PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS (Units in mm) • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939 2.9 ± 0.2 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2 0.95 3 1.9 0.85 4 1 DESCRIPTION 1) Collector 2) Emitter 3) Base +0.10 0.6 -0.05 The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. 4) Emitter +0.2 1.1 -0.1 0.8 0.16 +0.10 -0.06 5˚ 5˚ 0 to 0.1 The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE SYMBOLS PARAMETERS NE68939 39 UNITS ICBO Collector Cutoff Current, VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current, VEB = 1 V, IC = 0 µA hFE DC Current Gain, VCE = 3.6 V, IC = 100 mA P-1 Output Power VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA (Class AB) Duty 1/8 Gp Power Gain ηC Collector Efficiency TON Maximum Device On Time MIN TYP MAX 2.5 2.5 30 dBm 24.5 dB 6.5 8 % 50 62 MS 10.0 California Eastern Laboratories NE68939 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9.0 VCEO Collector to Emitter Voltage V 6.0 VEBO Emitter to Base Voltage V 2.0 IC Collector Current mA 150 PT Total Power Dissipation mW Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 3 2 200 (CW) 1.9 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1.0 1 4 1.0 APPLICATION ORDERING INFORMATION (1) TX Amplifier for DECT +3 dBm PART NUMBER NE68939-T1 Po = 27 dBm NE68839 NE68939 QTY 3K/REEL Note: 1. Lead material: Cu Lead plating: PbSn NE69039 (2) TX Amplifier for PHS -14 dBm P1 = 22 dBm ZIN (Ω), ZOUT (Ω) DATA j50 µPC2771T NE68939 NE69039 j100 j25 OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER j10 ZIN 30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) Pout 20 80 ηC 60 40 15 IC 20 0 8 7 10 GP 6 5 5 4 5 10 15 20 30 20 10 0 Power Gain, Gp (dB) Output Power, Pout (dBm) 25 0 ZOUT -j10 Collector Currents, IC (mA) Collector Efficency, ηC (%) 0 -j100 -j25 -j50 Z OUT Z IN 25 Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB 24.5 IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = I mA, CLASS AB dbm FREQUENCY (GHZ) (Ω) ZIN ηC 62 % IC 15 mA 1.9 7.85+j5.62 GL 9.0 db 0.9 3.1+j11.6 EXCLUSIVE NORTH AMERICAN AGENT FOR ZOUT (Ω) 21.9-j11.6 5.3-j5.7 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE