NEC PS2566L-2-V

DATA SHEET
PHOTOCOUPLER
PS2566-1,-2, PS2566L-1,-2
HIGH ISOLATION VOLTAGE
AC INPUT, DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
DESCRIPTION
The PS2566-1, -2 and PS2566L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an
NPN silicon darlington connected phototransistor.
PS2566-1, -2 are in a plastic DIP (Dual In-line Package) and PS2566L-1, -2 are lead bending type (Gull-wing) for
surface mount.
FEATURES
• AC input response
• High isolation voltage
BV = 5 000 Vr.m.s.: standard products
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)
• High current transfer ratio (CTR = 2 000 % TYP.)
• High-speed switching (tr, tf = 100 µs TYP.)
• UL approved (File No. E72422 (S) )
• CSA approved (No. CA 101391)
• BSI approved (BS415, BS7002) No. 7112
• SEMKO approved (SS4410165) No. 9317144
• NEMKO approved (NEK-HD 195S6) No. A21409
• DEMKO approved (Section 101, 137) No. 300535
• FIMKO approved (E69-89) No. 167265-08
• VDE0884 approved (Option)
APPLICATIONS
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The information in this document is subject to change without notice.
Document No. P12992EJ4V0DS00 (4th edition)
(Previous No. LC-2228)
Date Published August 1997 NS
Printed in Japan
The mark
shows major revised points.
©
1992
PS2566-1,-2,PS2566L-1,-2
PACKAGE DIMENSIONS (in millimeters)
DIP Type
PS2566-1
PS2566-1 (New Package)
4 3
4 3
5.1 MAX.
4.6 ± 0.35
1 2
1 2
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
6.5
6.5
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
7.62
1.25±0.15
0.50 ± 0.10
0.25 M
4.55
MAX.
3.8
MAX.
2.8
MIN.
0.65
0.65
2.8
MIN.
4.55
MAX.
3.8
MAX.
7.62
1.25±0.15
0 to 15˚
0.50 ± 0.10
0.25 M
2.54
2.54
PS2566-2
PS2566L1-1
8 7 6 5
4 3
10.2 MAX.
1 2
1 2 3 4
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
6.5
6.5
5.1 MAX.
10.16
7.62
0.50 ± 0.10
0.25 M
Caution New package 1ch only
2
4.55
MAX.
3.8
MAX.
0.65
3.8
MAX.
0.35
2.54
0 to 15˚
2.8
MIN.
4.25
MAX.
2.8
MIN.
7.62
1.25±0.15
0 to 15˚
0.50 ± 0.10
0.25 M
1.25±0.15
2.54
0 to 15˚
PS2566-1,-2,PS2566L-1,-2
Lead Bending Type
PS2566L-1 (New Package)
PS2566L-1
4 3
4 3
4.6 ± 0.35
5.1 MAX.
1 2
1 2
7.62
0.90 ± 0.25
1.25±0.15
0.25 M
9.60 ± 0.4
9.60 ± 0.4
2.54
2.54
PS2566L-2
PS2566L2-1
8 7 6 5
4 3
5.1 MAX.
10.2 MAX.
1 2
1 2 3 4
0.9 ± 0.25
10.16
2.54
12.0 MAX.
7.62
0.05 to 0.2
6.5
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
3.8
MAX.
3.8
MAX.
7.62
0.05 to 0.2
6.5
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1.25±0.15
0.25 M
0.05 to 0.2
6.5
0.90 ± 0.25
1.25±0.15
0.25 M
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
3.8
MAX.
3.8
MAX.
7.62
0.05 to 0.2
6.5
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
0.90 ± 0.25
9.60 ± 0.4
1.25±0.15
0.25 M
2.54
Caution New package 1ch only
3
PS2566-1,-2,PS2566L-1,-2
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
PS2566-1
PS2566L-1
PS2566L1-1
PS2566L2-1
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface
mount)
PS2566-2
PS2566L-2
8-pin DIP
8-pin DIP (lead bending surface mount)
PS2566-1-V
PS2566L-1-V
PS2566L1-1-V
PS2566L2-1-V
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface
mount)
PS2566-2-V
PS2566L-2-V
8-pin DIP
8-pin DIP (lead bending surface mount)
Standard products
• UL approved
• BSI approved
• DEMKO approved
• FIMKO approved
PS2566-1
• CSA approved
• NEMKO approved
• SEMKO approved
PS2566-2
VDE0884 approved products (Option)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Symbol
Ratings
PS2566-1,
PS2566L-1
Diode
Forward Current (DC)
IF
Power Dissipation Derating
Power Dissipation
*1
Peak Forward Current
Transistor
Unit
PS2566-2,
PS2566L-2
80
mA
∆PD/°C
1.5
1.2
mW/°C
PD
150
120
mW/ch
IFP
1
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
6
V
Collector Current
Power Dissipation Derating
Power Dissipation
*2
IC
200
160
mA/ch
∆PC/°C
2.0
1.6
mW/°C
PC
200
160
mW/ch
Isolation Voltage
BV
5 000
*3
3 750
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*3 VDE0884 approved products (Option)
4
PS2566-1
PS2566-2
*1 As applying to Safety Standard, following part number should be used.
Parameter
Application part
*1
number
PS2566-1,-2,PS2566L-1,-2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
1.4
V
Forward Voltage
VF
IF = ±10 mA
1.17
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
100
pF
Transistor
Collector to Emitter Dark
Current
ICEO
VCE = 40 V, IF = 0 mA
Coupled
Current Transfer Ratio
CTR
IF = ±1 mA, VCE = 2 V
200
2 000
CTR Ratio
CTR1/
CTR2
IF = 1 mA, VCE = 2 V
0.3
1.0
Collector Saturation
Voltage
VCE (sat)
IF = ±1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kV
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.5
pF
VCC = 10 V, IC = 10 mA, RL = 100 Ω
100
µs
*1
Rise Time
Fall Time
*2
tr
*2
IF2
nA
%
3.0
1.0
V
Ω
11
10
tf
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2
IF1
400
100
*2 Test circuit for switching time
IC1
VCE
IC2
Pulse Input
IF
VCC
PW = 1 ms
Duty Cycle = 1/10
50 Ω
VOUT
RL = 100 Ω
5
PS2566-1,-2,PS2566L-1,-2
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
150
PS2566-1
PS2566L-1
100
PS2566-2
PS2566L-2
1.5 mW/˚C
50
1.2 mW/˚C
0
25
50
75
100
125
2 mW/˚C
100
1.6 mW/˚C
50
25
50
75
100
125
Ambient Temperature TA (˚C)
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
60
TA = +100 ˚C
+60 ˚C
+25 ˚C
Forward Current IF (mA)
Forward Current IF (mA)
PS2566-2
PS2566L-2
80
50
10
5
0 ˚C
–25 ˚C
–55 ˚C
1
0.5
0.7
40
20
0
–20
–40
–60
0.1
0.8
0.9
1.0
1.1
1.2
1.4
1.3
–80
1.5
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
Forward Voltage VF (V)
Forward Voltage VF (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
VCE = 2 V
5V
10 V
24 V
40 V
1000
100
10
1
–50
10 mA
100
10 000
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
PS2566-1
PS2566L-1
150
0
150
100
–25
0
25
50
75
Ambient Temperature TA (˚C)
6
200
100
5 mA
50
1 mA
10
0.5 mA
5
0.2 mA
1
0.5
0.2
0.4
IF = 0.1 mA
0.6
0.8
1.0
1.2
1.4
Collector Saturation Voltage VCE(sat) (V)
1.6
PS2566-1,-2,PS2566L-1,-2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Normalized Current Transfer Ratio CTR
160
5 mA
Collector Current IC (mA)
140
120
100
80
2 mA
60
40
1 mA
20
IF = 0.5 mA
0
2
4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
6
8
1.4
Normalized to 1.0
at TA = 25 ˚C,
IF = 1 mA, VCE = 2 V
1.2
1.0
0.8
0.6
0.4
0.2
–50
10
–25
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
75
100
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
8 000
7 000
6 000
5 000
4 000
3 000
2 000
1 000
Current Transfer Ratio CTR (%)
3 000
VCE = 2 V
0
0.1
0.5
1
5
10
VCE = 2 V
2 500
2 000
1 500
1 000
500
0
30
10
50
SWITCHING TIME vs.
LOAD RESISTANCE
10 000
VCC = 5 V,
500 IC = 2 mA,
CTR = 2 280 %
tf
Switching Time t ( µ s)
5 000
100
tr
td
10
5
2
30 50
500
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
50
100
Forward Current IF ( µ A)
Forward Current IF (mA)
Switching Time t ( µ s)
50
25
Ambient Temperature TA (˚C)
Collector to Emitter Voltage VCE (V)
Current Transfer Ratio CTR (%)
0
ts
tf
VCC = 5 V,
IF = 1 mA,
CTR = 2 280 %
1 000
500
ts
100
50
tr
10
td
100
500
1k
Load Resistance RL (Ω)
5k
300 500
1k
5k
10 k
50 k 100 k
Load Resistance RL (Ω)
7
PS2566-1,-2,PS2566L-1,-2
LONG TIME CTR DEGRADATION
FREQUENCY RESPONSE
1.2
IF = 1 mA,
VCE = 2 V
–5
–10
–15
RL = 100 Ω
0.5
1
2
5
10 20
Frequency f (kHz)
8
TA = 25 oC
0.8
TA = 60 oC
0.6
0.4
0.2
–20
0.2
IF = 1 mA (TYP.)
1.0
CTR (Relative Value)
Normalized Gain GV
0
50 100 200
0
10
102
103
104
Time (Hr)
105
106
PS2566-1,-2,PS2566L-1,-2
TAPING SPECIFICATIONS (in millimeters)
4.3±0.2
10.3±0.1
7.5±0.1
1.55±0.1
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
1.55±0.1
5.6±0.1
8.0±0.1
Taping Direction
PS2566L-1-E3
PS2566L-1-F3
PS2566L-1-E4
PS2566L-1-F4
R 1.0
φ 21.0±0.8
φ 80.0±5.0
2.0±0.5
φ 13.0±0.5
PS2566L-1-E3, E4: φ 250
PS2566L-1-F3, F4: φ 330
Outline and Dimensions (Reel)
16.4 +2.0
–0.0
Packing: PS2566L-1-E3, E4 1 000 pcs/reel
PS2566L-1-F3, F4 2 000 pcs/reel
9
PS2566-1,-2,PS2566L-1,-2
4.3±0.2
10.3±0.1
7.5±0.1
1.55±0.1
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
10.4±0.1
1.55±0.1
12.0±0.1
Taping Direction
PS2566L-2-E3
PS2566L-2-E4
Outline and Dimensions (Reel)
φ 21.0±0.8
φ 80.0±5.0
R 1.0
φ 330
2.0±0.5
φ 13.0±0.5
16.4 +2.0
–0.0
Packing: 1 000 pcs/reel
10
PS2566-1,-2,PS2566L-1,-2
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature
235 °C (package surface temperature)
• Time of temperature higher than 210 °C
30 seconds or less
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Time (s)
Caution Please avoid to removed the residual flux by water after the first reflow processes.
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature
260 °C or below (molten solder temperature)
• Time
10 seconds or less
• Number of times
One
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
11
PS2566-1,-2,PS2566L-1,-2
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Symbol
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
Unit
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
Dielectric strength maximum operating isolation voltage
Test voltage (partial discharge test procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
Speck
55/100/21
UIORM
Upr
890
1 068
Vpeak
Vpeak
Test voltage (partial discharge test procedure b for random test)
Upr = 1.6 × UIORM, Pd < 5 pC
Upr
1 424
Vpeak
Highest permissible overvoltage
UTR
6 000
Vpeak
Degree of pollution (DIN VDE 0109)
2
Clearance distance
> 7.0
mm
Creepage distance
> 7.0
mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
CTI
Material group (DIN VDE 0109)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
Ris MIN.
Ris MIN.
10
11
10
Ω
Ω
Tsi
Isi
Psi
175
400
700
°C
mA
mW
Ris MIN.
10
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi)
12
12
9
Ω
PS2566-1,-2,PS2566L-1,-2
[MEMO]
13
PS2566-1,-2,PS2566L-1,-2
[MEMO]
14
PS2566-1,-2,PS2566L-1,-2
[MEMO]
15
PS2566-1,-2,PS2566L-1,-2
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5