DATA SHEET PHOTOCOUPLER PS2566-1,-2, PS2566L-1,-2 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2566-1, -2 and PS2566L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon darlington connected phototransistor. PS2566-1, -2 are in a plastic DIP (Dual In-line Package) and PS2566L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • AC input response • High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High current transfer ratio (CTR = 2 000 % TYP.) • High-speed switching (tr, tf = 100 µs TYP.) • UL approved (File No. E72422 (S) ) • CSA approved (No. CA 101391) • BSI approved (BS415, BS7002) No. 7112 • SEMKO approved (SS4410165) No. 9317144 • NEMKO approved (NEK-HD 195S6) No. A21409 • DEMKO approved (Section 101, 137) No. 300535 • FIMKO approved (E69-89) No. 167265-08 • VDE0884 approved (Option) APPLICATIONS • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P12992EJ4V0DS00 (4th edition) (Previous No. LC-2228) Date Published August 1997 NS Printed in Japan The mark shows major revised points. © 1992 PS2566-1,-2,PS2566L-1,-2 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2566-1 PS2566-1 (New Package) 4 3 4 3 5.1 MAX. 4.6 ± 0.35 1 2 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 6.5 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 1.25±0.15 0.50 ± 0.10 0.25 M 4.55 MAX. 3.8 MAX. 2.8 MIN. 0.65 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 1.25±0.15 0 to 15˚ 0.50 ± 0.10 0.25 M 2.54 2.54 PS2566-2 PS2566L1-1 8 7 6 5 4 3 10.2 MAX. 1 2 1 2 3 4 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 6.5 5.1 MAX. 10.16 7.62 0.50 ± 0.10 0.25 M Caution New package 1ch only 2 4.55 MAX. 3.8 MAX. 0.65 3.8 MAX. 0.35 2.54 0 to 15˚ 2.8 MIN. 4.25 MAX. 2.8 MIN. 7.62 1.25±0.15 0 to 15˚ 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 0 to 15˚ PS2566-1,-2,PS2566L-1,-2 Lead Bending Type PS2566L-1 (New Package) PS2566L-1 4 3 4 3 4.6 ± 0.35 5.1 MAX. 1 2 1 2 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2566L-2 PS2566L2-1 8 7 6 5 4 3 5.1 MAX. 10.2 MAX. 1 2 1 2 3 4 0.9 ± 0.25 10.16 2.54 12.0 MAX. 7.62 0.05 to 0.2 6.5 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1.25±0.15 0.25 M 0.05 to 0.2 6.5 0.90 ± 0.25 1.25±0.15 0.25 M 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.90 ± 0.25 9.60 ± 0.4 1.25±0.15 0.25 M 2.54 Caution New package 1ch only 3 PS2566-1,-2,PS2566L-1,-2 ORDERING INFORMATION Part Number Package Safety Standard Approval PS2566-1 PS2566L-1 PS2566L1-1 PS2566L2-1 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2566-2 PS2566L-2 8-pin DIP 8-pin DIP (lead bending surface mount) PS2566-1-V PS2566L-1-V PS2566L1-1-V PS2566L2-1-V 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2566-2-V PS2566L-2-V 8-pin DIP 8-pin DIP (lead bending surface mount) Standard products • UL approved • BSI approved • DEMKO approved • FIMKO approved PS2566-1 • CSA approved • NEMKO approved • SEMKO approved PS2566-2 VDE0884 approved products (Option) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Symbol Ratings PS2566-1, PS2566L-1 Diode Forward Current (DC) IF Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Unit PS2566-2, PS2566L-2 80 mA ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 6 V Collector Current Power Dissipation Derating Power Dissipation *2 IC 200 160 mA/ch ∆PC/°C 2.0 1.6 mW/°C PC 200 160 mW/ch Isolation Voltage BV 5 000 *3 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output *3 VDE0884 approved products (Option) 4 PS2566-1 PS2566-2 *1 As applying to Safety Standard, following part number should be used. Parameter Application part *1 number PS2566-1,-2,PS2566L-1,-2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. TYP. MAX. Unit 1.4 V Forward Voltage VF IF = ±10 mA 1.17 Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 100 pF Transistor Collector to Emitter Dark Current ICEO VCE = 40 V, IF = 0 mA Coupled