DATA SHEET MOS INTEGRATED CIRCUIT µPD16875 DUAL Pch HIGH-SIDE SWITCH FOR USB DESCRIPTION The µPD16875 is a power switch IC with an overcurrent limiter that is used for the power bus of a Universal Serial Bus (USB). This product has two Pch power MOSFET circuits, each of which has a low-on resistance (100 mΩ TYP.), in its switching block. This product is a low-current-consumption version of the µPD16855B that boasts an operating current consumption of as low as 100 µA (MAX.). In addition, the IC is also equipped with an overcurrent detector that is essential for a host/hub controller conforming to the USB Standard, so that the IC can report an overcurrent to the controller. Moreover, a thermal shutdown circuit and an undervoltage lockout circuit are also provided as the protection circuits of the IC. This product has two channels of power switches, control input pins, and flag output pins to simultaneously control two USB ports with a single IC. FEATURES • Two P-ch power MOSFET circuits • Overcurrent detector that outputs active-low control signal from detection report pin • Overcurrent limiter to prevent system voltage drop • Thermal shutdown circuit • Undervoltage lockout circuit • Each of two circuits can be turned on and off independently of the others by a control pin. • 8-pin SOP package ORDERING INFORMATION Part Number Package µPD16875G 8-pin SOP (5.72 mm (225)) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13895EJ1V0DS00 (1st edition) Date Published February 2001 N CP(K) Printed in Japan © 2001 µPD16875 BLOCK DIAGRAM IN (Input) 7 OUT1 (Output 1) 8 Reference voltage Overcurrent detection block FLG1 (Flag output 1) 5 OUT2 (Output 2) 3 FLG2 (Flag output 2) Reference voltage Gate control 2 Gate control Overvoltage lockout circuit Overcurrent detection block Thermal shutdown circuit 6 1 4 GND CTL1 (Control input 1) CTL2 (Control input 2) NOTES ON CORRECT USE • No internal resistor is connected to input pins CTL1 (pin 1) and CTL2 (pin 4). When using the µPD16875, therefore, be sure to set the voltage level of these input pins to “H” or “L”. 2 Data Sheet S13895EJ1V0DS µPD16875 PIN CONFIGURATION (Top View) CTL1 1 8 OUT1 FLG1 2 7 IN FLG2 3 6 GND CTL2 4 5 OUT2 8-pin SOP PIN DESCRIPTION Pin No. Pin Name Pin Function 1/4 CTL1/CTL2 Control input: Active-low, TTL input 2/3 FLG1/FLG2 Detection flag (output): Active-low, Nch open-drain 6 GND 7 IN 8/5 OUT1/OUT2 Ground Power input: Source of MOSFET for output. Power supply to internal circuitry of IC Switch output: Drain of MOSFET for output. Usually, connected to load. TRUTH TABLE (H: High level, L: Low level, ON: Output on, OFF: Output off, X: H or L) CTL1 (In) FLG1 (Out) OUT1 (Out) CTL2 (In) FLG2 (Out) OUT2 (Out) L H ON L H ON Normal operation L H ON H H OFF Only OUT1 is on. H H OFF L H ON Only OUT2 is on. H H OFF H H OFF Standby mode L L ON L H ON Overcurrent detection only for OUT1 L H ON L L ON Overcurrent detection only for OUT2 X L OFF X L OFF Thermal shutdown circuit operation X L OFF X L OFF Undervoltage lockout circuit operation Data Sheet S13895EJ1V0DS Operation mode 3 µPD16875 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25°°C) Parameter Symbol Conditions Ratings Unit Input voltage VIN −0.3 to +6 V Flag voltage VFLG −0.3 to +6 V Flag current IFLG 50 mA Output voltage VOUT VIN+0.3 V Output current IOUT +0.5 (VIN = VCTL = 5 V) A DC −0.1 (VIN = 0 V, VOUT = 5 V) Pulse width ≤ Single 100 µs pulse −0.3 to +6 V PD 300 mW TA −40 to +85 °C +150 °C −55 to +150 °C Control input VCTL Total power dissipation Operating temperature range Note +3 Junction temperature TCH MAX Storage temperature Tstg Note This product has an internal thermal shutdown circuit (operating temperature: 150°C or higher TYP.) RECOMMENDED OPERATING RANGE (Unless otherwise specified, TA = 25°°C) Parameter Symbol MIN. TYP. MAX. Unit Input voltage VIN +4 +5.5 V Operating temperature range TA 0 +70 °C ELECTRICAL SPECIFICATIONS DC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25°°C) Parameter Current consumption Symbol IDD Conditions MIN. TYP. MAX. Unit 1 5 µA VCTL = 0 V, OUT: open 100 µA 1.0 V VCTL = VIN (Both 1 pin & 4 pin), OUT: Open Input voltage, low VIL CTL pin Input voltage, high VIH CTL pin Control input current ICTL VCTL = 0 V 0.01 1 µA VCTL = VIN 0.01 1 µA TA = 0 to +70°C, IOUT = 500 mA 100 140 mΩ 10 µA 0.9 1.25 A 2.0 V Output MOSFET on-resistance RON Output leakage current IO LEAK Overcurrent detector threshold ITH TA = 0 to +70°C Flag output resistance RON F IL = 10 mA 10 25 Ω Flag leakage current IO LEAK F VFLAG = 5 V 0.01 1 µA Undervoltage lockout circuit operating voltage VUVLO VIN: When rising 2.2 2.5 2.8 V VIN: When falling 2.0 2.3 2.6 V Hysteresis width 0.05 0.25 V 4 Data Sheet S13895EJ1V0DS 0.6 µPD16875 ELECTRICAL SPECIFICATIONS AC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit 2.5 5 8 ms 10 µs Output transition rise time (ON) tRISE RL = 10 Ω per output Output transition fall time (OFF) tFALL RL = 10 Ω per output Overcurrent detection delay time tOVER Overcurrent detection output rise time tSRISE RL = 10 Ω per output 2.5 Minimum CTL high time tCTL CTL : L→H→L 20 µs 20 5 8 ms µs POINTS OF MEASUREMENT Output Transition Rise Time (ON)/Output Transition Fall Time (OFF) CTL pin: H→L/L→H 5 V/3.3 V 90% CTL 0V tRISE tFALL 5V 90% 90% VOUT 10% 0V Overcurrent Detection Delay Time/Minimum CTL High Time ITH IOUT VOUT tOVER tSRISE (Internal time) FLG 90% tCTL CTL 10% 10% Data Sheet S13895EJ1V0DS 5 µPD16875 FUNCTIONAL DESCRIPTION REFERENCE TABLE Function Overcurrent detection Characteristics 0.9A p.7 1. Overcurrent detection Overcurrent detection delay time 20µ s p.7 1. Overcurrent detection Slow-start repeat time 5 ms UVLO operating voltage Operation when power is turned on/off 6 Refer to: Overcurrent detection Threshold Under voltage lockout circuit (UVLO) Thermal shutdown circuit Reference Value (TYP.) p.10 On Detection of Overcurrent VDD L→H 2.5 V VDD H→L 2.3 V Output rise time tRISE 5 ms Output fall time tFALL 1 µs Thermal shutdown circuit operating temperature 150°C or higher Data Sheet S13895EJ1V0DS p.10 On Detection of Overcurrent p.7 2. Under Voltage Lockout Circuit (UVLO) p.8 3. Behavior When Power Is Turned ON/OFF p.11 When Thermal Shutdown Circuit Operates µPD16875 DESCRIPTION OF FUNCTIONS 1. Overcurrent Detection This IC detects an overcurrent in a range of 0.6 to 1.25 A (0.9 A TYP.) (the USB Standard defines that an overcurrent is 0.5 A MAX.). When the IC detects an overcurrent, the FLG pin goes low (active) and reports the result of detection to the control IC. At this time, the switch is kept ON and the current limiter is activated. In this way, an overcurrent status that lasts for a long time can be prevented. By deasserted the CTL pin inactive by the control IC, the switch is turned OFF and the FLG pin goes back high. Therefore, the CTL signal must be deasserted inactive as soon as the controller IC has detected that the FLG pin has gone low, to avoid overheating this IC. Once the switch has been turned OFF, it turns back ON again only when the CTL signal is asserted active while the FLG pin is high. To prevent an inrush current being detected by mistake, a deadband time (overcurrent detection delay time) is set to elapse before the overcurrent detector is activated. The duration of this deadband time is 20 µs TYP. While the overcurrent limiter is activated, the power consumption of the device may abruptly increase. As a result, the junction temperature may also rise. Make sure that the CTL signal is deasserted inactive and that the switch is turned OFF before the absolute maximum rating is exceeded. 2. Undervoltage Lockout Circuit (UVLO) This circuit prevents malfunctioning of the switch due to fluctuation in supply voltage. When power is turned on (2.5 V or less TYP.) or off (2.3 V or less TYP.), the OUT and FLG pins have the following status: OUT: OFF FLG: “L” (= 0 V) 5V Output voltage 2.3 V 2.5 V 5V Input voltage The above figure does not show the actual waveform. For the related characteristic waveform, refer to Major Characteristic Curves. Data Sheet S13895EJ1V0DS 7 µPD16875 3. Behavior When Power Is Turned ON/OFF This IC performs a soft-start operation on power application. This is to prevent an overcurrent from flowing through the IC on power application while the high-capacity capacitor connected to the output pin is charged. Power ON: Soft start (2.5 to 8 ms) Power OFF: No control (10 µs MAX.) 5V Vin 0V 2.5 ms MIN. 8 ms MAX. 10 µ s MAX. 5V Vout 0V The above figure does not show the actual waveform. For the related characteristic waveform, refer to Major Characteristic Curves. 8 Data Sheet S13895EJ1V0DS µPD16875 OPERATION SEQUENCE Power ON/OFF 5V IN (Input) GND 5V OUT (Output) GND 5V Flg (Output) GND 5V 5V CTL (Input) GND Overcurrent detection threshold Iout If the CTL signal is asserted active after power has been turned ON, OUT executes the soft-start operation (output transition time: 8 ms MAX.). In addition, FLG output is fixed to “L” if the supply voltage is lower than the operating voltage of the undervoltage lockout circuit (UVLO) on power application. If all the CTL pins are inactive when power is supplied, the IC enters the standby status (IDD = 5 µA MAX.). When Control Signals Are Input 5V IN (Input) GND 5V OUT (Output) FLG (Output) CTL (Input) GND 5V GND 5V GND Data Sheet S13895EJ1V0DS 9 µPD16875 On Detection of Overcurrent 5V IN (Input) 5V Flg (Output) GND 5V CTL (Input) GND 5V OUT (Output) IOUT GND Overcurrent detection threshold Inrush current Slow Normal Output is short-circuited. start operation period period If an overcurrent is detected after the overcurrent detection delay time of 20 µs, the IC executes a slow-start operation (output rise time: 5 ms TYP.) again. If an overcurrent is detected while the IC is executing the slow-start operation again, it is assumed that the output is short-circuited and the FLG pin goes low. When the CTL signal is deasserted inactive, OUT is turned OFF and FLG goes high. If the CTL signal is asserted active, OUT is turned back ON unless the undervoltage lockout circuit or thermal shutdown circuit is activated. 10 Data Sheet S13895EJ1V0DS µPD16875 When Thermal Shutdown Circuit Operates 5V IN (Input) Standby status Non-standby status GND 5V OUT (Output) FLG (Output) GND 5V GND 5V CTL (Input) Tch GND Thermal shutdown circuit operating temperature (falling) Thermal shutdown circuit operating temperature (rising) While the thermal shutdown circuit is activated, the output pins are in the OFF status. However, the IC does not enter the standby status even if all the CLT pins are deasserted inactive at the same time. The thermal shutdown circuit is not activated even if the junction temperature exceeds 150°C TYP. while the IC is in the standby mode (when CTL1 and CTL2 pins are inactive). TEST CIRCUIT 5V 10 kΩ 10 kΩ 10 Ω CTL A OUT A FLG A IN FLG B GND CTL B OUT B 1 µF 10 Ω µ PD16875 Data Sheet S13895EJ1V0DS 11 µPD16875 MAJOR CHARACTERISTIC CURVES (Unless otherwise specified, TA = 25°°C, VIN = 5 V) Total Power Dissipation PT vs. Ambient Temperature TA Total consumption PT (mW) 400 300 200 100 0 −40 0 40 80 120 160 200 Ambient temperature TA (˚C) Output On-Resistance RON vs. Supply Voltage VIN 120 100 80 60 40 20 0 −20 0 20 40 60 80 Output on-resistance RON (mΩ) Output on-resistance RON (mΩ) Output On-Resistance RON vs. Ambient Temperature TA 140 140 120 100 80 60 40 20 0 3.5 4.0 4.5 Ambient temperature TA (˚C) 120 100 80 60 40 20 0 20 40 60 60 40 20 4.0 0.06 0.04 0.02 60 Ambient temperature TA (˚C) 80 Current consumption in standby mode ( µ A) Current consumption in standby mode ( µ A) 12 0.08 40 4.5 5.0 5.5 6.0 6.5 Supply voltage (V) Current Consumption (Standby) IDD vs. Ambient Temperature TA 20 6.5 80 0 3.5 80 0.10 0 6.0 100 Ambient temperature TA (˚C) 0.00 −20 5.5 Current Consumption IDD vs. Supply Voltage VIN Current consumption ( µ A) Current consumption ( µ A) Current Consumption IDD vs. Ambient Temperature TA 140 0 −20 5.0 Supply voltage (V) Current Consumption (Standby) IDD vs. Supply Voltage VIN 0.10 0.08 0.06 0.04 0.02 0.00 3.5 Data Sheet S13895EJ1V0DS 4.0 4.5 5.0 5.5 Supply voltage (V) 6.0 6.5 µPD16875 MAJOR CHARACTERISTIC CURVES (Unless otherwise specified, TA = 25°°C, VIN = 5 V) Input Voltage VI vs. Ambient Temperature TA Input Voltage VI vs. Supply Voltage VIN 1.70 1.70 Input voltage, low VIL (V) Input voltage, high VIH (V) Input voltage, low VIL (V) Input voltage, high VIH (V) 1.80 VIH 1.60 VIL 1.50 1.40 1.30 −20 0 20 40 60 1.65 1.60 1.55 1.50 3.5 80 VIH VIL 4.0 4.5 Ambient temperature TA (˚C) 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 1.0 0.8 0.6 0.4 0.2 0.0 3.5 4.0 4.5 Voltage (V) Voltage (V) Undervoltage lockout circuit operating voltage VUVLO (V) 6.0 6.5 6 3 Output voltage 5 4 2 1 0 0 2 3 4 Output voltage 3 1 1 5.5 Output Fall Delay Time Characteristics 4 0 5.0 Supply voltage (V) Input voltage 2 6.5 1.2 Output Rise Delay Time Characteristics 5 6.0 1.4 Ambient temperature TA (˚C) 6 5.5 Overcurrent Threshold ITH vs. Supply Voltage VIN Overcurrent detection value (A) Overcurrent detection value (A) Overcurrent Threshold ITH vs. Ambient Temperature TA 1.4 0.0 −20 5.0 Supply voltage (V) 0 0.4 0.8 1.2 Time ( µ s) Time ( µ s) Undervoltage Lockout Circuit Operating Voltage Characteristics 50 40 UVLO (L H) 30 20 UVLO (H L) 10 00 −20 0 20 40 60 80 Ambient temperature TA (˚C) Data Sheet S13895EJ1V0DS 13 µPD16875 APPLICATION CIRCUIT Application Circuit 1 5V VBUS D+ D− GND D+ D− 10 kΩ CTL A OUT A FLG A IN FLG B GND CTL B OUT B Over current Enable 1µ F 150 µ F µ PD16875 USB controller USB output port: 1 port Controllable by USB controller (CTL input: Active low) Application Circuit 2 3.3 V 5V VBUS D+ D− D+ D− 10 kΩ Over current 10 kΩ CTL A OUT A FLG A IN FLG B GND CTL B OUT B GND 1 µF 150 µ F 150 µ F Enable µ PD16875 VBUS D+ D− GND USB controller USB connector USB output port: 2 ports Controllable by USB controller (CTL input: Active low) The application circuits and their parameters are for references only and are not intended for use in actual designin’s. 14 Data Sheet S13895EJ1V0DS µPD16875 PACKAGE DRAWING 8-Pin Plastic SOP (5.72 mm (225)) (Unit: mm) 5 5.37 MAX. 6.0±0.3 4 4.4 0.15 +0.10 −0.05 1.44 1 0.05 MIN. 1.8 MAX 8 0.78 MAX 0.5±0.2 0.8 0.10 1.27 0.40 +0.10 −0.05 0.12 M Data Sheet S13895EJ1V0DS 15 µPD16875 RECOMMENDED SOLDERING CONDITIONS The µPD16875 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended, contact your NEC sales representative. Surface Mount Type For the details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). µPD16875G Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Package peak temperature: 235°C, Time: 30 sec. Max. (at 210°C or higher), Note Count: two times, Exposure limit: Not limited IR35-00-2 VPS Package peak temperature: 215°C, Time: 40 sec. Max. (at 200°C or higher), Note Count: two times, Exposure limit: Not limited VP15-00-2 Wave soldering Solder bath temperature: 260°C Max., Time: 10 sec. Max., Count: once, Note Exposure limit: not limited WS60-00-1 Partial heating Pin temperature: 300°C Max., Time: 3 sec. Max., Exposure limit: not limited Note Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Cautions Do not use different soldering methods together (except for partial heating). REFERENCE 16 Quality Grades on NEC semiconductor Devices C11531E Semiconductor Device Mounting Technology Manual C10535E NEC Semiconductor Device Reliability/Quality Control System C10983E Semiconductor Selection Guide X10679X Data Sheet S13895EJ1V0DS µPD16875 [MEMO] Data Sheet S13895EJ1V0DS 17 µPD16875 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 18 Data Sheet S13895EJ1V0DS µPD16875 Regional Information Some information contained in this document may vary from country to country. Before using any NEC product in your application, pIease contact the NEC office in your country to obtain a list of authorized representatives and distributors. They will verify: • Device availability • Ordering information • Product release schedule • Availability of related technical literature • Development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, AC supply voltages, and so forth) • Network requirements In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country. NEC Electronics Inc. (U.S.) NEC Electronics (Germany) GmbH NEC Electronics Hong Kong Ltd. Santa Clara, California Tel: 408-588-6000 800-366-9782 Fax: 408-588-6130 800-729-9288 Benelux Office Eindhoven, The Netherlands Tel: 040-2445845 Fax: 040-2444580 Hong Kong Tel: 2886-9318 Fax: 2886-9022/9044 NEC Electronics Hong Kong Ltd. Velizy-Villacoublay, France Tel: 01-30-67 58 00 Fax: 01-30-67 58 99 Seoul Branch Seoul, Korea Tel: 02-528-0303 Fax: 02-528-4411 NEC Electronics (France) S.A. NEC Electronics Singapore Pte. Ltd. Milton Keynes, UK Tel: 01908-691-133 Fax: 01908-670-290 Madrid Office Madrid, Spain Tel: 91-504-2787 Fax: 91-504-2860 United Square, Singapore Tel: 65-253-8311 Fax: 65-250-3583 NEC Electronics Italiana s.r.l. NEC Electronics (Germany) GmbH Milano, Italy Tel: 02-66 75 41 Fax: 02-66 75 42 99 Scandinavia Office Taeby, Sweden Tel: 08-63 80 820 Fax: 08-63 80 388 NEC Electronics (France) S.A. NEC Electronics (Germany) GmbH Duesseldorf, Germany Tel: 0211-65 03 02 Fax: 0211-65 03 490 NEC Electronics (UK) Ltd. NEC Electronics Taiwan Ltd. Taipei, Taiwan Tel: 02-2719-2377 Fax: 02-2719-5951 NEC do Brasil S.A. Electron Devices Division Guarulhos-SP Brasil Tel: 55-11-6462-6810 Fax: 55-11-6462-6829 J00.7 Data Sheet S13895EJ1V0DS 19 µPD16875 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4