NEC NE72218

DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER
C to X BAND OSC
N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz
• Gate length
: Lg = 0.8 µm
• Gate width
: Wg = 400 µm
• 4-pin super minimold package
• Tape & reel packaging only available
ORDERING INFORMATION
Part Number
NE72218-T1
Package
4-pin super minimold
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
• Qty 3 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
• Qty 3 kpcs/reel
NE72218-T2
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE72218).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
5.0
V
Gate to Source Voltage
VGS
−5.0
V
ID
IDSS
mA
Total Power Dissipation
Ptot
250
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
Drain Current
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition)
Date Published August 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1997, 2000
NE72218
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −5 V
−
1.0
10
µA
Saturated Drain Current
IDSS
VDS = 3 V, VGS = 0 V
30
60
120
mA
VGS (off)
VDS = 3 V, ID = 100 µA
−0.5
−2.0
−4.0
V
Transconductance
gm
VDS = 3 V, ID = 30 mA
20
45
−
mS
Phase Noise
PN
VDS = 3 V, ID = 30 mA, f = 11 GHz,
100 kHz offset
−
−110
−
dBc/Hz
VDS = 3 V, ID = 30 mA, f = 11 GHz,
10 kHz offset
−
−90
−
dBc/Hz
GS
VDS = 3 V, ID = 30 mA, f = 12 GHz
−
4.5
−
dB
PO (1 dB)
VDS = 3 V, ID = 30 mA, f = 12 GHz
−
15.0
−
dBm
Gate to Source Cutoff Voltage
Power Gain
Output Power at 1 dB Gain
Compression Point
IDSS CLASSIFICATION
2
Rank
IDSS (mA)
Marking
57
30 to 120
V57
58
65 to 120
V58
59
30 to 75
V59
Data Sheet P12750EJ3V0DS00
NE72218
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
100
400
80
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
200
VGS = 0 V
60
40
–0.5 V
20
100
–1.0 V
0
50
100
150
200
250
0
Ambient Temperature TA (˚C)
1
2
3
4
5
Drain to Sourcr Voltage VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 3 V
Drain Current ID (mA)
80
60
40
20
0
–4.0
–2.0
0
Gate to Source Voltage VGS (V)
Remark The graphs indicate nominal characteristics.
Data Sheet P12750EJ3V0DS00
3
NE72218
S-PARAMETERS
MAG. AND ANG.
VDS = 3 V, ID = 10 mA
Frequency
4
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
0.896
0.849
0.801
0.741
0.687
0.630
0.578
0.534
0.498
0.466
0.437
0.411
0.395
0.395
0.408
0.435
0.477
0.525
0.572
0.621
0.656
0.694
0.720
0.744
0.772
0.803
0.819
0.837
0.843
0.848
0.844
0.847
0.854
−41.7
−51.7
−62.1
−72.5
−83.1
−93.3
−103.7
−114.6
−126.0
−138.0
−151.0
−164.5
−177.9
167.8
152.7
138.7
125.5
113.8
103.8
95.4
88.0
80.8
73.7
66.6
59.8
52.6
47.0
42.5
39.1
36.8
35.4
33.2
30.9
2.732
2.662
2.623
2.556
2.484
2.413
2.337
2.261
2.186
2.120
2.050
1.984
1.923
1.877
1.822
1.763
1.700
1.625
1.538
1.450
1.354
1.263
1.165
1.070
0.969
0.869
0.776
0.696
0.623
0.557
0.495
0.444
0.399
135.1
124.7
114.4
104.6
95.1
86.0
76.9
68.2
59.7
51.5
43.3
35.1
27.3
19.2
10.8
2.1
−6.6
−15.2
−24.0
−32.9
−41.2
−49.5
−58.1
−66.2
−74.2
−82.2
−88.5
−94.5
−99.9
−104.9
−109.7
−113.8
−117.7
0.067
0.079
0.091
0.098
0.105
0.109
0.114
0.115
0.117
0.122
0.125
0.130
0.135
0.148
0.160
0.175
0.190
0.203
0.216
0.228
0.237
0.244
0.248
0.248
0.247
0.243
0.235
0.227
0.222
0.217
0.211
0.205
0.195
62.7
58.1
52.2
47.3
43.8
39.9
37.7
35.3
35.0
34.2
33.5
32.8
34.4
33.4
31.6
29.8
26.4
22.3
17.9
12.5
6.5
0.2
−5.9
−12.0
−18.2
−24.5
−29.5
−34.5
−39.0
−43.0
−47.9
−51.7
−55.5
0.709
0.683
0.657
0.625
0.594
0.570
0.549
0.530
0.512
0.499
0.476
0.450
0.423
0.402
0.381
0.377
0.389
0.410
0.436
0.457
0.472
0.484
0.504
0.543
0.586
0.645
0.691
0.734
0.767
0.784
0.797
0.802
0.804
−27.8
−34.1
−40.7
−46.9
−53.1
−59.3
−65.7
−71.7
−77.3
−81.8
−86.6
−91.7
−97.5
−106.7
−118.5
−131.9
−146.7
−160.7
−174.4
172.5
160.0
146.1
131.8
118.3
106.3
97.0
89.8
84.4
78.9
73.2
66.3
58.7
52.2
Data Sheet P12750EJ3V0DS00
NE72218
AMPLIFER PARAMETERS
VDS = 3 V, ID = 10 mA
Frequency
GUmax
GAmax
S212
S122
MHz
dB
dB
dB
dB
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
18.83
16.76
15.28
13.77
12.57
11.55
10.70
9.97
9.35
8.83
8.27
7.74
7.27
6.97
6.68
6.50
6.44
6.41
6.38
6.36
6.17
6.04
5.76
5.60
5.48
5.60
5.44
5.45
5.14
4.58
3.67
2.90
2.21
8.73
8.50
8.38
8.15
7.90
7.65
7.37
7.09
6.79
6.53
6.23
5.95
5.68
5.47
5.21
4.93
4.61
4.22
3.74
3.23
2.63
2.03
1.33
0.59
−0.28
−1.22
−2.21
−3.15
−4.11
−5.09
−6.12
−7.05
−7.98
−23.44
−22.04
−20.86
−20.17
−19.54
−19.22
−18.90
−18.81
−18.66
−18.30
−18.03
−17.73
−17.42
−16.60
−15.90
−15.16
−14.44
−13.87
−13.31
−12.86
−12.50
−12.27
−12.09
−12.10
−12.14
−12.28
−12.59
−12.88
−13.08
−13.29
−13.51
−13.77
−14.20
11.96
10.83
10.19
9.42
8.74
8.19
7.99
7.78
7.81
8.34
K
0.39
0.48
0.55
0.66
0.75
0.85
0.93
1.03
1.10
1.13
1.20
1.26
1.32
1.26
1.21
1.14
1.04
0.95
0.88
0.81
0.78
0.76
0.77
0.77
0.76
0.72
0.71
0.67
0.65
0.65
0.68
0.75
0.82
Data Sheet P12750EJ3V0DS00
Delay
Mason’s U
G1
G2
ns
dB
dB
dB
0.058
0.058
0.057
0.055
0.053
0.051
0.050
0.048
0.047
0.045
0.045
0.046
0.043
0.045
0.047
0.049
0.048
0.048
0.049
0.049
0.046
0.046
0.048
0.045
0.044
0.044
0.035
0.033
0.030
0.028
0.026
0.023
0.022
23.662
23.219
22.068
20.102
19.595
18.153
17.841
16.857
16.530
16.398
15.252
13.995
12.822
12.769
12.379
12.271
12.698
13.096
13.357
13.657
13.187
12.458
10.685
9.478
8.699
8.737
8.174
8.590
8.343
7.597
6.421
4.782
3.605
7.06
5.53
4.45
3.47
2.77
2.19
1.76
1.46
1.24
1.06
0.92
0.80
0.74
0.74
0.79
0.91
1.12
1.40
1.72
2.12
2.44
2.85
3.17
3.50
3.93
4.49
4.82
5.24
5.39
5.52
5.40
5.48
5.67
3.04
2.73
2.45
2.15
1.89
1.71
1.56
1.43
1.32
1.25
1.11
0.98
0.86
0.77
0.68
0.66
0.71
0.80
0.92
1.02
1.10
1.16
1.27
1.52
1.83
2.33
2.82
3.36
3.86
4.15
4.38
4.47
4.52
5
NE72218
S-PARAMETERS
MAG. AND ANG.
VDS = 3 V, ID = 30 mA
Frequency
6
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
0.869
0.809
0.751
0.686
0.628
0.571
0.521
0.477
0.445
0.421
0.400
0.384
0.377
0.390
0.415
0.451
0.498
0.551
0.598
0.645
0.678
0.717
0.740
0.766
0.793
0.822
0.838
0.849
0.855
0.856
0.851
0.850
0.856
−46.6
−57.6
−68.9
−80.0
−91.4
−102.5
−113.8
−125.9
−137.9
−150.6
−164.3
−178.6
168.0
154.1
140.2
127.5
115.8
105.5
96.7
89.2
82.5
75.9
69.1
62.3
55.7
49.1
43.8
39.6
36.2
34.2
32.8
30.7
28.6
3.275
3.152
3.059
2.935
2.815
2.703
2.589
2.477
2.373
2.283
2.193
2.106
2.034
1.971
1.907
1.839
1.765
1.680
1.589
1.499
1.401
1.309
1.210
1.112
1.015
0.916
0.818
0.741
0.664
0.599
0.535
0.481
0.432
131.7
120.9
110.3
100.4
90.8
81.7
72.8
64.2
55.9
48.0
40.1
32.2
24.6
16.8
8.6
0.5
−8.0
−16.5
−24.7
−33.2
−41.1
−49.1
−57.3
−65.4
−73.2
−80.8
−87.3
−93.0
−98.7
−103.7
−108.5
−112.9
−116.9
0.058
0.069
0.080
0.087
0.094
0.099
0.105
0.111
0.116
0.124
0.132
0.141
0.152
0.167
0.180
0.197
0.211
0.227
0.238
0.248
0.256
0.262
0.267
0.262
0.261
0.253
0.246
0.239
0.229
0.225
0.219
0.213
0.206
65.5
61.8
57.2
53.4
51.0
48.7
47.6
46.5
46.0
45.3
43.9
42.3
41.8
39.7
36.9
32.8
28.7
23.7
18.1
12.4
6.5
0.1
−6.8
−12.6
−18.9
−25.5
−30.0
−35.2
−39.9
−43.8
−48.4
−51.7
−56.3
0.622
0.595
0.569
0.539
0.514
0.495
0.477
0.462
0.450
0.442
0.423
0.399
0.375
0.355
0.334
0.326
0.340
0.361
0.388
0.408
0.424
0.440
0.463
0.503
0.551
0.613
0.662
0.703
0.740
0.760
0.774
0.782
0.787
−27.0
−32.9
−39.1
−44.6
−50.2
−56.0
−62.4
−67.9
−73.5
−77.7
−82.7
−87.5
−93.2
−102.6
−115.1
−130.0
−145.9
−161.6
−175.8
170.2
157.2
142.9
128.4
115.3
103.4
94.6
88.1
82.9
77.7
72.1
65.3
57.7
51.6
Data Sheet P12750EJ3V0DS00
NE72218
AMPLIFER PARAMETERS
VDS = 3 V, ID = 30 mA
Frequency
GUmax
GAmax
S212
S122
MHz
dB
dB
dB
dB
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
18.54
16.47
15.02
13.60
12.50
11.56
10.76
10.04
9.45
8.96
8.43
7.92
7.49
7.20
6.94
6.77
6.70
6.69
6.66
6.64
6.47
6.40
6.15
6.03
6.01
6.16
6.01
5.91
5.59
5.03
4.13
3.31
2.63
10.30
9.97
9.71
9.35
8.99
8.64
8.26
7.88
7.51
7.17
6.82
6.47
6.16
5.90
5.61
5.29
4.93
4.51
4.03
3.52
2.93
2.34
1.66
0.92
0.13
−0.77
−1.74
−2.60
−3.56
−4.45
−5.43
−6.35
−7.29
−24.67
−23.20
−21.98
−21.17
−20.56
−20.06
−19.60
−19.13
−18.71
−18.14
−17.61
−17.02
−16.35
−15.54
−14.89
−14.13
−13.50
−12.89
−12.48
−12.10
−11.85
−11.65
−11.48
−11.64
−11.66
−11.93
−12.18
−12.43
−12.80
−12.95
−13.17
−13.43
−13.73
12.40
11.39
10.67
10.19
9.57
8.97
8.51
8.35
8.21
8.40
K
0.48
0.60
0.69
0.81
0.90
0.99
1.06
1.12
1.16
1.17
1.19
1.21
1.21
1.15
1.11
1.05
0.97
0.90
0.84
0.79
0.78
0.76
0.76
0.77
0.76
0.72
0.71
0.68
0.67
0.67
0.70
0.77
0.81
Data Sheet P12750EJ3V0DS00
Delay
Mason’s U
G1
G2
ns
dB
dB
dB
0.060
0.060
0.059
0.055
0.053
0.051
0.049
0.048
0.046
0.044
0.044
0.044
0.042
0.043
0.045
0.045
0.047
0.047
0.046
0.047
0.044
0.044
0.046
0.045
0.043
0.043
0.036
0.032
0.032
0.028
0.027
0.024
0.022
25.559
24.322
23.374
21.140
20.302
19.221
18.623
17.853
17.191
16.934
15.809
14.584
13.608
13.377
12.848
12.873
13.036
13.577
13.958
14.098
13.272
12.821
11.382
9.915
9.245
9.477
8.623
8.952
8.694
7.908
6.599
4.769
3.979
6.11
4.61
3.61
2.76
2.18
1.71
1.37
1.12
0.96
0.85
0.76
0.69
0.67
0.72
0.82
0.99
1.24
1.57
1.93
2.34
2.68
3.13
3.45
3.84
4.31
4.88
5.25
5.55
5.71
5.74
5.60
5.56
5.72
2.12
1.90
1.70
1.49
1.33
1.22
1.12
1.04
0.98
0.94
0.85
0.75
0.66
0.58
0.51
0.49
0.53
0.61
0.71
0.79
0.86
0.94
1.05
1.27
1.57
2.05
2.50
2.96
3.44
3.74
3.96
4.10
4.20
7
NE72218
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.2
0.3+0.1
–0.05
3
2
0.3+0.1
–0.05
(1.3)
0.3+0.1
–0.05
4
PIN CONNECTIONS
1.
2.
3.
4.
8
Source
Gate
Source
Drain
Data Sheet P12750EJ3V0DS00
0.15+0.1
–0.05
0 to 0.1
0.9±0.1
0.3
1
0.4+0.1
–0.05
0.65
0.60
(1.25)
V57
2.0±0.2
1.25±0.1
NE72218
PRECAUTION
(1) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that sufficient
care be taken regarding static electricity and strong electric fields.
Take measures against static electricity and make sure the body is earthed when mounting the device.
(2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply.
• Directly ground both the source pins.
• Fix VGS to approximately −4 V.
• Increase VDS to a predetermined voltage level (within the recommended operating range of VDS).
• Adjust VGS in line with a predetermined ID.
(3) It is recommended that the bias application circuit be able to have a fixed voltage and current.
(4) Adjust the I/O matching circuit after turning the bias OFF.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below,
Time: 30 seconds or less (at 210 °C or higher),
Note
Count: 3 times or less, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215 °C or below,
Time: 40 seconds or less (at 200 °C or higher),
Note
Count: 3 times or less, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below,
Time: 10 seconds or less,
Note
Count: 1 time, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 230 °C or below,
Time: 10 seconds or less (per pin row),
Note
Exposure limit: None
−
Note After opening the dry pack, store it at 25 °C or less and 65 % RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12750EJ3V0DS00
9
NE72218
[MEMO]
10
Data Sheet P12750EJ3V0DS00
NE72218
[MEMO]
Data Sheet P12750EJ3V0DS00
11
NE72218
CAUTION
The great care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is current as of August, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4