Current Transfer Ratio CTR IF = ±1 mA, VCE = 2 V 200 2 000 CTR Ratio CTR1/ CTR2 IF = 1 mA, VCE = 2 V 0.3 1.0 Collector Saturation Voltage VCE (sat) IF = ±1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kV Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF VCC = 10 V, IC = 10 mA, RL = 100 Ω 100 µs *1 Rise Time Fall Time *2 tr *2 IF2 nA % 3.0 1.0 V Ω 11 10 tf *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 400 100 *2 Test circuit for switching time IC1 VCE IC2 Pulse Input IF VCC PW = 1 ms Duty Cycle = 1/10 50 Ω VOUT RL = 100 Ω 5 PS2566-1,-2,PS2566L-1,-2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2566-1 PS2566L-1 100 PS2566-2 PS2566L-2 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 2 mW/˚C 100 1.6 mW/˚C 50 25 50 75 100 125 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 150 60 TA = +100 ˚C +60 ˚C +25 ˚C Forward Current IF (mA) Forward Current IF (mA) PS2566-2 PS2566L-2 80 50 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 0.7 40 20 0 –20 –40 –60 0.1 0.8 0.9 1.0 1.1 1.2 1.4 1.3 –80 1.5 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 200 VCE = 2 V 5V 10 V 24 V 40 V 1000 100 10 1 –50 10 mA 100 10 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) PS2566-1 PS2566L-1 150 0 150 100 –25 0 25 50 75 Ambient Temperature TA (˚C) 6 200 100 5 mA 50 1 mA 10 0.5 mA 5 0.2 mA 1 0.5 0.2 0.4 IF = 0.1 mA 0.6 0.8 1.0 1.2 1.4 Collector Saturation Voltage VCE(sat) (V) 1.6 PS2566-1,-2,PS2566L-1,-2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 160 5 mA Collector Current IC (mA) 140 120 100 80 2 mA 60 40 1 mA 20 IF = 0.5 mA 0 2 4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 6 8 1.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 1.2 1.0 0.8 0.6 0.4 0.2 –50 10 –25 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 75 100 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 8 000 7 000 6 000 5 000 4 000 3 000 2 000 1 000 Current Transfer Ratio CTR (%) 3 000 VCE = 2 V 0 0.1 0.5 1 5 10 VCE = 2 V 2 500 2 000 1 500 1 000 500 0 30 10 50 SWITCHING TIME vs. LOAD RESISTANCE 10 000 VCC = 5 V, 500 IC = 2 mA, CTR = 2 280 % tf Switching Time t ( µ s) 5 000 100 tr td 10 5 2 30 50 500 SWITCHING TIME vs. LOAD RESISTANCE 1 000 50 100 Forward Current IF ( µ A) Forward Current IF (mA) Switching Time t ( µ s) 50 25 Ambient Temperature TA (˚C) Collector to Emitter Voltage VCE (V) Current Transfer Ratio CTR (%) 0 ts tf VCC = 5 V, IF = 1 mA, CTR = 2 280 % 1 000 500 ts 100 50 tr 10 td 100 500 1k Load Resistance RL (Ω) 5k 300 500 1k 5k 10 k 50 k 100 k Load Resistance RL (Ω) 7 PS2566-1,-2,PS2566L-1,-2 LONG TIME CTR DEGRADATION FREQUENCY RESPONSE 1.2 IF = 1 mA, VCE = 2 V –5 –10 –15 RL = 100 Ω 0.5 1 2 5 10 20 Frequency f (kHz) 8 TA = 25 oC 0.8 TA = 60 oC 0.6 0.4 0.2 –20 0.2 IF = 1 mA (TYP.) 1.0 CTR (Relative Value) Normalized Gain GV 0 50 100 200 0 10 102 103 104 Time (Hr) 105 106 PS2566-1,-2,PS2566L-1,-2 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Taping Direction PS2566L-1-E3 PS2566L-1-F3 PS2566L-1-E4 PS2566L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2566L-1-E3, E4: φ 250 PS2566L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2566L-1-E3, E4 1 000 pcs/reel PS2566L-1-F3, F4 2 000 pcs/reel 9 PS2566-1,-2,PS2566L-1,-2 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Taping Direction PS2566L-2-E3 PS2566L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 10 PS2566-1,-2,PS2566L-1,-2 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 11 PS2566-1,-2,PS2566L-1,-2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Speck 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 175 400 700 °C mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 12 12 9 Ω PS2566-1,-2,PS2566L-1,-2 [MEMO] 13 PS2566-1,-2,PS2566L-1,-2 [MEMO] 14 PS2566-1,-2,PS2566L-1,-2 [MEMO] 15 PS2566-1,-2,PS2566L-1,-2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5