uPD166005 DS - Renesas Electronics

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DATA SHEET
MOS INTEGRATED CIRCUIT
μ PD166005
SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE
DESCRIPTION
The μ PD166005 is N-channel high side driver with charge pump, diagnostic function, embedded protection functions.
When the device is over temperature or over current is generated in output MOS, the protection function operates while
the built-in diagnosis output signal is output. In addition, the built-in diagnosis signal is output when open status of the
output pin is detected.
FEATURES
•
High temperature operation (Tch = 175°C MAX.)
•
Built-in charge pump circuit
•
Low on-state resistance
•
Built-in protection circuit
RDS(on) = 100 mΩ MAX. (VIN = VIH, IO = 1.5 A, Tch = 25°C)
- Current limitation
- Over temperature protection
•
Built-in open load detection circuit
•
Built-in diagnosis output circuit
•
Package: Power SOP 8
ORDERING INFORMATION
Part Number
Note
μ PD166005GR-E1-AZ
Note
μ PD166005GR-E2-AZ
Lead plating
Packing
Package
Sn-Bi
Tape 2500 p/reel
Power SOP 8
Sn-Bi
Tape 2500 p/reel
Power SOP 8
Note Pb-free (This product does not contain Pb in the external electrode.)
QUALITY GRADE
Part Number
Quality Grade
Note
μ PD166005GR-E1-AZ
Note
μ PD166005GR-E2-AZ
Special
Special
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
APPLICATION
•
Switching of types of 14 V loads such as L load, resistance and capacity.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S19284EJ1V0DS00 (1st edition)
Date Published July 2008 NS
Printed in Japan
2008
μ PD166005
BLOCK DIAGRAM
5V
Vbat
ICC
5, 6, 7, 8
VCC
IDIAG
Charge Pump
Internal
Power Supply
Current
Detector
2
Diagnosis
DIAG (Nch open drain)
1
IN
Control Logic
RDIAG
Power Supply
Voltage Sense
ROPEN
VO
4
OUT
Output Voltage
Sense
IOHL
IO
IIN
VDIAG
Temperature
Sensor
Load
VOUT
VIN
GND
3
PIN CONFIGURATION
• Power SOP 8
Top View
IN
1
8
VCC
DIAG
2
7
VCC
GND
3
6
VCC
OUT
4
5
VCC
PIN FUNCTIONS
Pin No.
2
Pin Name
Function
1
IN
Input pin
2
DIAG
DIAG output pin
3
GND
Ground pin
4
OUT
High side output pin
5
VCC
Power supply pin
6
VCC
Power supply pin
7
VCC
Power supply pin
8
VCC
Power supply pin
Data Sheet S19284EJ1V0DS
VCC
μ PD166005
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Power supply voltage
Condition
VCC1
VCC2
RS = 1 Ω, τ = 250 ms
Rating
Unit
−0.3 to +35
V
60
V
V
mA
Input voltage
VIN
−0.5 to +7.0
Input current
IIN
±10
Output current
IOA
2
A
Output negative voltage
VOA
VCC − 60
V
Power dissipation
PD
1.0
W
Operation temperature
Topt
−40 to +125
°C
Storage temperature
Tstg
−55 to +175
°C
DIAG output voltage
VDIAG
7.0
V
DIAG output current
IDIAG
10
mA
TA = 25°C
Note
Note When mounted on a glass substrate epoxy (where FR-4 is 10 cm x 10 cm, dimension of copper foil is 15% and
thickness of copper foil is 35 μm)
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameters. That is, the absolute maximum ratings are rated values at which the product is on the
verge of suffering physical damage, and therefore the product must be used under conditions that
ensure that the absolute maximum ratings are not exceeded.
The ratings and conditions indicated for DC characteristics and AC characteristics represent the quality
assurance range during normal operation.
RECOMMENDED OPERATIONG CONDITIONS (TA = −40°C to +125°C, unless otherwise specified)
Parameter
Power supply voltage
Symbol
VCC
Conditions
VIH = 3 V, VO = VCC − 0.4 V (RL = 9.3 Ω),
MIN.
4.5
TYP.
MAX.
Unit
16
V
VIL = 1 V, VO = 0.2 V (RL = 9.3 Ω),
VDIAG = 0.5 V (IDIAG = 0.6 mA)
Input voltage
VIH
VCC = 4.5 to 16 V
VIL
VCC = 8 to 16 V
3
7.0
V
0
1.0
V
0
1.5
A
Output current
IOA
DIAG output voltage
VDIAG
0
7.0
V
DIAG output current
IDIAG
0
0.6
mA
Data Sheet S19284EJ1V0DS
3
μ PD166005
ELECTRICAL SPECIFICATIONS (VCC = 8 to 16 V, Tch = −40 to +175°C, unless otherwise specified)
Parameter
Symbol
Input voltage
VIH
Conditions
MIN.
