GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK • LOW PACKAGE HEIGHT: 1.0 mm MAX Power Gain, GPS (dB) 20 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 mA 10 f = 900 MHz NF 0 0 0 DESCRIPTION 5 Noise Figure, NF (dB) • LOW CRSS: 0.02 pF (TYP) 5 10 Drain to Source Voltage, VDS (V) The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a 4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applications. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL PARAMETERS AND CONDITIONS NE25118 18 UNITS MIN NF Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB GPS Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB 16 Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA V 13 mA 5 BVDSX IDSS Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V TYP MAX 1.1 2.5 20 20 40 VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA V -3.5 VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA V -3.5 IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 µA 10 IG2SS Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 µA 10 |YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz mS 18 25 35 CISS Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.5 1.0 1.5 CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.02 0.03 California Eastern Laboratories NE25118 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT VDS Drain to Source Voltage V 13 VG1S Gate 1 to Source Voltage V -4.5 10 25 RATINGS VDS = 5 V VG2S = 1 V f = 900 MHz ID V Drain Current -4.5 mA PT Total Power Dissipation TCH TSTG IDSS mW 120 Channel Temperature °C 125 Storage Temperature °C -55 to +125 15 GPS 5 10 5 NF 0 0 Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. 0 5 10 Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE 250 30 200 Drain Current, ID (mA) Total Power Dissipation, PT (mW) VDS = 5V FREE AIR 150 120 100 50 VG2S = 1.0V 20 0.5 V 10 -0.5 V 0 -2.0 0 0 25 50 75 100 -1.0 0 +1.0 125 Ambient Temperature, TA (°C) Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 30 Forward Transfer Admittance, |YFS| (mS) Forward Transfer Admittance, |YFS| (mS) 0V VDS = 5V f = 1kHz 20 VG2S = 1.0 10 0.5 V -0.5 V 0V 0 -2.0 -1.0 0 Gate 1 to Source Voltage, VG1S (V) 30 VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 10 VG2S = 0.5 V 0 0 10 20 +1.0 Drain Current, ID (mA) 30 Noise Figure, NF (dB) Gate 2 to Source Voltage VG2S Power Gain, GP (dB) 20 NE25118 TYPICAL PERFORMANCE CURVES (TA = 25°C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 2.0 10 30 1 VDS = 5 V VG2S = 1 V ID = 10 mA f = 900 MHz VG2S = 1 V at ID = 10 mA 1 1.0 1 VG2S = 1 V at ID = 5 mA GPS 0 5 -15 NF -30 -45 -1.0 0 0 -3.0 +1.0 Gate 2 to Source Voltage, VG2S (V) Noise Figure, NF (dB) 15 Power Gain, GP (dB) Input Capacitance, CISS (pF) VDS = 5 V f = 1kHz -2.0 -1.0 0 +1.0 +2.0 Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. NE25118 VDS = 5 V, VG2S = 1 V, ID = 10 mA FREQUENCY (MHz) S11 MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.999 1.000 0.998 0.974 1.005 0.942 0.968 0.920 0.952 0.898 0.915 0.879 S21 ANG -3.3 -7.2 -9.3 -13.4 -15.7 -19.1 -22.2 -25.2 -28.9 -29.4 -35.1 -35.2 S12 MAG ANG 2.359 2.389 2.313 2.233 2.420 2.300 2.332 2.229 2.447 2.303 2.348 2.367 177.2 169.3 164.4 160.0 158.4 150.0 145.5 141.5 136.8 131.1 125.8 123.5 MAG 0.006 0.004 0.000 0.004 0.007 0.003 0.004 0.008 0.004 0.001 0.004 0.000 S22 ANG -122.3 123.0 -145.0 79.2 29.7 65.0 45.5 80.1 8.3 50.9 71.4 91.1 MAG 0.969 0.981 0.979 0.967 0.999 0.958 0.997 0.957 0.999 0.968 0.984 0.989 ANG -1.3 -2.9 -3.3 5.6 -5.8 -7.7 -8.5 -9.4 -12.5 -11.1 -14.8 -13.0 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain, MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE25118 OUTLINE DIMENSIONS (Units in mm) PART NUMBER PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2.0 ± 0.2 0.65 ORDERING INFORMATION NE25118 NE25118-T1 AVAILABILITY Bulk up to 3K 3K/Reel 3 0.65 2 1.3 0.60 0.65 1 4 +0.10 0.4 -0.05 0.3 0.9 ± 0.1 0 to 0.1 +0.10 0.15 -0.05 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 Note: All dimensions are typical unless otherwise specified. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE