DATA SHEET MOS INTEGRATED CIRCUIT µPD3728 7300 PIXELS × 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3728 is a high-speed and high sensitive color CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3728 has 3 rows of 7300 pixels, and it is a 2-output/color type CCD sensor with 2 rows/color of charge transfer register, which transfers the photo signal electrons of 7300 pixels separately in odd and even pixels. Therefore, it is suitable for 600 dpi/A3 high-speed color digital copiers and so on. FEATURES • Valid photocell : 7300 pixels × 3 • Photocell's pitch : 10 µm • Line spacing : 40 µm (4 lines) Red line-Green line, Green line-Blue line • Color filter : Primary colors (red, green and blue), pigment filter (with light resistance 107 lx•hour) • Resolution : 24 dot/mm (600 dpi) A3 (297 × 420 mm) size (shorter side) • Drive clock level : CMOS output under 5 V operation • Data rate : 40 MHz MAX. (20 MHz/1 output) • Output type : 2 outputs in phase/color • Power supply : +12 V • On-chip circuits : Reset feed-through level clamp circuits Voltage amplifiers ORDERING INFORMATION Part Number Package µPD3728D CCD linear image sensor 36-pin ceramic DIP (600 mil) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13878EJ1V0DS00(1st edition) Date published April 1999 N CP(K) Printed in Japan © 1999 µPD3728 BLOCK DIAGRAM 23 24 VOUT5 (Red, odd) 5 GND 6 2 ..... D134 4 Photocell 21 φ TG2 (Green) (Green) 15 φ TG3 (Red) CCD analog shift register Transfer gate ..... D128 GND φ TG1 (Blue) D134 ..... D128 D27 3 ..... 22 Transfer gate CCD analog shift register D27 VOUT6 (Red, even) ..... CCD analog shift register Transfer gate VOUT4 1 (Green, even) 2 (Blue) Transfer gate CCD analog shift register VOUT3 36 (Green, odd) GND Photocell D134 ..... D129 CCD analog shift register Transfer gate D129 35 16 D129 GND 28 S7299 S7300 34 29 S7299 S7300 VOUT1 (Blue, odd) 30 Photocell (Red) S7299 S7300 33 φ2 S1 S2 GND φ1 D128 32 GND S1 S2 VOUT2 (Blue, even) φ 20 S1 S2 31 φ 1L D27 GND φ CLB Transfer gate CCD analog shift register 7 8 9 13 14 VOD φ RB φ10 φ1 φ2 DATA SHEET S13878EJ1V0DS00 µPD3728 PIN CONFIGURATION (Top View) CCD linear image sensor 36-pin ceramic DIP (600 mil) • µPD3728D Output signal 4 (Green, even) VOUT4 1 Ground 1 Output signal 6 (Red, even) VOUT6 3 1 GND 2 1 Ground GND 4 Output signal 5 (Red, odd) VOUT5 5 36 VOUT3 Output signal 3 (Green, odd) 35 GND Ground 34 VOUT1 Output signal 1 (Blue, odd) 33 GND Ground 32 VOUT2 Output signal 2 (Blue, even) Ground Output drain voltage VOD 7 30 φ CLB Reset feed-through level clamp clock Reset gate clock φ RB 8 29 φ 1L Last stage shift register clock 1 Shift register clock 10 φ 10 9 28 φ 20 Shift register clock 20 No connection NC 10 27 NC No connection No connection NC 11 26 NC No connection No connection NC 12 25 NC No connection Shift register clock 1 φ 1 13 24 φ 2 Shift register clock 2 Shift register clock 2 φ 2 14 23 φ 1 Shift register clock 1 22 φ TG1 Transfer gate clock 1 (for Blue) 21 φ TG2 Transfer gate clock 2 (for Green) Blue 31 GND Red GND 6 Green Ground 7300 7300 7300 Transfer gate clock 3 (for Red) φ TG3 15 Ground GND 16 No connection NC 17 20 NC No connection No connection NC 18 19 NC No connection PHOTOCELL STRUCTURE DIAGRAM PHOTOCELL ARRAY STRUCTURE DIAGRAM (Line spacing) 10 µm 10 µ m 7 µm Blue photocell array 3 µm 4 lines (40 µm) Channel stopper 10 µm Green photocell array 4 lines (40 µm) 10 µm Red photocell array Aluminum shield DATA SHEET S13878EJ1V0DS00 3 µPD3728 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Output drain voltage VOD –0.3 to +15 V Shift register clock voltage Vφ1, Vφ1L, Vφ10, Vφ2, Vφ20 –0.3 to +15 V Reset gate clock voltage VφRB –0.3 to +15 V Reset feed-through level clamp clock voltage VφCLB –0.3 to +15 V Transfer gate clock voltage VφTG1 to VφTG3 –0.3 to +15 V Operating ambient temperature TA –25 to +60 °C Storage temperature Tstg –40 to +100 °C Caution Exposure to ABSOLUTE MAXIMUM RATINGS for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The parameters apply independently. RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Output drain voltage VOD 11.4 12.0 12.6 V Shift register clock high level Vφ1H, Vφ1LH, Vφ10H, Vφ2H, Vφ20H 4.5 5.0 5.5 V Shift register clock low level Vφ1L, Vφ1LL, Vφ10L, Vφ2L, Vφ20L –0.3 0 +0.5 V Reset gate clock high level VφRBH 4.5 5.0 5.5 V Reset gate clock low level VφRBL –0.3 0 +0.5 V Reset feed-through level clamp clock high level VφCLBH 4.5 5.0 5.5 V Reset feed-through level clamp clock low level VφCLBL –0.3 0 +0.5 V Transfer gate clock high levelNote VφTG1H to VφTG3H 4.5 Vφ1H (Vφ10H) Vφ1H (Vφ10H) V Transfer gate clock low level VφTG1L to VφTG3L –0.3 0 +0.5 V Data rate 2fφRB – 2 40 MHz Note When Transfer gate clock high level (VφTG1H to VφTG3H) is higher than Shift register clock high level (Vφ1H (Vφ10H)), Image lag can increase. Remark Pin 9 (φ10) and pin 28 (φ20) should be open to decrease the influence of input clock noise to output signal waveform, in case of operating at low or middle speed range; data rate under 24 MHz or so. 4 DATA SHEET S13878EJ1V0DS00 µPD3728 ELECTRICAL CHARACTERISTICS TA = +25 °C, VOD = 12 V, fφRB = 1 MHz, data rate = 2 MHz, storage time = 10 ms, light source: 3200 K halogen lamp +C-500S (infrared cut filter, t = 1mm), input signal clock = 5 Vp-p Parameter Symbol Saturation voltage Test Conditions Vsat Saturation exposure MIN. TYP. MAX. Unit 1.5 2.0 – V Red SER 0.35 lx•s Green SEG 0.39 lx•s Blue SEB 0.31 lx•s Photo response non-uniformity 6 18 % 1.0 5.0 mV 0.5 5.0 mV 2.0 5.0 mV DSNU2 1.0 5.0 mV Power consumption PW 600 800 mW Output impedance ZO 0.3 0.5 kΩ Average dark signal Note 1 PRNU VOUT = 1 V ADS1 Light shielding ADS2 Dark signal non-uniformity Response Image lag Note 1 DSNU1 Light shielding Red RR 3.9 5.6 7.3 V/lx•s Green RG 3.6 5.1 6.6 V/lx•s Blue RB 4.5 6.4 8.3 V/lx•s 2.0 5.0 % 1.0 5.0 % 5.0 6.0 V Note 1 IL1 VOUT = 1 V IL2 Offset level Note 2 Output fall delay time VOS Note 3 4.0 td VOUT = 1 V 20 Register imbalance RI VOUT = 1 V 0 Total transfer efficiency TTE VOUT = 1 V, 95 ns 4.0 % 98 % Red 630 nm Green 540 nm Blue 460 nm data rate = 40 MHz Response peak Dynamic range Note 1 Reset feed-through noise Random noise Note 1 Note 2 DR11 Vsat/DSNU1 1000 times DR12 Vsat/DSNU2 2000 times DR21 Vsat/σbit1 2000 times DR22 Vsat/σbit2 4000 times RFTN Light shielding σbit1 –500 +200 +500 mV Light shielding, bit clamp – 1.0 – mV σbit2 mode (t7 = 150 ns) – 0.5 – mV σline1 Light shielding, line – 4.0 – mV σline2 clamp mode (t19 = 3 µs) – 2.0 – mV Notes 1. ADS1, DSNU1, IL1, DR11, DR21, σbit1 and σline1 show the specification of VOUT1 and VOUT2. ADS2, DSNU2, IL2, DR12, DR22, σbit2 and σline2 show the specification of VOUT3 to VOUT6. 2. Refer to TIMING CHART 2, 5. 3. When the fall time of φ1L (t2’) is the TYP. value (refer to TIMING CHART 2, 5). DATA SHEET S13878EJ1V0DS00 5 µPD3728 INPUT PIN CAPACITANCE (TA = +25 °C, VOD = 12 V) Parameter Symbol Pin name Pin No. Shift register clock pin capacitance 1 C φ1 Shift register clock pin capacitance 2 C φ2 TYP. MAX. Unit 13 350 500 pF 23 350 500 pF φ10 9 350 500 pF φ2 14 350 500 pF 24 350 500 pF φ20 28 350 500 pF φ1 MIN. Last stage shift register clock pin capacitance C φL φ1L 29 10 pF Reset gate clock pin capacitance CφRB φRB 8 10 pF Reset feed-through level clamp clock pin capacitance CφCLB φCLB 30 10 pF Transfer gate clock pin capacitance CφTG φTG1 22 100 pF φTG2 21 100 pF φTG3 15 100 pF Remark Pins 13, 23 (φ1) and pin 9 (φ10) are connected each other inside of the device. Pins 14, 24 (φ2) and pin 28 (φ20) are connected each other inside of the device. 6 DATA SHEET S13878EJ1V0DS00 TIMING CHART 1 (Bit clamp mode, for each color) φ TG1 to φ TG3 φ 1 (φ 10) φ 2 (φ 20) φ 1L φ CLB 119 121 123 125 127 129 131 120 122 124 126 128 130 132 7435 7437 27 29 28 30 7436 7438 23 25 24 26 7425 7427 7429 7431 7433 21 22 7426 7428 7430 7432 7434 15 17 19 16 18 20 Note 1 3 5 7 9 11 13 Note 2 4 6 8 10 12 14 DATA SHEET S13878EJ1V0DS00 φ RB VOUT1, 3, 5 VOUT2, 4, 6 7 Note Input the φRB and φCLB pulses continuously during this period, too. Valid photocell (7300 pixels) Invalid photocell Invalid photocell (6 pixels) (6 pixels) µPD3728 Optical black (96 pixels) µPD3728 TIMING CHART 2 (Bit clamp mode, for each color) t1 t2 90 % φ 1 (φ 10) 10 % 90 % φ 2 (φ 20) 10 % 90 % φ 1L 10 % t5 φ RB t4 t6 t1' 90 % t2' t3 t10 t8 10 % 90 % φ CLB t9 t11 t7 10 % td VOUT1 to VOUT6 RFTN VOS 10 % Symbol MIN. TYP. t1, t2 0 50 ns t1’, t2’ 0 5 ns t3 20 50 ns t4 5 200 t5, t6 0 20 ns t7 20 150 ns ns t8, t9 8 0 20 t10 –10Note 1 +50 t11 –5Note 2 +50 MAX. DATA SHEET S13878EJ1V0DS00 – – Unit ns ns ns µPD3728 Notes 1. MIN. of t10 shows that the φRB and φCLB overlap each other. 90 % φ RB t10 φ CLB 90 % 2. MIN. of t11 shows that the φ1L and φCLB overlap each other. φ 1L φ CLB 90 % t11 90 % DATA SHEET S13878EJ1V0DS00 9 µPD3728 TIMING CHART 3 (Bit clamp mode, for each color) t13 t12 t14 90 % 10 % φ TG1 to φ TG3 t15 φ 1 (φ 10) t16 90 % φ 2 (φ 20) φ 1L 90 % φ RB t11 90 % φ CLB Note 1 Symbol MIN. TYP. MAX. Unit t11 –5Note 2 +50 ns t12 3000 10000 ns t13, t14 0 50 ns t15, t16 900 1000 ns Notes 1. Input the φRB and φCLB pulses continuously during this period, too. 2. MIN. of t11 shows that the φ1L and φCLB overlap each other. 90 % φ 1L t11 φ CLB φ1 (φ10), φ2 (φ20) cross points φ 1 (φ 10) Remark 10 φ1L, φ2 (φ20) cross points φ 2 (φ 20) 2 V or more φ 2 (φ 20) 90 % 2 V or more 2 V or more 0.5 V or more φ 1L Adjust cross points (φ1 (φ10), φ2 (φ20)) and (φ1L, φ2 (φ20)) with input resistance of each pin. DATA SHEET S13878EJ1V0DS00 TIMING CHART 4 (Line clamp mode, for each color) φ TG1 to φ TG3 φ 1 (φ 10) φ 2 (φ 20) φ 1L φ CLB 21 23 25 27 29 119 121 123 125 127 129 131 22 24 26 28 30 120 122 124 126 128 130 132 7425 7427 7429 7431 7433 7435 7437 15 17 19 16 18 20 Note 1 3 5 7 9 11 13 Note 2 4 6 8 10 12 14 VOUT1, 3, 5 7426 7428 7430 7432 7434 7436 7438 DATA SHEET S13878EJ1V0DS00 φ RB VOUT2, 4, 6 Note Set the φRB to high level during this period. 11 Remark Inverse pulse of the φTG1 to φTG3 can be used as φCLB. Valid photocell (7300 pixels) Invalid photocell (6 pixels) Invalid photocell (6 pixels) µPD3728 Optical black (96 pixels) µPD3728 TIMING CHART 5 (Line clamp mode, for each color) t1 t2 90 % φ 1(φ 10) 10 % 90 % φ 2(φ 20) 10 % 90 % φ 1L 10 % t5 t4 t6 t1' 90 % t2' t3 φ RB 10 % “H” φ CLB td VOUT1 to VOUT6 RFTN VOS 10 % Symbol 12 MIN. TYP. MAX. t1, t2 0 50 ns t1’, t2’ 0 5 ns t3 20 50 ns t4 5 200 t5, t6 0 20 DATA SHEET S13878EJ1V0DS00 – Unit ns ns µPD3728 TIMING CHART 6 (Line clamp mode, for each color) t13 t12 t14 90 % 10 % φ TG1 to φ TG3 t15 t16 90 % φ 1 (φ 10) φ 2 (φ 20) 90 % φ 1L Note φ RB t17 90 % 10 % t20 φ CLB Symbol t21 t19 MIN. TYP. 3000 10000 ns t13, t14 0 50 ns t15, t16 900 1000 ns t17, t18 100 1000 ns t19 200 t12 ns 0 20 ns t12 t20, t21 Note t18 MAX. Unit Set the φRB to high level during this period. Remark Inverse pulse of the φTG1 to φTG3 can be used as φCLB. φ1 (φ10), φ2 (φ20) cross points φ 1 (φ 10) φ 2 (φ 20) 2 V or more φ 2 (φ 20) φ1L, φ2 (φ20) cross points 2 V or more 2 V or more 0.5 V or more φ 1L Remark Adjust cross points (φ1 (φ10), φ2 (φ20)) and (φ1L, φ2 (φ20)) with input resistance of each pin. DATA SHEET S13878EJ1V0DS00 13 µPD3728 DEFINITIONS OF CHARACTERISTIC ITEMS 1. Saturation voltage: Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure: SE Product of intensity of illumination (IX) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity: PRNU The output signal non-uniformity of all the valid pixels when the photosensitive surface is applied with the light of uniform illumination. This is calculated by the following formula. PRNU (%) = ∆x × 100 x ∆x : maximum of xj − x 7300 Σx x= j j=1 7300 xj : Output voltage of valid pixel number j VOUT Register Dark DC level 4. x ∆x Average dark signal: ADS Average output signal voltage of all the valid pixels at light shielding. This is calculated by the following formula. 7300 Σd ADS (mV) = j j=1 7300 dj : Dark signal of valid pixel number j 14 DATA SHEET S13878EJ1V0DS00 µPD3728 5. Dark signal non-uniformity: DSNU Absolute maximum of the difference between ADS and voltage of the highest or lowest output pixel of all the valid pixels at light shielding. This is calculated by the following formula. DSNU (mV) : maximum of dj − ADS j = 1 to 7300 dj : Dark signal of valid pixel number j VOUT ADS Register Dark DC level DSNU 6. Output impedance: ZO Impedance of the output pins viewed from outside. 7. Response: R Output voltage divided by exposure (Ix•s). Note that the response varies with a light source (spectral characteristic). 8. Image lag: IL The rate between the last output voltage and the next one after read out the data of a line. φTG ON Light OFF VOUT V1 VOUT V1 IL (%) = VOUT ×100 DATA SHEET S13878EJ1V0DS00 15 µPD3728 9. Register imbalance: RI The rate of the difference between the averages of the output voltage of Odd and Even pixels, against the average output voltage of all the valid pixels. n 2 2 n ∑ (V2j – 1 – V2j) j= 1 RI (%) = × 100 n 1 n ∑ Vj j= 1 n : Number of valid pixels Vj : Output voltage of each pixel 10. Random noise: σ Random noise σ is defined as the standard deviation of a valid pixel output signal with 100 times (=100 lines) data sampling at dark (light shielding). 100 σ (mV) = Σ (V – V) i 2 i=1 100 , V= 1 100 ΣV i 100 i=1 Vi: A valid pixel output signal among all of the valid pixels for each color VOUT V1 line 1 V2 line 2 … … V100 line 100 This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling). 16 DATA SHEET S13878EJ1V0DS00 µPD3728 STANDARD CHARACTERISTIC CURVES (Nominal) DARK OUTPUT TEMPERATURE CHARACTERISTIC 8 STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC (TA = +25 °C) 2 Relative Output Voltage 2 1 0.5 1 0.2 0.25 0.1 0 10 20 30 40 0.1 50 1 Operating Ambient Temperature TA(°C) 5 10 Storage Time (ms) TOTAL SPECTRAL RESPONSE CHARACTERISTICS (without infrared cut filter) (TA = +25 °C) 100 B 80 R Response Ratio (%) Relative Output Voltage 4 60 G 40 20 G B 0 400 500 600 700 800 Wavelength (nm) DATA SHEET S13878EJ1V0DS00 17 µPD3728 APPLICATION CIRCUIT EXAMPLE +5 V +12 V 10 Ω + B4 10 µ F/16 V 0.1 µ F 1 2 B6 3 4 B5 5 6 7 φ RB VOUT4 VOUT3 GND GND VOUT6 VOUT1 GND GND VOUT5 VOUT2 GND VOD GND 36 34 32 B1 + 0.1 µ F 10 µ F/16 V B2 31 φ CLB 30 47 Ω 47 Ω 2Ω 2Ω φ RB φ 1L 29 9 φ 10 φ 20 28 NC NC NC NC NC NC 12 26 25 13 φ2 24 2Ω 2Ω φ1 14 φ1 23 2Ω 2Ω φ2 15 φ TG1 22 2Ω φ TG2 21 2Ω 17 18 φ TG3 GND NC NC NC NC φ CLB 27 2Ω 16 +5 V 0.1 µ F 47 µ F/25 V 33 8 11 B3 35 47 Ω 10 φ2 + µ PD3728 φ1 φ TG 20 19 Remarks 1. Pin 9 (φ10) and pin 28 (φ20) should be open to decrease the influence of input clock noise to output signal waveform, in case of operating at low or middle speed range; data rate under 24 MHz or so. 2. The inverters shown in the above application circuit example are the 74AC04. 18 DATA SHEET S13878EJ1V0DS00 µPD3728 B1 to B6 EQUIVALENT CIRCUIT +12 V 47 µ F/25 V + 0.1 µ F 4.7 kΩ 110 Ω CCD VOUT 47 Ω 2SC945 2SA1005 1 kΩ DATA SHEET S13878EJ1V0DS00 19 µPD3728 PACKAGE DRAWING CCD LINEAR IMAGE SENSOR 36-PIN CERAMIC DIP (600mil) (Unit : mm) 94.00±0.50 1 14.99±0.3 9.5±0.9 (35.0) 2 The 1st valid pixel 15.24 (4.33) (2.33) 1.27±0.05 0.46±0.05 3 2.54 20.32 2.0±0.3 88.9±0.6 4 0.25±0.05 3.50±0.5 0.97±0.3 3.30±0.35 Name Dimensions Refractive index Glass cap 93.0 × 13.6 × 1.0 1.5 1 The 1st valid pixel 2 The 1st valid pixel 3 The surface of the chip 4 The bottom of the package The center of the pin1 The center of the package (Reference) The top of the glass cap (Reference) The surface of the chip 36D-1CCD-PKG1-1 20 DATA SHEET S13878EJ1V0DS00 µPD3728 NOTES ON THE USE OF THE PACKAGE The application of an excessive load to the package may cause the package to warp or break, or cause chips to come off internally. Particular care should be taken when mounting the package on the circuit board. When mounting the package, use a circuit board which will not subject the package to bending stress, or use a socket. For this product, the reference value for the three-point bending strengthNote is 30 kg. Avoid imposing a load, however, on the inside portion as viewed from the face on which the window (glass) is bonded to the package body (ceramic). Note Three-point bending strength test Distance between supports: 70 mm, Support R: R 2 mm, Loading rate: 0.5 mm / min. Load Load 70 mm 70 mm DATA SHEET S13878EJ1V0DS00 21 µPD3728 [MEMO] 22 DATA SHEET S13878EJ1V0DS00 µPD3728 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. DATA SHEET S13878EJ1V0DS00 23 µPD3728 [MEMO] • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98.8