NEC NE25118

GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
NE25118
POWER GAIN AND NOISE FIGURE
vs.
DRAIN TO SOURCE VOLTAGE
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
GPS
10
• HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
• LOW PACKAGE HEIGHT: 1.0 mm MAX
Power Gain, GPS (dB)
20
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10
f = 900 MHz
NF
0
0
0
DESCRIPTION
5
Noise Figure, NF (dB)
• LOW CRSS: 0.02 pF (TYP)
5
10
Drain to Source Voltage, VDS (V)
The NE25118 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a 4 pin super mini-mold
package, (SOT-343 type). Maximum package height of 1.0
mm makes the NE25118 an ideal device for PCMCIA card
applications.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
PARAMETERS AND CONDITIONS
NE25118
18
UNITS
MIN
NF
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
dB
GPS
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
dB
16
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
V
13
mA
5
BVDSX
IDSS
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
TYP
MAX
1.1
2.5
20
20
40
VG1S (OFF)
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
V
-3.5
VG2S (OFF)
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
V
-3.5
IG1SS
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
µA
10
IG2SS
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
µA
10
|YFS|
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
mS
18
25
35
CISS
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
pF
0.5
1.0
1.5
CRSS
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
pF
0.02
0.03
California Eastern Laboratories
NE25118
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
VDS
Drain to Source Voltage
V
13
VG1S
Gate 1 to Source Voltage
V
-4.5
10
25
RATINGS
VDS = 5 V
VG2S = 1 V
f = 900 MHz
ID
V
Drain Current
-4.5
mA
PT
Total Power Dissipation
TCH
TSTG
IDSS
mW
120
Channel Temperature
°C
125
Storage Temperature
°C
-55 to +125
15
GPS
5
10
5
NF
0
0
Note:
1. Operation in excess of anyone of these parameters may result
in
permanent damage.
0
5
10
Drain Current, ID (mA)
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
250
30
200
Drain Current, ID (mA)
Total Power Dissipation, PT (mW)
VDS = 5V
FREE AIR
150
120
100
50
VG2S = 1.0V
20
0.5 V
10
-0.5 V
0
-2.0
0
0
25
50
75
100
-1.0
0
+1.0
125
Ambient Temperature, TA (°C)
Gate 1 to Source Voltage, VG1S (V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
Forward Transfer Admittance, |YFS| (mS)
Forward Transfer Admittance, |YFS| (mS)
0V
VDS = 5V
f = 1kHz
20
VG2S = 1.0
10
0.5 V
-0.5 V
0V
0
-2.0
-1.0
0
Gate 1 to Source Voltage, VG1S (V)
30
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
20
10
VG2S = 0.5 V
0
0
10
20
+1.0
Drain Current, ID (mA)
30
Noise Figure, NF (dB)
Gate 2 to Source Voltage
VG2S
Power Gain, GP (dB)
20
NE25118
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE
vs.
GATE 2 TO SOURCE VOLTAGE
2.0
10
30
1
VDS = 5 V
VG2S = 1 V
ID = 10 mA
f = 900 MHz
VG2S = 1 V at ID = 10 mA 1
1.0
1
VG2S = 1 V at ID = 5 mA
GPS
0
5
-15
NF
-30
-45
-1.0
0
0
-3.0
+1.0
Gate 2 to Source Voltage, VG2S (V)
Noise Figure, NF (dB)
15
Power Gain, GP (dB)
Input Capacitance, CISS (pF)
VDS = 5 V
f = 1kHz
-2.0
-1.0
0
+1.0
+2.0
Gate 2 to Source Voltage, VG2S (V)
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
Note:
1. Initial bias conditions. VG1S set to obtain
specified drain current.
NE25118
VDS = 5 V, VG2S = 1 V, ID = 10 mA
FREQUENCY
(MHz)
S11
MAG
100
200
300
400
500
600
700
800
900
1000
1100
1200
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
S21
ANG
-3.3
-7.2
-9.3
-13.4
-15.7
-19.1
-22.2
-25.2
-28.9
-29.4
-35.1
-35.2
S12
MAG
ANG
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
MAG
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
S22
ANG
-122.3
123.0
-145.0
79.2
29.7
65.0
45.5
80.1
8.3
50.9
71.4
91.1
MAG
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0.957
0.999
0.968
0.984
0.989
ANG
-1.3
-2.9
-3.3
5.6
-5.8
-7.7
-8.5
-9.4
-12.5
-11.1
-14.8
-13.0
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE25118
OUTLINE DIMENSIONS (Units in mm)
PART
NUMBER
PACKAGE OUTLINE 18
(SOT-343)
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
2.0 ± 0.2
0.65
ORDERING INFORMATION
NE25118
NE25118-T1
AVAILABILITY
Bulk up to 3K
3K/Reel
3 0.65
2
1.3
0.60
0.65
1
4
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
0 to 0.1
+0.10
0.15 -0.05
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
Note: All dimensions are typical unless otherwise specified.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE