PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS (Units in mm) FEATURES • • +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance +0.1 1.0 –0.05 0.7 3 3 +0.1 0.2 –0.05 0.35 HIGH COLLECTOR CURRENT: IC MAX = 100 mA 2 1 0.1 0.1 DESCRIPTION +0.1 0.15 –0.05 0.2 0.2 The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles. Bottom View +0.1 0.125 –0.05 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE856M13 2SC5614 M13 UNITS MIN GHz 3 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB |S21E|2 hFE2 Forward Current Gain at VCE = 3 V, IC = 7 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF TYP 4.5 1.4 7 MAX 2.5 10 80 145 1 1 0.7 1.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE856M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 Collector Current mA 100 PT2 Total Power Dissipation mW 140 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 IC Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 500 DC Forward Current Gain, hFE Collector Current, IC (mA) VCE = 10 V 80 60 40 20 300 200 100 70 50 30 20 10 0 2 4 6 8 10 12 Collector to Emitter Voltage, VCE (V) EXCLUSIVE NORTH AMERICAN AGENT FOR 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/09/2000