efficiency
TON
Maximum Device On Time
MIN
TYP
MAX
2.5
2.5
30
dBm
24.5
dB
6.5
8
%
50
62
MS
10.0
California Eastern Laboratories
NE68939
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
6.0
VEBO
Emitter to Base Voltage
V
2.0
IC
Collector Current mA
150
PT
Total Power Dissipation
mW
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
2.4
3
2
200 (CW)
1.9
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
1.0
1
4
1.0
APPLICATION
ORDERING INFORMATION
(1) TX Amplifier for DECT
+3 dBm
PART NUMBER
NE68939-T1
Po = 27 dBm
NE68839
NE68939
QTY
3K/REEL
Note:
1. Lead material: Cu
Lead plating: PbSn
NE69039
(2) TX Amplifier for PHS
-14 dBm
P1 = 22 dBm
ZIN (Ω), ZOUT (Ω) DATA
j50
µPC2771T
NE68939
NE69039
j100
j25
OUTPUT POWER, COLLECTOR
EFFICIENCY, COLLECTOR CURRENT
AND POWER GAIN VS. INPUT
POWER
j10
ZIN
30
f = 1.9 GHZ, VCC = 3.6V
IC = 1mA (Duty 1/8)
Pout
20
80
ηC
60
40
15
IC
20
0
8
7
10
GP
6
5
5
4
5
10
15
20
30
20
10
0
Power Gain, Gp
(dB)
Output Power, Pout (dBm)
25
0
ZOUT
-j10
Collector Currents, IC (mA)
Collector
Efficency, ηC (%)
0
-j100
-j25
-j50
Z OUT
Z IN
25
Input Power, Pin (dBm)
TYPICAL DATA
f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8
P1dB
24.5
IMPEDANCE LOOKING INTO DEVICE
VCC = 3.6 V, ICQ = I mA, CLASS AB
dbm
FREQUENCY
(GHZ)
(Ω)
ZIN
ηC
62
%
IC
15
mA
1.9
7.85+j5.62
GL
9.0
db
0.9
3.1+j11.6
EXCLUSIVE NORTH AMERICAN AGENT FOR
ZOUT
(Ω)
21.9-j11.6
5.3-j5.7
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE