DATA SHEET PHOTOCOUPLER PS2565-1,-2, PS2565L-1,-2 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2565-1, -2 and PS2565L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor. PS2565-1, -2 are in a plastic DIP (Dual In-line Package) and PS2565L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • AC input response • High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (t r = 3 µs TYP., tf = 5 µs TYP.) • UL approved (File No. E72422 (S) ) • CSA approved (No. CA 101391) • BSI approved (BS415, BS7002) No. 7112 • SEMKO approved (SS4410165) No. 9317144 • NEMKO approved (NEK-HD 195S6) No. A21409 • DEMKO approved (Section 101, 137) No. 300535 • FIMKO approved (E69-89) No. 167265-08 • VDE0884 approved (Option) APPLICATIONS • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P12991EJ4V0DS00 (4th edition) (Previous No. LC-2227) Date Published August 1997 NS Printed in Japan The mark shows major revised points. © 1992 PS2565-1,-2,PS2565L-1,-2 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2565-1 PS2565-1 (New Package) 4 3 4 3 5.1 MAX. 1 2 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 6.5 6.5 4.6 ± 0.35 7.62 1.25±0.15 0.50 ± 0.10 0.25 M 4.55 MAX. 3.8 MAX. 2.8 MIN. 0.65 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 1.25±0.15 0 to 15˚ 0.50 ± 0.10 0.25 M 2.54 2.54 PS2565-2 PS2565L1-1 4 3 8 7 6 5 10.2 MAX. 1 2 1 2 3 4 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 6.5 5.1 MAX. 10.16 7.62 0.50 ± 0.10 0.25 M Caution New package 1ch only 2 4.55 MAX. 3.8 MAX. 0.65 3.8 MAX. 0.35 2.54 0 to 15˚ 2.8 MIN. 4.25 MAX. 2.8 MIN. 7.62 1.25±0.15 0 to 15˚ 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 0 to 15˚ PS2565-1,-2,PS2565L-1,-2 Lead Bending Type PS2565L-1 (New Package) PS2565L-1 4 3 4 3 4.6 ± 0.35 5.1 MAX. 1 2 1 2 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2565L-2 PS2565L2-1 4 3 8 7 6 5 5.1 MAX. 10.2 MAX. 1 2 3 4 1 2 0.9 ± 0.25 1.25±0.15 0.25 M 10.16 12.0 MAX. 7.62 0.05 to 0.2 6.5 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 2.54 0.05 to 0.2 6.5 0.90 ± 0.25 1.25±0.15 0.25 M 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.90 ± 0.25 9.60 ± 0.4 1.25±0.15 0.25 M 2.54 Caution New package 1ch only 3 PS2565-1,-2,PS2565L-1,-2 ORDERING INFORMATION Part Number Package Safety Standard Approval PS2565-1 PS2565L-1 PS2565L1-1 PS2565L2-1 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2565-2 PS2565L-2 8-pin DIP 8-pin DIP (lead bending surface mount) PS2565-1-V PS2565L-1-V PS2565L1-1-V PS2565L2-1-V 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2565-2-V PS2565L-2-V 8-pin DIP 8-pin DIP (lead bending surface mount) Standard products • UL approved • BSI approved • DEMKO approved • FIMKO approved PS2565-1 • CSA approved • NEMKO approved • SEMKO approved PS2565-2 VDE0884 approved products (Option) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Symbol Ratings PS2565-1, PS2565L-1 Diode Forward Current (DC) IF Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Unit PS2565-2, PS2565L-2 80 mA ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 5 000 *3 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output *3 VDE0884 approved products (Option) 4 PS2565-1 PS2565-2 *1 As applying to Safety Standard, following part number should be used. Parameter Application part *1 number PS2565-1,-2,PS2565L-1,-2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. Unit 1.4 V VF IF = ±10 mA 1.17 Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 100 Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio CTR IF = ±5 mA, VCE = 5 V 80 CTR Ratio CTR1/ CTR2 IF = 5 mA, VCE = 5 V 0.3 Collector Saturation Voltage VCE (sat) IF = ±10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kV Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *1 Rise Time Fall Time *2 tr *2 pF 100 nA 200 400 % 1.0 3.0 0.3 V Ω 11 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω tf *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF2 MAX. Forward Voltage Transistor IF1 TYP. 0.5 pF 3 µs 5 *2 Test circuit for switching time IC1 Pulse Input VCE IC2 IF VCC PW = 100 µ s Duty Cycle = 1/10 50 Ω VOUT RL = 100 Ω 5 PS2565-1,-2,PS2565L-1,-2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2565-1 PS2565L-1 100 PS2565-2 PS2565L-2 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 125 150 PS2565-1 PS2565L-1 100 PS2565-2 PS2565L-2 50 1.2 mW/˚C 0 150 25 100 125 150 80 50 60 TA = +100 ˚C +60 ˚C +25 ˚C Forward Current IF (mA) Forward Current IF (mA) 100 FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 40 20 0 –20 –40 –60 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 –80 1.5 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 75 50 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) 100 10 1 – 50 –25 0 25 50 Ambient Temperature TA (˚C) 6 1.5 mW/˚C 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) 1.0 PS2565-1,-2,PS2565L-1,-2 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 70 Collector Current IC (mA) 60 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0 4 2 8 6 10 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 1 000 450 350 300 250 200 150 100 ts 100 10 tr 50 0 100 tf IF = 5 mA, VCC = 5 V, CTR = 290 % 400 Switching Time t ( µ s) Current Transfer Ratio CTR (%) ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 1.2 0.05 0.1 0.5 1 5 10 1 100 50 td 500 1 k Forward Current IF (mA) 5 k 10 k 50 k 100 k Load Resistance RL (Ω) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 50 tf tr IF = 5 mA, VCE = 5 V 0 10 Normalized Gain GV Switching Time t ( µ s) IC = 2 mA, VCC = 10 V, CTR = 290 % td ts 1 –5 –10 100 Ω –15 RL = 1 kΩ –20 0.1 10 300 Ω 50 100 500 1 k Load Resistance RL (Ω) 5 k 10 k 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) 7 PS2565-1,-2,PS2565L-1,-2 LONG TIME CTR DEGRADATION 1.2 TYP. CTR (Relative Value) 1.0 0.8 IF = 5 mA TA = 25 ˚C 0.6 IF = 5 mA TA = 60 ˚C 0.4 0.2 0 102 103 Time (Hr) 8 104 105 PS2565-1,-2,PS2565L-1,-2 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Taping Direction PS2565L-1-E3 PS2565L-1-F3 PS2565L-1-E4 PS2565L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2565L-1-E3, E4: φ 250 PS2565L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2565L-1-E3, E4 1 000 pcs/reel PS2565L-1-F3, F4 2 000 pcs/reel 9 PS2565-1,-2,PS2565L-1,-2 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Taping Direction PS2565L-2-E3 PS2565L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 10 PS2565-1,-2,PS2565L-1,-2 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 11 PS2565-1,-2,PS2565L-1,-2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Speck 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 175 400 700 °C mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 12 12 9 Ω PS2565-1,-2,PS2565L-1,-2 [MEMO] 13 PS2565-1,-2,PS2565L-1,-2 [MEMO] 14 PS2565-1,-2,PS2565L-1,-2 [MEMO] 15 PS2565-1,-2,PS2565L-1,-2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5