VCC = 4.5 to 16 V
VIL
Input current
Standby current
Note1
Output leakage current
V
1.0
V
400
μA
4
mA
VIN = 5.5 V
30
−10
ICCH
VIN = VIH
μA
ICCL
VIN = VIL
0.2
mA
IOH1
VIN = VIL, VO = VCC
2000
μA
IOH2
VIN = VIL, VO = 4 V
400
μA
μA
−240
VIN = VIL, VO = 0 V
VCC = 4.5 to 16 V, IDIAG = 0.6 mA
DIAG output leakage current
IDIAG
VDIAG = 7.0 V
Open load detection
VOIH
VIN = 0 V, VDIAG changing point (L→H)
Load connection detection
VOIL
VIN = 0 V, VDIAG changing point (H→L)
Drain to source on-state
RDS(on)
VIN = VIH, IO = 1.5 A
resistance
Over temperature detection
7.0
VIN = 0 V
IOL
0.5
V
10
μA
1.45
V
4
V
Tch = 25°C
80
100
mΩ
Tch = 150°C
150
180
mΩ
(10)
A
IS
Note2
Unit
0
IIL
VDIAG
Note2
MAX.
3
IIH
DIAG output low level voltage
Over current detection
TYP.
2
Tth
°C
(175)
5
50
μs
50
200
μs
30
200
μs
20
200
μs
200
μs
RL = 9.3 Ω, VCC = 14 V
Turn on delay time
tD(ON)
Turn off delay time
tD(OFF)
Rise time
tON
Fall time
tOFF
DIAG output delay time
tDpd
RL = 13 Ω, VCC = 14 V
Negative output voltage
−VO
IO = −60 mA
VCC − 50
V
Output oscillation cycle at over
tS
Over current
14
ms
30
%
current condition
Output on duty at over current
DS
condition
Notes 1. OUT current and DIAG current are not included.
2. ( ) is a reference value.
TRUTH TABLE
MEASUREMENT CONDITION
50%
Input voltage
Parameter
50%
Normal operation
Over temperature detection
tD(OFF)
tD(ON)
90%
90%
tOFF
H
H
H
L
L
L
H
L
L
L
L
H
Chopping
L
L
L
L
Open load detection
H
H
H
L
H
H
90%
tDpd
DIAG output voltage
4
VDIAG
L
10%
tON
VOUT
Over current detection
Output voltage
10%
VIN
Data Sheet S19284EJ1V0DS
μ PD166005
OUTLINE OF FUNCTIONS
Pre-Driver (Charge Pump Circuit) ON/OFF Control
When the input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch) turns on.
When the output voltage of the input pin (IN) is low level (1.0 V or less), the output MOS (Nch) turns off.
Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side.
Over Current Detection Circuit
This circuit detects over current to output pin (OUT) caused by short circuit etc., and feeds back detection signal to
control circuit.
When the over current is detected, the current limitation circuit and the control circuit start operation. The output current
is restricted and chopping operation begins. The DIAG output is low level at this time.
Over temperature Detection Circuit
This circuit detects over temperature by output MOS (Nch) driving, and feeds back detection signal to control circuit.
When the circuit detects over temperature, the protection function of the control circuit operates and output is shutdown.
Output MOS (Nch) automatically restarts when channel temperature cools down after shutdown.
“H”
5V
VIN
“L”
“L”
GND
VCC
VOUT
THIH
THIL
Tch
Open Load Detection Circuit
This circuit detects connection/open load of output pin (OUT) when OFF (VIN = VIL).
When using the open load detection function, pull-up the output pin (OUT) to VCC. (Recommended value: 5.1 kΩ±10%)
Open load is detected by inputting low level input voltage (1.0 V or less) to input pin (IN). DAIG pin outputs Hi-Z (pull-up:
high level) when the output pin is open.
5V
VIN
“L”
“H”
“L”
VOUT
OFF
ON
OFF
OFF
VDIAG
ON
OFF
ON
OFF
GND
VCC
5 V (Pull-up)
ON
GND
Open load condition
Remark The pull-up resistance does not affect other circuits and electronic characteristics.
Diagnostic Output Circuit
This circuit controls output of diagnosis signal form DIAG pin when Over current or Over temperature or Open load is
detected.
Data Sheet S19284EJ1V0DS
5
μ PD166005
TIMING CHART
Over temperature release
Over
temperature
detection
VIN
Over current
detection
Over current release
VOUT
VDIAG
Normal operation
Over temperature
detection
Normal operation
Over current detection
Normal operation
EXAMPLE OF APPLICATION CIRCUIT
Vbat
5V
Micro.
1)
μ PD166005
R
2)
VCC
INPUT PORT
DIAG
R
5.1 kΩ
R
OUTPUT PORT
IN
OUT
3)
GND
GND
Load
Cautions 1. DIAG pin is Nch open drain structure. When using diagnostic function, pull-up DIAG pin to 5 V.
(power supply lines such as Microcomputer)
2. When using Open load detection function, Pull-up OUT pin to VCC.
(Recommended value: 5.1 kΩ±10%) (The pull-up resistance does not affect other circuits and
electronic characteristics.)
3. If output load voltage exceeds VCC − 50 V when L load is driven, it is necessary to protect this
product with an external rectifying diode or zener diode.
4. This circuit diagram is shown as an example of connection, and is not intended for mass production
design.
6
Data Sheet S19284EJ1V0DS
μ PD166005
INPUT VOLTAGE vs. POWER SUPPLY VOLTAGE
INPUT VOLTAGE vs. AMBIENT TEMPERATURE
3
3
2.5
VIH
2
VIL
2.5
VIH/VIL - Input Voltage - V
VIH/VIL - Input Voltage - V
TYPICAL CHARACTERISTICS
1.5
1
0.5
VIH
2
VIL
1.5
1
0.5
0
0
0
5
10
15
20
-50
VCC - Power Supply Voltage - V
100
150
200
LOW LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
10
IIL - Low Level Input Current - μA
400
IIH - High Level Input Current - μA
50
TA - Ambient Temperature - °C
HIGH LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
300
200
100
0
6
2
-2
-6
-10
-50
0
50
100
150
200
-50
0
50
100
150
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
STUNDBY CURRENT vs. AMBIENT TEMPERATURE
OUTPUT LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
200
200
IOH - Output Leakage Current - μA
1
ICCH /ICCL - Standby Current - mA
0
0.8
0.6
ICCH
0.4
0.2
ICCL
160
120
0
IOH2
80
40
IOH1
0
-50
0
50
100
150
200
TA - Ambient Temperature - °C
-50
0
50
100
150
200
TA - Ambient Temperature - °C
Data Sheet S19284EJ1V0DS
7
μ PD166005
OUTPUT LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
IOL - Output Leakage Current - μA
0
-20
-40
-60
-80
-100
-50
0
50
100
150
200
TA - Ambient Temperature - °C
0.4
0.3
0.2
0.1
0
0
5
10
15
20
VDIAG - DIAG Output Low Level Voltage - V
0.5
DIAG OUTPUT LOW LEVEL VOLTAGE vs.
AMBIENT TEMPERATURE
0.4
0.3
0.2
0.1
0
-50
0
50
100
150
200
TA - Ambient Temperature - °C
OPEN LOAD/LOAD CONNECTION DETECTION
VOLTAGE vs. POWER SUPPLY VOLTAGE
OPEN LOAD / LOAD CONNECTION DETECTION
VOLTAGE vs. AMBIENT TEMPERATURE
4
4
3.5
3
VOIH
2.5
VOIL
2
1.5
1
0.5
0
0
5
10
15
20
VCC - Power Supply Voltage - V
8
0.5
VCC - Power Supply Voltage - V
VOIH/VOIL - Open Load/Load Connection
Detection Voltage - V
VOIH/VOIL - Open Load/Load Connection
Detection Voltage - V
VDIAG - DIAG Output Low Level Voltage - V
DIAG OUTPUT LOW LEVEL VOLTAGE vs.
POWER SUPPLY VOLTAGE
3.5
3
VOIH
2.5
VOIL
2
1.5
1
0.5
0
-50
0
50
100
150
TA - Ambient Temperature - °C
Data Sheet S19284EJ1V0DS
200
μ PD166005
200
160
120
80
40
0
0
5
10
15
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
POWER SUPPLY VOLTAGE
200
160
120
80
40
0
-50
100
150
OVER CURRENT DETECTION vs.
POWER SUPPLY VOLTAGE
OVER CURRENT DETECTION vs.
AMBIENT TEMPERATURE
200
8
IS - Over Current Detection - A
IS - Over Current Detection - A
50
TA - Ambient Temperature - °C
8
6
4
2
6
4
2
0
0
0
5
10
15
20
-50
VCC - Power Supply Voltage - V
0
50
100
150
200
TA - Ambient Temperature - °C
OUTPUT OSCILLATION CYCLE AT OVER CURRENT
CONDITION vs. AMBIENT TEMPERATURE
OUTPUT OSCILLATION CYCLE AT OVER CURRENT
CONDITION vs. POWER SUPPLY VOLTAGE
7
tS - Output Oscillation Cycle
at Over Current Condition - ms
7
tS - Output Oscillation Cycle
at Over Current Condition - ms
0
VCC - Power Supply Voltage - V
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
5
10
15
20
VCC - Power Supply Voltage - V
-50
0
50
100
150
200
TA - Ambient Temperature - °C
Data Sheet S19284EJ1V0DS
9
μ PD166005
OUTPUT ON DUTY AT OVER CURRENT
CONDITION vs. POWER SUPPLY VOLTAGE
OUTPUT ON DUTY AT OVER CURRENT
CONDITION vs. AMBIENT TEMPERATURE
16
DS - Output On Duty
at Over Current Detection - %
DS - Output On Duty
at Over Current Detection - %
16
14
12
10
8
6
4
2
14
12
10
8
6
4
2
0
0
0
5
10
15
20
-50
VCC - Power Supply Voltage - V
150
200
160
tD(OFF) - Turn Off Delay Time - μs
tD(ON) - Turn On Delay Time - μs
100
TURN OFF DELAY TIME vs.
AMBIENT TEMPERATURE
20
16
12
8
4
140
120
100
80
60
40
20
0
0
-50
0
50
100
150
-50
200
0
50
100
150
200
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
RISE TIME vs. AMBIENT TEMPERATURE
FALL TIME vs. AMBIENT TEMPERATURE
100
100
80
80
tOFF - Fall Time - μs
tON - Rise Time - μs
50
TA - Ambient Temperature - °C
TURN ON DELAY TIME vs.
AMBIENT TEMPERATURE
60
40
60
40
20
20
0
0
-50
0
50
100
150
200
-50
0
50
100
150
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
10
0
Data Sheet S19284EJ1V0DS
200
μ PD166005
DIAG OUTPUT DELAY TIME vs.
AMBIENT TEMPERATURE
NEGATIVE OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
0
−VO - Negative Output Voltage - V
tDpd - DIAG Output Delay Time - μs
160
140
120
100
80
60
40
20
0
-10
-20
-30
-40
-50
-60
-70
-80
-50
0
50
100
150
200
-50
TA - Ambient Temperature - °C
0
50
100
150
200
TA - Ambient Temperature - °C
TRANSIENT THERMAL RESISTANCE CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 125°C/Wi
100
Rth(ch-C) = 30°C/Wi
10
1
0.1
When mounted on a glass substrate epoxy
(where FR-4 is 10 cm x 10 cm, dimension of copper foil is 15% and
thickness of copper foil is 35 μm)
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet S19284EJ1V0DS
11
μ PD166005
5
1
4
6.0 ±0.3
4.4
5.37 MAX.
0.8
0.15
+0.10
–0.05
1.44
8
0.05 MIN.
1.8 MAX.
PACKAGE DRAWING
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel side
Draw-out side
−E1 TYPE
−E2 TYPE
MARKING INFORMATION
This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position
aren't indicated.
6005
Pb-free plating marking
Internal administrative code
1 pin mark
12
Lot code
Data Sheet S19284EJ1V0DS
μ PD166005
RECOMMENDED SOLDERING CONDITIONS
The μ PD166005 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
• μ PD166005GR-E1-AZ
• μ PD166005GR-E2-AZ
Note
: Power SOP 8
Note
: Power SOP 8
Process
Infrared reflow
Conditions
Maximum temperature (package’s surface temperature): 260°C or below,
Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less,
Time at temperature higher than 220°C: 60 seconds or less,
Preheating time at 160°C to 180°C: 60 to 120 seconds, Times: Three times,
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Partial Heating Method
Pin temperature: 300°C or below,
−
Heat time: 3 seconds or less (Per each side of the device),
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Note Pb-free (This product does not contain Pb in the external electrode.)
Data Sheet S19284EJ1V0DS
13
μ PD166005
NOTES FOR CMOS DEVICES
1
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between VIL (MAX) and
VIH (MIN).
2
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
3
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred.
Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded.
The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
4
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
5
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
6
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
14
Data Sheet S19284EJ1V0DS
μ PD166005
• The information in this document is current as of July, 2008. The information is subject to change
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M8E 02. 11-1