PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2121TB L-BAND UP/DOWN CONVERTER DESCRIPTION The µPG2121TB is L-band up-converter or down-converter IC (LO Buff. Amp. + Passive Mixer). The device can convert the RF frequency to IF frequency and operate low current. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system. FEATURES • +2.8 V single voltage • Low distortion (IIP3 = +23 dBm TYP.) • Low current operation (IDD = 3.5 mA TYP.) • LO buffer amplifier and passive mixer on a single chip • 6-pin super minimold package (Size: 2.0 × 1.25 × 0.9 mm) APPLICATION • L-band digital cellular etc. ORDERING INFORMATION Part Number µPG2121TB-E3 Package 6-pin super minimold Marking G2E Supplying Form Embossed tape 8 mm wide. Pin 1 face the tape perforation side. Qty 3kpcs / reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG2121TB) Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAS HJ-FET. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15014EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan © 2000 µPG2121TB PIN CONNECTIONS Pin No. Connection Pin No. Connection 1 RF or IF 4 LO IN 2 GND 5 GND 3 VDD 6 IF or RF 3 2 1 G2E Top View Bottom View Top View 4 4 3 3 4 5 5 2 2 5 6 6 1 1 6 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Supply Voltage VDD 6.0 V LO Input Power PLO +10 dBm RF Input Power PRF +10 dBm Note 140 Total Power Dissipation Ptot mW Operating Ambient Temperature TA −30 to +90 °C Storage Temperature Tstg −35 to +150 °C Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C 2 Preliminary Data Sheet P15014EJ1V0DS00 µPG2121TB ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VDD +2.7 +2.8 +3.0 V RF Frequency fRF 810 − 960 MHz IF Frequency fIF 50 − 400 MHz PLO −10 −5 0 dBm LO Input Power ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD = 2.8 V, fRF1 = 850 MHz, fRF2 = 850.1 MHz, PRF1 = PRF2 = −3 dBm, fLO = 940 MHz, PLO = −5 dBm, fIF = 90 MHz, fIM3 = 90.1 MHz) Parameter Symbol Test Condition MIN. TYP. MAX. Unit Total Current IDD − 3.5 4.5 mA Conversion Loss LC − −6.0 −7.5 dB 3rd Order Distortion Input Intercept Note Point IIP3 +18 +23 − dBm 3rd Order Intermoduration Distortion IM3 − −52 −42 dBc Local Leackage LLO − −13 −11 dBm Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve. ∆IM3 × PRF + CG − PIM3 IIP3 = [dBm] ∆IM3: PIM3 gradient ∆IM3 − 1 Calculated as ∆IM3 = 3 Preliminary Data Sheet P15014EJ1V0DS00 3 µPG2121TB EVALUATION CIRCUIT TA = +25 °C, VDD = +2.8 V, f = 850 MHz L1 L2 IF VDD C2 C1 1 2 C3 3 G2E 6 L4 RF 5 4 C4 L3 EVALUATION BOARD LO USING THE NEC EVALUATION BOARD VDD Values Part Number Maker C1 5 pF GRM39CH 050 C50 muRata C2 33 pF GRM36CH 330 J50 muRata C3 1 000 pF GRM39B 102 K50 muRata C4 5 pF GRM39CH 050 C50 muRata L1 6.8 nH TFL0510 6N8 susumu L2 15 nH TFL0816 15N susumu L3 27 nH TFL0816 27N susumu L4 6.8 nH TFL0816 6N8 susumu IF C3 C2 C1 L2 L1 C4 L4 RF 4 L3 LO Preliminary Data Sheet P15014EJ1V0DS00 µPG2121TB TOTAL CURRENT, CONVERSION LOSS, IIP3, NOISE FIGURE, IM3, LOCAL LEAKAGE vs. LOCAL INPUT POWER 10 VDD = 2.8 V, fRF = 850 MHz, 0 fLO = 940 MHz, fIF = 90 MHz, –10 9 PLO = –5 dBm 8 PIF 7 –20 IM3 –30 6 5 –40 –50 4 IDD –60 3 –70 2 –80 1 –90 –25 Total Current IDD (mA), Conversion Loss LC (dB), 3rd Order Distortion Input Intercept Point IIP3 (dBm), Noise Figure NF (dB) 10 Total Current IDD (mA) IF Output Power PIF (dBm), 3rd Order Intermoduration Distortion IM3 (dBc) IF OUTPUT POWER, IM3, TOTAL CURRENT vs. RF INPUT POWER 0 –20 –15 –10 –5 0 5 10 15 TOTAL CURRENT, CONVERSION LOSS, IIP3, IM3, LOCAL LEAKAGE, vs. RF FREQUENCY 30 0 LLO 25 –20 IIP3 20 15 IM3 VDD = 2.8 V, fLO = 895 to 985 MHz, fRF1 = 850 MHz, fRF2 = 850.1 MHz, –40 fIF = 90 MHz, PRF = –3 dBm, PLO = –5 dBm 10 –60 –80 LC 5 –100 IDD 0 –120 800 810 820 830 840 850 860 870 880 890 900 LLO 25 –20 IIP3 –40 20 IM3 15 –60 10 VDD = 2.8 V, fRF = 850 MHz, fLO = 940 MHz, fIF = 90 MHz, –80 PRF = –3 dBm NF 5 –100 LC IDD 0 –25 –20 –15 –10 –5 0 5 10 –120 15 Local Input Power PLO (dBm) 3rd Order Intermoduration Distortion IM3 (dBc), Local Leackage LLO (dBm) Total Current IDD (mA), Conversion Loss LC (dB), 3rd Order Distortio Input Intercept Point IIP3 (dBm) RF Input Power PRF (dBm) 0 30 3rd Order Intermoduration Distortion IM3 (dBc), Local Leackage LLO (dBm) TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C) RF Frequency fRF (MHz) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet P15014EJ1V0DS00 5 µPG2121TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 6 Preliminary Data Sheet P15014EJ1V0DS00 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2121TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Preliminary Data Sheet P15014EJ1V0DS00 7 µPG2121TB CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4